GS9012
Vishay Semiconductors
formerly General Semiconductor
Document Number 88195
www.vishay.com
10-May-02
1
New Product
Small Signal Transistors (PNP)
Features
PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AF-
driver stages and low power output stages such as
portable radios in class-B push-pull operation.
Complementary to GS9013
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
Maximum Ratings & Thermal Characteristics
Ratings at 25
C ambient temperature unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
500
mA
Power Dissipation at T
amb
= 25
C
P
tot
625
(1)
mW
Thermal Resistance Junction to Ambient Air
R
JA
200
(1)
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
Dimensions in inches and (millimeters)
TO-226AA (TO-92)
GS9012
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88195
2
10-May-02
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current Gain Group D
V
CE
= 1V, I
C
= 50mA
64
--
91
E
78
--
112
DC Current Gain
F
h
FE
96
--
135
--
G
112
--
166
H
144
--
202
V
CE
= 1V, I
C
= 500mA
40
90
--
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
20
--
--
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100A, I
E
= 0
40
--
--
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 100A, I
C
= 0
5
--
--
V
Collector Cut-off Current
I
CBO
V
CB
= 25V, I
E
= 0
--
--
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 3V, I
C
= 0
--
--
100
nA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
--
0.18
0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
--
0.95
1.2
V
Base-Emitter ON Voltage
V
BE(on)
V
CE
= 1V, I
C
= 10mA
0.6
0.67
0.7
V
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