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Электронный компонент: C4890

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Features
l Wide bandwidth, high gain, flat gain spectrum
l Flat, low group delay characteristics and low noise
l Input/output impedance: 50
l Small size, light weight, low price
l Single power supply operation (+12 V)
Applications
l High frequency amplifier for measurement
l PIN photodiode evaluation
P H O T O D I O D E
PIN photodiode amplifier
Wide bandwidth amplifier (1.5 GHz, 20 dB)
C4890
C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum
of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.
C4890 can also be combined with other types of PIN photodiodes and APDs (avalanche photodiodes) to serve as a high-frequency amplifier for
optical measurements in a wide range of fields including industry and research applications.
s
Absolute maximum ratings
Parameter
Condition
Value
Unit
Supply voltage
+13.5
V
Continuation RF input
+15
dBm
Input voltage
DC
+1.25
V
Operating temperature
0 to +60
C
Storage temperature
-10 to +70
C
s
Electrical characteristics (Ta=25 C, Vcc=12 V, Input/output is terminated with 50 load.)
Parameter
Condition
Min.
Typ.
Max.
Unit
High band
1.0
1.5
-
GHz
Cut-off frequency
(-3 dB)
Low band
-
5
10
MHz
Gain
f=1.0 GHz
18
20
-
dB
Gain deviation within bandwidth
f=10 MHz to 1.0 GHz
-
1.0
-
dB
Group delay time
-
700
-
ps
Input
-
1.1
-
dB
VSWR
Output
f=1.0 GHz
-
1.5
-
dB
1 dB compression point
-
7
-
dBm
Rise time
-
240
-
ps
Noise figure
-
8
-
dB
Current consumption
-
45
-
mA
PIN photodiode amplifier
C4890
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KACC1055E01
Apr. 2001 DN
GAIN (dB)
FREQUENCY (GHz)
0
0.5
1.0
1.5
0
10
20
30
2.0
s
Gain vs. frequency
+12
+12
10 k
0.1
R1
R3
R2
SMA
SMA
Vout
C4890
ATTENUATOR
PHOTODIODE
Damp quantity
(dB)
Resistance value according to the attenuator damp quantity
Damp rate
(%)
R1, R2
(
)
R3
(
)
0
0
0
50
3
30
8.2
150
6
50
16
68
10
70
27
36
KACCB0038EA
30
20
20
11
30
40
7
7
(2 ) SMA JACK
W I D E B A N D A M P L I F I E R
C 4 8 9 0
No.
Vcc=12V
GND
IN MAX 15dBm
WARRANTY REAL
DO NOT REMOVE
OUT
(4 ) M3 (d-5)
s
Application example: High-speed O/E converter module
A high-sensitivity O/E converter can be easily configured by
using C4890 in conjunction with a high-speed PIN photodiode
(S5973, etc). The following is an example when C4890 is used
with S5973 to amplify the output signal after receiving an
attenuator. Major performance items are shown below.
Effective bandwidth: 5 MHz to 1.5 GHz
The lower limit is determined by the amplifier (C4890)
and the upper limit by the photodiode.
Conversion sensitivity (V/W) = 0.5 A/W 50 (100 -
)/100 10 (=850 nm)
Detection limit: 4.4 Wrms (
=850 nm, BW=1.5 GHz)
Depends on the amplifier NF (NF=8 dB Typ.).
The above specifications are typical values and not guaranteed.
C4890 gain
Attenuator damp rate
Attenuator input impedance
Photodiode photoelectric sensitivity
GROUP DELAY TIME (ns)
FREQUENCY (GHz)
0
0.5
1.0
1.5
0
1
2
2.0
s
Group delay time vs. frequency
KACCB0039EA
s
Dimensional outline (unit: mm)
KACCA0034EA
s
Connection example
KPINC0003EB