Features
l High-speed response at low reverse voltage
G8198-01: 3 GHz (V
R
=2 V)
G8198-02: 2 GHz (V
R
=2 V)
l Low noise, low dark current
l Low terminal capacitance
l Small package
Applications
l Optical fiber communications
l Fiber channel
l Gigabit Ethernet
P H O T O D I O D E
InGaAs PIN photodiode
High-speed response at low reverse voltage
G8198 series
s
Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
4
Max.
20
V
Operating temperature
Topr
-40 to +85
C
Storage temperature
Tstg
-55 to +125
C
s
Specifications (Ta=25 C)
G8198-01
G8198-02
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Active area
-
-
f0.04
-
-
f0.08
-
mm
Spectral response range
l
-
0.9 to 1.7
-
-
0.9 to 1.7
-
m
Peak sensitivity
wavelength
lp
-
1.55
-
-
1.55
-
m
l=1.3 m
0.8
0.9
-
0.8
0.9
-
Photo sensitivity
S
l=1.55 m
0.85
0.95
-
0.85
0.95
-
A/W
Dark current
I
,
V
4
=5 V
-
0.06
0.3
-
0.08
0.4
nA
Cut-off frequency
fc
V
R
=2 V, R
L
=50 9
l=1.3 m
-
3
-
-
2
-
GHz
Terminal capacitance
Ct
V
4
=2 V
f=1 MHz
-
0.6
-
-
0.9
-
pF
1
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
InGaAs PIN photodiode
G8198 series
WINDOW
1 MIN.
3.5 0.1
0.38 MAX.
4.2 0.1
0.3
LEAD
1.65
PHOTOSENSITIVE
SURFACE
ANTI-REFLECTION COATING
WINDOW
l=1.55 m
2.7
0.2
7.62 MAX.
CASE
1.6
0.15
0.7
0.2
KIRDA0097EA
s Dimensional outline (unit: mm)
s Spectral response
0
1.2
1.0
0.8
0.6
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(Typ. Ta=25 C)
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
s Dark current vs. reverse voltage
1 pA
1 nA
100 pA
10 pA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
DARK CURRENT
G8198-02
G8198-01
s Terminal capacitance vs. reverse voltage
100 fF
10 pF
1 pF
0.01
0.1
1
10
100
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
G8198-02
G8198-01
s Frequency response
-5
10 MHz
100 MHz
1 GHz
10 GHz
FREQUENCY
RELATIVE OUTPUT (dB)
-10
-20
-15
0
5
(Typ. Ta=25 C,
=1.3 m, R
L
=50
, V
R
=2 V)
10
G8198-02
G8198-01
s Eye diagram (photodiode output)
2.48832 Gbps
Pin= -3 dBm
V
R
=2.0 V
100 ps/div.
KIRDB0160EA
KIRDB0161EA
KIRDB0162EA
KIRDB0163EA
Cat. No. KIRD1028E02
Jan. 2001 DN
2
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