G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These
linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,
a CDS circuit, an offset compensation circuit, a shift register and a timing generator. These sensors deliver high sensitivity and stable operation in
the near infrared spectral range. The package is hermetically sealed for high reliability and the window has an anti-reflective coating for efficient
light detection.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by supplying an external voltage. The
image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
l
Wide dynamic range
l
Low noise and low dark current
l
Selectable gain
l
Anti-saturation circuit
l
CDS circuit *
1
l
Offset compensation circuit
l
Simple operation (by built-in timing generator) *
2
l
High resolution: 25 m pitch (512 ch)
l
Low cross-talk
l
256 ch: 1 video line
512 ch: 2 video lines
Applications
l
DWDM wavelength monitor
l
Optical spectrum analyzer
I M A G E S E N S O R
InGaAs linear image sensor
Image sensor for DWDM wavelength monitor
G8050 to G8053 series
s S election gu ide
Typ e N o .
C o o lin g
N u m b e r o f
p ixe ls
P ixe l p itc h
( m )
P ixe l s ize
[ m (H ) m (V )]
S p e c tra l re s p o n se ra n g e
( m )
D e fe c tive
p ixe l
G 8 0 5 0- 2 5 6 R
N o n -c o o le d
0 .9 to 1 .7 (2 5 C )
G 8 0 5 0- 2 5 6 S
O n e -s ta g e T E -c o o le d
2 5 6
5 0
5 0 2 5 0
0 .9 to 1 .6 7 (-1 0 C )
G 8 0 5 1- 5 1 2 R
N o n -c o o le d
0 .9 to 1 .7 (2 5 C )
G 8 0 5 1- 5 1 2 S
O n e -s ta g e T E -c o o le d
5 1 2
2 5
2 5 2 5 0
0 .9 to 1 .6 7 (-1 0 C )
G 8 0 5 2- 2 5 6 D *
3
G 8 0 5 2- 2 5 6 R
N o n -c o o le d
0 .9 to 1 .7 (2 5 C )
G 8 0 5 2- 2 5 6 S
O n e -s ta g e T E -c o o le d
2 5 6
5 0
5 0 5 0 0
0 .9 to 1 .6 7 (-1 0 C )
G 8 0 5 3- 5 1 2 D *
3
G 8 0 5 3- 5 1 2 R
N o n -c o o le d
0 .9 to 1 .7 (2 5 C )
G 8 0 5 3- 5 1 2 S
O n e -s ta g e T E -c o o le d
5 1 2
2 5
2 5 5 0 0
0 .9 to 1 .6 7 (-1 0 C )
0
0.5
1.0
1.5
2.0
0
0.5
1.0
WAVELENGTH (m)
PHOTO SENSITIVITY
(A/W)
(Typ.)
T=25 C
T= -10 C
s
Spectral response
KMIRB0011EA
*1: CDS (Correlated Double Sampling) circuit
A major source of noise in charge amplifiers is the reset noise gen-
erated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after re-
set to find the
noise differential
.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conventional image sensor operation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G8050 to G8053 series image sensors internally
generate all timing signals on the CMOS chip just by supplying CLK
and RESET pulses. This makes it simple to set the timings.
*3: For G8052-256D and G8053-512D specifications, see the separate
data sheets available from Hamamatsu.
1
InGaAs linear image sensor
G8050 to G8053 series
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Clock pulse voltage
V
5.5
V
Operating temperature *
1
Topr
-40 to +70
C
Storage temperature *
1
Tstg
-40 to +85
C
*1: Non condensation
s Electrical characteristics (Ta=25 C, V
=5 V )
Parameter
Symbol
Min.
Typ.
Max.
Unit
Vdd
4.9
5.0
5.1
Supply voltage
Vref
-
1.26
-
V
Ground
Vss
-
0
-
V
Element bias
INP
3.5
4.5
4.6
V
Clock frequency
f
0.1
-
4
MHz
high
V
- 0.5
V
V
+ 0.5
V
Clock pulse voltage
low
V
0
0
0.4
V
tr
Clock pulse rise/fall times
tf
0
20
100
ns
Clock pulse width
tpw
200
-
-
ns
high
V
- 0.5
V
V
+ 0.5
V
Reset pulse voltage
low
V (RES)
0
0
0.4
V
tr (RES)
Reset pulse rise/fall times
tf (RES)
0
20
100
ns
Reset pulse width
tpw (RES)
6000
-
-
ns
high
V
H
-
4.4
INP
Video output voltage
low
V
L
Vref
1.26
-
V
Data rate
f
V
-
f/8
-
Hz
s Electrical and optical characteristics
General ratings (T=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Peak sensitivity wavelength
p
-
1.55
-
m
Saturation charge
*2
Qsat
-
30
-
pC
Photo response non-uniformity
*3
PRNU
-
-
5
%
*2: V
=5 V, Cf=10 pF
*3: 50 % of saturation, 10 ms integration time, after dark output subtraction, excluding first and last pixels.
Dark current characteristics (T=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
G8050 series
-
2
20
G8051 series
-
1.5
15
G8052 series
-
4
40
G8053 series
I
D
-
6
60
pA
2
InGaAs linear image sensor
G8050 to G8053 series
1.0 0.2
1 2
14
28
15
10.2 0.15
3.0 0.15
25.4 0.15
22.9 0.15
63.5 0.15
53.3 0.15
38.1 0.15
35.6 0.15
20.3 0.15
A
B
(28 ) 2.54
(28 ) 0.46
6.4 1
27.2 0.15
INDEX MARK
NON-COOLED
ONE-STAGE TE-COOLED
4.35
1.8
A
B
6.15
3.6
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KMIR1009E04
Feb. 2002 DN
Terminal name
Input/Output
Function and recommended connection
CLK
Input
(CMOS logic compatible)
Clock pulse for operating the CMOS shift register
RESET
Input
(CMOS logic compatible)
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. The width of the reset pulse is integration time.
Vdd
Input
Supply voltage for operating the signal processing circuit on the CMOS chip.
Vss
-
Ground for the signal processing circuit on the CMOS chip.
INP
Input
Reset voltage for the charge amplifier array on the CMOS chip.
Cf SELECT
Input
Voltage that determines the feedback capacitance (Cf) on the CMOS chip.
Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V.
CASE
-
This terminal is electrically connected to the package.
THERM
-
Thermistor for monitoring temperature inside the package. No connection for
room temperature operation type.
TE+, TE-
-
Power supply terminal for the thermoelectric cooler that cools the photodiode array.
No connection for room temperature operation type.
AD-TRIG
Output
Digital signal for AD conversion; positive polarity
VIDEO
Output
Analog video signal; positive polarity
Vref
Input
Reset voltage for the offset compensation circuit on the CMOS chip
s
Dimensional outline (unit: mm)
KMIRA0010EA
KMIRC0013EA
s
Pin connection (top view)
TE +
THERM
THERM
CASE
RESET
TE -
Vdd
Vss
INP
CLK
Vref
VIDEO
Cf SELECT
AD-TRIG
256 PIXELS
512 PIXELS
TE +
THERM
THERM
CASE
RESET-ODD
TE -
Vdd
Vss
INP
CLK-ODD
Vref
VIDEO-ODD
Cf SELECT
AD-TRIG-ODD
RESET-EVEN
AD-TRIG-EVEN
CLK-EVEN
VIDEO-EVEN
4
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