ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES
Cat. No. LPRD1015E03
Sep. 1999 T
Printed in Japan (1,000)
ULTRAFAST InGaAs
MSM PHOTODETECTORS
G7096 SERIES
FEATURES
Ultrafast response
Large photosensitive area
APPLICATIONS
Optical high speed waveform measurement
Optical communications
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K.
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., International Sales Division
325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: france@hamamatsu.com
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it
Figure 1: Optical Pulse Response
(Including time response of light source, bias-tee and oscilloscope)
Figure 2: Spectral Response
Figure 3: Dimensional Outline (Unit: mm)
Ultrafast Response (tr = 40ps
G7096
)
G7096
G7096-01
G7096-02
The G7096 is an InGaAs MSM (Metal-Semiconductor-Metal)
photodetector that achieves an ultrafast rise times of 40 ps.
The photosensitive area of the MSM photodetector is
composed of symmetrical and interdigital Schottky contacts,
and is relatively larger than other ultra fast photodetectors, thus
facilitating coupling with an optical system. So, the MSM
photodetector is ideal as an ultrafast detector for digital signal
transmission in optical communications.
Additionally, both polarities of the bias voltage are available,
and each polarity of the output pulse can be obtained in
response to the applied bias.
The G7096 series consists of various package styles: a coaxial
metal package* facilitating connecting with an SMA connector
(G7096: The bias-tee is necessary), a general purpose TO-18
package (G7096-01), and a small ceramic package (G7096-
02). Fiber-pigtailed or optical connectorised types are also
available for G7096 and G7096-01.
*Japanese Patent No.2070802
Parameter
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature
Storage Temperature
Symbol
V
Bmax
L
max
Topr
Tstg
Unit
V
mW
mW
ABSOLUTE MAXIMUM RATINGSTa=25
Value
15
10
2
-40 to +85
-40 to +100
**Noise Equivalent Power
Condition
Pulse width
1ns
Pulse width
1ns
Parameter
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G7096
G7096-01
G7096-02
Symbol
p
A
Unit
m
m
mm
2
mm
2
Value
0.85 to 1.65
1.5
0.2
0.2
1
1
TO-5
(Unified with SMA connector)
TO-18
Ceramic
Condition
V
B
=10V
V
B
=10V
General Characteristics (Ta=25)
Radiant sensitivity
Dark Current
NEP**
G4176
G4176-01
G4176-02
Terminal Capacitance
G4176
G4176-01
G4176-02
Rise Time
G4176
G4176-01
G4176-02
Fall Time
G4176
G4176-01
G4176-02
S
I
D
A/W
A
Min.
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
=1.3m
ELECTRICAL AND OPTICAL CHARACTERISTICSTa=25, V
B
=10V
Parameter
Symbol
Condition
Value
Unit
Typ.
0.4
15
2
10
-10
3
10
-10
310
-10
0.7
0.9
1.2
40
80
60
120
160
140
Max.
-
20
-
-
-
0.8
1.0
1.4
60
100
80
160
200
180
Ct
tr
tf
10 to 90%
10 to 90%
=1.3m
W/Hz
1/2
pF
ps
ps
TIME (100 ps/div.)
OUTPUT
WAVELENGTH (
m)
RADIANT SENSITIVITY (A/W)
(BOTTOM VIEW)
SENSITIVE
SURFACE
CASE
CHIP
OUTPUT/BIAS*
1/4-36UNS-2B
9.6
2.0
3.0
7.9
10
8.2
2.3
SENSITIVE
SURFACE
12 MIN.
3.6
1.2
(BOTTOM VIEW)
5.4
4.7
BIAS* (/OUTPUT)
CASE
OUTPUT (/BIAS*)
0.45 LEAD
CHIP
*Both polarities of the bias voltage are available.
4.5
0.4
0.1
0.9
2.54
4.5
1.2
1.9
5.4
0.6
1.5MIN.
OUTPUT/BIAS
*
SENSITIVE
SURFACE
CHIP
G7096-02
G7096-01
G7096
10
0
10
-1
10
-2
10
-3
1.0
0.6
1.8
1.4
1.2
0.8
1.6
(V
B
=10V)
(V
B
=10V)
C
ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES
Cat. No. LPRD1015E03
Sep. 1999 T
Printed in Japan (1,000)
ULTRAFAST InGaAs
MSM PHOTODETECTORS
G7096 SERIES
FEATURES
Ultrafast response
Large photosensitive area
APPLICATIONS
Optical high speed waveform measurement
Optical communications
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K.
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., International Sales Division
325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: france@hamamatsu.com
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it
Figure 1: Optical Pulse Response
(Including time response of light source, bias-tee and oscilloscope)
Figure 2: Spectral Response
Figure 3: Dimensional Outline (Unit: mm)
Ultrafast Response (tr = 40ps
G7096
)
G7096
G7096-01
G7096-02
The G7096 is an InGaAs MSM (Metal-Semiconductor-Metal)
photodetector that achieves an ultrafast rise times of 40 ps.
The photosensitive area of the MSM photodetector is
composed of symmetrical and interdigital Schottky contacts,
and is relatively larger than other ultra fast photodetectors, thus
facilitating coupling with an optical system. So, the MSM
photodetector is ideal as an ultrafast detector for digital signal
transmission in optical communications.
Additionally, both polarities of the bias voltage are available,
and each polarity of the output pulse can be obtained in
response to the applied bias.
The G7096 series consists of various package styles: a coaxial
metal package* facilitating connecting with an SMA connector
(G7096: The bias-tee is necessary), a general purpose TO-18
package (G7096-01), and a small ceramic package (G7096-
02). Fiber-pigtailed or optical connectorised types are also
available for G7096 and G7096-01.
*Japanese Patent No.2070802
Parameter
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature
Storage Temperature
Symbol
V
Bmax
L
max
Topr
Tstg
Unit
V
mW
mW
ABSOLUTE MAXIMUM RATINGSTa=25
Value
15
10
2
-40 to +85
-40 to +100
**Noise Equivalent Power
Condition
Pulse width
1ns
Pulse width
1ns
Parameter
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G7096
G7096-01
G7096-02
Symbol
p
A
Unit
m
m
mm
2
mm
2
Value
0.85 to 1.65
1.5
0.2
0.2
1
1
TO-5
(Unified with SMA connector)
TO-18
Ceramic
Condition
V
B
=10V
V
B
=10V
General Characteristics (Ta=25)
Radiant sensitivity
Dark Current
NEP**
G4176
G4176-01
G4176-02
Terminal Capacitance
G4176
G4176-01
G4176-02
Rise Time
G4176
G4176-01
G4176-02
Fall Time
G4176
G4176-01
G4176-02
S
I
D
A/W
A
Min.
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
=1.3m
ELECTRICAL AND OPTICAL CHARACTERISTICSTa=25, V
B
=10V
Parameter
Symbol
Condition
Value
Unit
Typ.
0.4
15
2
10
-10
3
10
-10
310
-10
0.7
0.9
1.2
40
80
60
120
160
140
Max.
-
20
-
-
-
0.8
1.0
1.4
60
100
80
160
200
180
Ct
tr
tf
10 to 90%
10 to 90%
=1.3m
W/Hz
1/2
pF
ps
ps
TIME (100 ps/div.)
OUTPUT
WAVELENGTH (
m)
RADIANT SENSITIVITY (A/W)
(BOTTOM VIEW)
SENSITIVE
SURFACE
CASE
CHIP
OUTPUT/BIAS*
1/4-36UNS-2B
9.6
2.0
3.0
7.9
10
8.2
2.3
SENSITIVE
SURFACE
12 MIN.
3.6
1.2
(BOTTOM VIEW)
5.4
4.7
BIAS* (/OUTPUT)
CASE
OUTPUT (/BIAS*)
0.45 LEAD
CHIP
*Both polarities of the bias voltage are available.
4.5
0.4
0.1
0.9
2.54
4.5
1.2
1.9
5.4
0.6
1.5MIN.
OUTPUT/BIAS
*
SENSITIVE
SURFACE
CHIP
G7096-02
G7096-01
G7096
10
0
10
-1
10
-2
10
-3
1.0
0.6
1.8
1.4
1.2
0.8
1.6
(V
B
=10V)
(V
B
=10V)
C
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