MBR735 THRU MBR760
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal to silicon rectifier,
majority carrier conduction
Low power loss, high efficiency
High current capability, low forward
voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
V
RRM
35
45
50
60
Volts
Maximum working peak reverse voltage
V
RWM
35
45
50
60
Volts
Maximum DC blocking voltage
V
DC
35
45
50
60
Volts
Maximum average forward rectified current
(SEE FIG 1)
I
(AV)
7.5
Amps
Peak repetitive forward current (square wave, 20 KH
Z
)
at T
C
=105C
I
FRM
15.0
Amps
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
I
FSM
150.0
Amps
Peak repetitive reverse surge current
(NOTE 1)
I
RRM
1.0
0.5
Amps
Maximum instantaneous
I
F
=7.5A, T
C
=25C
-
0.75
forward voltage at
I
F
=7.5A, T
C
=125C
V
F
0.57
0.65
Volts
(NOTE 2)
I
F
=15A, T
C
=25C
0.84
-
I
F
=15A, T
C
=125C
0.72
-
Maximum instantaneous reverse current at
rated DC blocking voltage
T
C
=25C
I
R
0.1
0.5
mA
(NOTE 1)
T
C
=125C
15.0
50
Voltage rate of change (rated V
R
)
dv/dt
10,000
V/
s
Maximum thermal resistance,
(NOTE 3)
R
JC
3.0
R
JA
60.0
C/W
Operating junction temperature range
T
J
-65 to +150
C
Storage temperature range
T
STG
-65 to +175
C
NOTES:
(1) 2.0
s, pulse width, f=1.0 KH
Z
(2) Pulse test: 300
s pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
4/98
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
1
2
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN
PIN 1
PIN 2
CASE
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
Dimensions in inches and (millimeters)
1
10
100
25
50
75
100
125
150
175
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
1
10
50
0.1
1
10
100
40
100
1,000
4,000
0.01
0.1
1
10
100
0.1
1
10
100
0
50
100
150
0
2
4
6
8
10
0
20
40
60
80
100
0.001
0.01
0.1
1
10
50
FIG. 1 - FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, C
AVERAGE FORWARD CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
NUMBER OF CYCLES AT 60 H
Z
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
REVERSE VOLTAGE, VOLTS
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
J
=75C
T
J
=25C
T
J
=25C
T
J
=125C
PULSE WIDTH = 300
s
T
J
=25C
f=1.0 MHz
Vsig=50mVp-p
RESISTIVE OR INDUCTIVE LOAD
T
J
=125C
MBR735 - MBR745
MBR750 & MBR760
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
t, PULSE DURATION, sec.
TRANSIENT THERMAL IMPEDANCE,
C/W
MBR735 - MBR745
MBR750 & MBR760
MBR735 - MBR745
MBR750 & MBR760
RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR760
MBR735 - MBR745
MBR750 & MBR760
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