GS9014
Vishay Semiconductors
formerly General Semiconductor
Document Number 88197
www.vishay.com
16-May-02
1
New Product
Small Signal Transistors (NPN)
Features
NPN Silicon Epitaxial Planar Transistors
Complementary to GS9015
Low noise pre-amplifier
High h
FE
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
Maximum Ratings & Thermal Characteristics
Ratings at 25
C ambient temperature unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Power Dissipation at T
amb
= 25
C
P
tot
450
(1)
mW
Thermal Resistance Junction to Ambient Air
R
JA
250
(1)
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
Dimensions in inches and (millimeters)
TO-226AA (TO-92)
GS9014
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88197
2
16-May-02
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current Gain Group A
60
--
150
DC Current Gain
B
h
FE
V
CE
= 5V, I
C
= 1mA
100
--
300
--
C
200
--
600
D
400
--
1000
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
45
--
--
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100A, I
E
= 0
50
--
--
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 100A, I
C
= 0
5
--
--
V
Collector Cut-off Current
I
CBO
V
CB
= 50V, I
E
= 0
--
--
50
nA
Emitter Cut-off Current
I
EBO
V
EB
= 5V, I
C
= 0
--
--
50
nA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 100mA, I
B
= 5mA
--
0.14
0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
= 100mA, I
B
= 5mA
--
0.84
1.0
V
Base-Emitter ON Voltage
V
BE(on)
V
CE
= 5V, I
C
= 2mA
0.58
0.63
0.70
V
Output Capacitance
C
OB
V
CB
= 10V, I
E
= 0,
--
2.2
3.5
pF
= 1 MHz
Gain-Bandwidth Product
T
V
CE
= 5V, I
C
= 10mA
150
270
--
MHz
Noise Figure
NF
V
CE
= 5V, I
C
= 0.2mA,
--
0.9
10
dB
= 1KHz, Rs = 2K
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