Note:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Features
1N4148
SILICON EPITAXIAL PLANAR DIODE
Silicon Epitaxial Planar Diodes
fast switching diode.
This diode is also available in MiniMELF case with the type
designation LL4148.
DIMENSIONS
DIM
inches
mm
Note
Min.
Max.
Min.
Max.
A
-
0.154
-
3.9
B
-
0.075
-
1.9
C
-
0.020
-
0.52
D
1.083
-
27.50
-
Absolute Maximum Ratings
(T
a
=25 )
1
Symbols
Values
Units
Reverse Voltage
V
R
75
Volts
Peak reverse voltage
V
RM
100
Volts
Rectified current (Average)
Half wave rectification with Resist. Load
at T
amb
=25 and f 50Hz
I
O
150
1)
mA
Surge forward current at t<1s and T
j
=25
I
FSM
500
mA
Power dissipation at T
amb
=25
P
tot
500
1)
mW
Junction Temperature
T
j
200
Storage temperature range
T
S
-65 to +200
Characteristic
s
at T
j
=25
Symbols
Min.
Typ.
Max.
Units
Forward voltage at I
F
=10mA
V
F
-
-
1
Volt
Leakage current
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
j
=150
I
R
I
R
I
R
-
-
-
-
-
-
25
5
50
nA
uA
uA
Reverse breakdown voltage
tested wiht 100uA pulses
V
(BR)R
100
-
-
Volts
Capacitance
at V
F
=V
R
=0
C
tot
-
-
4
F
Voltage rise when switching ON
tested with 50mA forward pulses
t
p
=0.1uS, rise time<30nS, f
p
=5 to 100KHz
V
fr
-
-
2.5
Volts
Reverse recovery time
from I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
t
rr
-
-
4
nS
Thermal resistance
junction to ambient Air
R
thA
-
-
0.35
1)
K/mW
Rectification efficiency
at f=100MHz, V
RF
=2V
V
0.45
-
-
-
Note:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Rectification efficiency measurement circuit
2
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