P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
Transient Voltage Suppressors
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA
(SMB J-Bend)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Very fast response time
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250
C/10 seconds at terminals.
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 oz., 0.093 g
Packaging Codes Options (Antistatic):
51 2K per Bulk box, 20K/carton
52 750 per 7" plastic Reel (12mm tape), 15K/carton
5B 3.2K per 13" plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak power dissipation with a 10/1000
s waveform
(1)(2)
(Fig. 1)
P
PPM
Minimum 600
W
Peak pulse current with a 10/1000
s waveform
(1)
I
PPM
See Next Table
A
Power dissipation on infinite heatsink, T
A
= 50C
P
M(AV)
5.0
W
Peak forward surge current 8.3ms single half sine-wave
I
FSM
100
A
uni-directional only
(2)
Operating junction and storage temperature range
T
J
, T
STG
65 to +150
C
Thermal resistance junction to ambient air
(3)
R
JA
100
C/W
Thermal resistance junction to leads
R
JL
20
C/W
Operating junction and storage temperature range
T
J
, T
STG
65 to +150
C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25C per Fig. 2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Extended
Voltage Range
V
(BR)
Unidirectional 6.8 to 540V
V
(BR)
Bidirectional 6.8 to 220V
Peak Pulse Power 600W
Document Number 88370
www.vishay.com
13-Nov-02
1
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25C ambient temperature unless otherwise specified. V
F
= 3.5V at I
F
= 50A (uni-directional only)
Breakdown Voltage
Maximum
Maximum
Maximum
Maximum
General
Device Marking
V
(BR)
at I
T
(1)
Test
Stand-off
Reverse
Peak Pulse
Clamping
Temp.
Semiconductor
Code
(V)
Current
Voltage
Leakage
Current
Voltage at
Coefficient
Part Number
I
T
V
WM
at V
WM
I
PPM
(2)
I
PPM
of V
(BR)
UNI
BI
Min
Max
(mA)
(V)
I
D
(3)
(
A)
(A)
V
C
(V)
(%/C)
P6SMB6.8A
6V8A
6V8C
6.45
7.14
10
5.80
1000
57.1
10.5
0.057
P6SMB7.5A
7V5A
7V5C
7.13
7.88
10
6.40
500
53.1
11.3
0.061
P6SMB8.2A
8V2A
8V2C
7.79
8.61
10
7.02
200
49.6
12.1
0.065
P6SMB9.1A
9V1A
9V1C
8.65
9.55
1.0
7.78
50
44.8
13.4
0.068
P6SMB10A
10A
10C
9.50
10.5
1.0
8.55
10
41.4
14.5
0.073
P6SMB11A
11A
11C
10.5
11.6
1.0
9.40
5.0
38.5
15.6
0.075
P6SMB12A
12A
12C
11.4
12.6
1.0
10.2
5.0
35.9
16.7
0.078
P6SMB13A
13A
13C
12.4
13.7
1.0
11.1
5.0
33.0
18.2
0.081
P6SMB15A
15A
15C
14.3
15.8
1.0
12.8
1.0
28.3
21.2
0.084
P6SMB16A
16A
16C
15.2
16.8
1.0
13.6
1.0
26.7
22.5
0.086
P6SMB18A
18A
18C
17.1
18.9
1.0
15.3
1.0
23.8
25.2
0.088
P6SMB20A
20A
20C
19.0
21.0
1.0
17.1
1.0
21.7
27.7
0.090
P6SMB22A
22A
22C
20.9
23.1
1.0
18.8
1.0
19.6
30.6
0.092
P6SMB24A
24A
24C
22.8
25.2
1.0
20.5
1.0
18.1
33.2
0.094
P6SMB27A
27A
27C
25.7
28.4
1.0
23.1
1.0
16.0
37.5
0.096
P6SMB30A
30A
30C
28.5
31.5
1.0
25.6
1.0
14.5
41.4
0.097
P6SMB33A
33A
33C
31.4
34.7
1.0
28.2
1.0
13.1
45.7
0.098
P6SMB36A
36A
36C
34.2
37.8
1.0
30.8
1.0
12.0
49.9
0.099
P6SMB39A
39A
39C
37.1
41.0
1.0
33.3
1.0
11.1
53.9
0.100
P6SMB43A
43A
43C
40.9
45.2
1.0
36.8
1.0
10.1
59.3
0.101
P6SMB47A
47A
47C
44.7
49.4
1.0
40.2
1.0
9.3
64.8
0.101
P6SMB51A
51A
51C
48.5
53.6
1.0
43.6
1.0
8.6
70.1
0.102
P6SMB56A
56A
56C
53.2
58.8
1.0
47.8
1.0
7.8
77.0
0.103
P6SMB62A
62A
62C
58.9
65.1
1.0
53.0
1.0
7.1
85.0
0.104
P6SMB68A
68A
68C
64.6
71.4
1.0
58.1
1.0
6.5
92.0
0.104
P6SMB75A
75A
75C
71.3
78.8
1.0
64.1
1.0
5.8
103
0.105
P6SMB82A
82A
82C
77.9
86.1
1.0
70.1
1.0
5.3
113
0.105
P6SMB91A
91A
91C
86.5
95.5
1.0
77.8
1.0
4.8
125
0.106
P6SMB100A
100A
100C
95.0
105
1.0
85.5
1.0
4.4
137
0.106
P6SMB110A
110A
110C
105
116
1.0
94.0
1.0
3.9
152
0.107
P6SMB120A
120A
120C
114
126
1.0
102
1.0
3.6
165
0.107
P6SMB130A
130A
130C
124
137
1.0
111
1.0
3.4
179
0.107
P6SMB150A
150A
150C
143
158
1.0
128
1.0
2.9
207
0.108
P6SMB160A
160A
160C
152
168
1.0
136
1.0
2.7
219
0.108
P6SMB170A
170A
170C
162
179
1.0
145
1.0
2.6
234
0.108
P6SMB180A
180A
180C
171
189
1.0
154
1.0
2.4
246
0.108
P6SMB200A
200A
200C
190
210
1.0
171
1.0
2.2
274
0.108
P6SMB220A
220A
220C
209
231
1.0
185
1.0
1.8
328
0.108
P6SMB250A
250A
--
237
263
1.0
214
1.0
1.74
344
0.110
P6SMB300A
300A
--
285
315
1.0
256
1.0
1.45
414
0.110
P6SMB350A
350A
--
333
368
1.0
300
1.0
1.24
482
0.110
P6SMB400A
400A
--
380
420
1.0
342
1.0
1.10
548
0.110
P6SMB440A
440A
--
418
462
1.0
376
1.0
1.00
602
0.110
P6SMB480A
480A
--
456
504
1.0
408
1.0
0.91
658
0.110
P6SMB510A
510A
--
485
535
1.0
434
1.0
0.86
698
0.110
P6SMB540A
540A
--
513
567
1.0
459
1.0
0.81
740
0.110
Notes: (1) Pulse test: t
p
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bidirectional types with V
WM
of 10 volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
Document Number 88370
2
13-Nov-02
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
T
A
-- Ambient Temperature (
C)
Fig. 2 Pulse Derating Curve
P
PPM
--
Peak Pulse Power (kW)
Fig. 1 Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s
10
s
t
d
-- Pulse Width (sec.)
100
s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60H
Z
10
200
100
1
10
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I
FSM
--
Peak Forward Surge Current (A)
t
p
-- Pulse Duration (sec)
T
ransient
Thermal Impedance (
C/W)
Fig. 5 Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I
PPM
--
Peak Pulse Current, % I
RSM
Fig. 3 Pulse Waveform
T
J
= 25
C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
tr = 10
sec.
Peak Value
I
PPM
Half Value -- IPP
I
PPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t -- Time (ms)
C
J
--
Junction Capacitance (pF)
Fig. 4 Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
V
WM
-- Reverse Stand-Off Voltage (V)
T
J
= 25
C
f = 1.0MHz
Vsig = 50mVp-p
V
R
,
Measured at
Stand-Off
Voltage, V
WM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Document Number 88370
www.vishay.com
13-Nov-02
3
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