Features
l High UV sensitivity: QE 75 % (=200 nm)
l Half pitch 78-lead DIP
l Element size: 3.175 0.3175 mm
l Entire active area: 3.175 25.6875 mm
l Element pitch: 0.3425 mm
Applications
l Spectrophotometers
P H O T O D I O D E
76-element Si photodiode array
High UV sensitivity photodiode array mounted in DIP
S3954
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.
5
V
Operating temperature
Topr
-20 to +60
C
Storage temperature
Tstg
-20 to +80
C
s
Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
-
190 to 1100
-
nm
Peak sensitivity wavelength
p
-
960
-
nm
=200 nm
-
0.10
-
=633 nm
-
0.43
-
Photo sensitivity
S
=p
-
0.58
-
A/W
Dark current
I
D
per 1 element
V
R
=10 mV
-
0.1
30
pA
Temperature coefficient of
dark current
T
CID
-
1.12
-
times/C
Rise time
tr
V
R
=0 V, R
L
=1 k
=655 nm
-
0.4
-
s
Terminal capacitance
Ct
per 1 element
V
R
=0 V, f=10 kHz
-
150
-
pF
Noise equivalent power
NEP
V
R
=10 mV, =p
-
2 10
-15
-
W/Hz
1/2
76-element Si photodiode array
S3954
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
3.175
0.3175
0.025
0.025
0
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
190
400
600
800
1000
1200
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
(Typ. Ta=25 C)
QE=100 %
QE=50 %
10 fA
REVERSE VOLTAGE (V)
DARK CURRENT
0.01
0.1
1
10
100 fA
1 pA
10 pA
100 pA
(Typ. Ta=25 C)
10 pF
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
0.01
0.1
1
10
100 pF
1 nF
(Typ. Ta=25 C)
P 1.27 38 = 48.26
CH 1
3.175
ACTIVE AREA
25.6875
50.8 0.6
15.5 0.3
40
41
77
2
1
39
38
2.8 0.3
1.27
0.46
CH 76
78
(4.5)
15.11 0.25
PIN No.
15.24 0.25*
1.48 0.2
0.25
PHOTOSENSITIVE
SURFACE
Cat. No. KMPD1041E01
Apr. 2001 DN
s
Terminal capacitance vs. reverse voltage
s
Spectral response
KMPDB0130EA
KMPDB0131EA
s
Dark current vs. reverse voltage
KMPDB0132EA
s
Dimensional outline (unit: mm)
KMPDA0115EA
s
Details of elements (unit: mm)
KMPDA0116EA
s
Pin connection
Pin No. Element No.
Pin No. Element No.
1
KC
40
KC
2
2
41
75
3
4
42
73
4
6
43
71
5
8
44
69
6
10
45
67
7
12
46
65
8
14
47
63
9
16
48
61
10
18
49
59
11
20
50
57
12
22
51
55
13
24
52
53
14
26
53
51
15
28
54
49
16
30
55
47
17
32
56
45
18
34
57
43
19
36
58
41
20
38
59
39
21
40
60
37
22
42
61
35
23
44
62
33
24
46
63
31
25
48
64
29
26
50
65
27
27
52
66
25
28
54
67
23
29
56
68
21
30
58
69
19
31
60
70
17
32
62
71
15
33
64
72
13
34
66
73
11
35
68
74
9
36
70
75
7
37
72
76
5
38
74
77
3
39
76
78
1
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