I M A G E S E N S O R
PRELIMINARY DATA
Jan. 2001
G8160 to G8163/G8180 series
G8160 to G8163/G8180 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These
linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing
generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode
array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral
range. The package is hermetically sealed for high reliability.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by using an external voltage input.
The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
InGaAs linear image sensor
Near infrared image sensors (0.9 to 1.67 m / 0.9 to 2.55 m)
Features
l
Wide dynamic range
l
Low noise and low dark current
l
Selectable gain
l
Anti-saturation circuit
l
CDS circuit *
1
l
Offset compensation circuit
l
Simple operation (by built-in timing generator) *
2
l
High resolution: 25 m pitch (512 ch)
l
Low cross-talk
l
256 ch: 1 video line
512 ch: 2 video lines
Applications
l
Near infrared multichannel spectrophotometry
l
Radiation thermometry
l
Non-destructive inspection
Related products
l
InGaAs multichannel detector head C8061/C8062
l
Multichannel detector head controller C7557
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
WAVELENGTH (m)
PHOTO SENSITIVITY
(A/W)
(Typ.)
T=25 C
T= -10 C (G8180-256W: T= -20 C)
G8160 TO
G8163 SERIES
G8180-256W
s
Spectral response
KMIRB0010EA
*1: CDS (Correlated Double Sampling) circuit
A major source of noise in charge amplifiers is the reset noise gen-
erated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after re-
set to find the
noise differential
.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conventional image sensor operation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G8160 to G8163/G8180 series image sensors
internally generate all timing signals on the CMOS chip just by sup-
plying CLK and RESET pulses. This makes it simple to set the tim-
ings.
s Selection guide
Type No.
Cooling
Number. of
pixels
Pixel pitch
(m)
Pixel size
[m (H) m (V)]
Spectral
response range
(m)
Defective
pixel
G8160-256S
256
50
50 250
G8161-512S
512
25
25 250
G8162-256S
256
50
50 500
G8163-512S
One-stage
TE-cooled
512
25
25 500
0.9 to 1.67
2 % Max.
G8180-256W
Two-stage
TE-cooled
256
50
50 250
0.9 to 2.55
5 % Max.
InGaAs linear image sensor
G8160 to G8163/G8180 series
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Clock pulse voltage
V
5.5
V
Operating temperature *
1
Topr
0 to +70
C
Storage temperature *
1
Tstg
-40 to +70
C
*1: Non condensation
s Electrical characteristics (Ta=25 C, V
=5 V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Vdd
4.5
5.0
5.5
Supply voltage
Vref
-
1.26
-
V
Ground
Vss
-
0
-
V
Element bias
INP
3.5
4.5
4.6
V
Clock frequency
f
0.1
-
4
MHz
high
V
- 0.5
V
V
+ 0.5
V
Clock pulse voltage
low
V
0
0
0.4
V
tr
Clock pulse rise/fall times
tf
0
20
100
ns
Clock pulse width
tpw
200
-
-
ns
high
V
- 0.5
V
V
+ 0.5
V
Reset pulse voltage
low
V (RES)
0
0
0.4
V
tr (RES)
Reset pulse rise/fall times
tf (RES)
0
20
100
ns
Reset pulse width
tpw (RES)
6000
-
-
ns
high
V
H
-
4.4
-
Video output voltage
low
V
L
0
1.26
-
V
Data rate
f
V
-
f/8
-
Hz
s Electrical and optical characteristics
General ratings (T=25 C)
G8160 to G8163 series
G8180-256W
Parameter
Symbol
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Peak sensitivity wavelength
p
-
1.55
-
-
2.3
-
m
Saturation charge
*2
Qsat
-
30
-
-
30
-
pC
PRNU
*3
PRNU
-
-
5
*3
-
-
10
*4
%
*2: V
=5 V, Cf=10 pF
*3: 50 % of saturation, 10 ms integration time, after dark output subtraction, excluding first and last pixels.
*4: 50 % of saturation, 3 ms integration time, after dark output subtraction, excluding first and last pixels.
Dark current characteristics (T=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
G8160-256S
-
2
8
G8161-512S
-
1.5
6
G8162-256S
-
4
16
G8163-512S
4
16
G8180-256W
*5
I
D
-
1000
4000
pA
*5: T
D
= -25 C
InGaAs linear image sensor
G8160 to G8163/G8180 series
1.0 0.2
1 2
14
28
15
10.2 0.15
3.0 0.15
25.4 0.15
22.9 0.15
63.5 0.15
53.3 0.15
38.1 0.15
35.6 0.15
20.3 0.15
A
B
(28 ) 2.54
(28 ) 0.46
6.4 1
27.2 0.15
INDEX MARK
ONE-STAGE TE-COOLED
TWO-STAGE TE-COOLED
6.15
3.6
A
B
7.25
4.5
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KMIR1007E04
Jan. 2001 DN
s
Dimensional outline (unit: mm)
KMIRA0011EA
KMIRC0013EA
s
Pin connection (top view)
TE +
THERM
THERM
CASE
RESET
TE -
Vdd
Vss
INP
CLK
Vref
VIDEO
Cf SELECT
AD-TRIG
256 PIXELS
512 PIXELS
TE +
THERM
THERM
CASE
RESET-ODD
TE -
Vdd
Vss
INP
CLK-ODD
Vref
VIDEO-ODD
Cf SELECT
AD-TRIG-ODD
RESET-EVEN
AD-TRIG-EVEN
CLK-EVEN
VIDEO-EVEN
Terminal name
Input/Output
Function and recommended connection
CLK
Input
(CMOS logic compatible)
Clock pulse for operating the CMOS shift register
RESET
Input
(CMOS logic compatible)
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. The width of the reset pulse is integration time.
Vdd
Input
Supply voltage for operating the signal processing circuit on the CMOS chip.
Vss
-
Ground for the signal processing circuit on the CMOS chip.
INP
Input
Reset voltage for the charge amplifier array on the CMOS chip.
Cf SELECT
Input
Voltage that determines the feedback capacitance (Cf) on the CMOS chip.
Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V.
CASE
-
This terminal is electrically connected to the package.
THERM
-
Thermistor for monitoring temperature inside the package. No connection for
room temperature operation type.
TE+, TE-
-
Power supply terminal for the thermoelectric cooler that cools the photodiode
array. No connection for room temperature operation type.
AD-TRIG
Output
Digital signal for AD conversion; positive polarity
VIDEO
Output
Analog video signal; positive polarity
Vref
Input
Reset voltage for the offset compensation circuit at the CMOS chip
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