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Электронный компонент: S5821

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S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series
provides high performance and reliability at a low cost.
Features
l High-speed response
l Wide spectral response
l Low dark current
l Low terminal capacitance
Applications
l Optical switch
l Automobile optical sensor
l General photometry
P H O T O D I O D E
Si PIN photodiode
High performance, high reliability Si PIN photodiodes
S5821 series
I General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
V
4
Max.
Power
dissipation
P
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
(V)
(mW)
(C)
(C)
S5821
/K
S5821-01
/L
S5821-02
/K
S5821-03
/L
TO-18
f1.2
1.1
20
50
-40 to +100 -55 to +125
I Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
l
Peak
sensitivity
wavelength
lp
Short
circuit
current
Isc
100 lx
Dark
current
I
,
V
4
=10 V
(nA)
Temp.
coefficient
of I
,
T
+1,
Cut-off
frequency
fc
V
4
=10 V
Terminal
capacitance
Ct
V
4
=10 V
f=1 MHz
NEP
V
4
=10 V
Type No.
(nm)
(nm)
lp 660 nm 780 nm 830 nm
(A) Typ. Max. (times/C) (MHz)
(pF)
(W/Hz
1/2
)
S5821
1.1
S5821-01
12
S5821-02
1.1
S5821-03
320 to 1100 960
0.6 0.45 0.52 0.55
12
0.05
2
1.15
25
3
6.7 10
-15
* Window material K: borosilicate glass, L: lens type borosilicate glass
1
Si PIN photodiode
S5821 series
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
20
10
0
10
20
90
80
70
60
50
30
40
80 %
100 %
20%
40 %
60 %
S5821-01
S5821-03
S5821
S5821-02
(Typ. Ta=25 C)
0
0.1
0.2
0.3
0.4
0.7
200
400
600
(Typ. Ta=25
C
)
800
1000
0.5
0.6
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
I Spectral response
I Directivity
KPINB0151EA
0
TEMPERATURE COEFFICIENT (%/

C)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
KPINB0152EA
FREQUENCY
RELATIVE OUTPUT (dB)
-20
1 MHz
100 kHz
10 MHz
100 MHz
1 GHz
-10
-3
0
+10
(Typ. Ta=25 C,
=830 nm, R
L
=50
, V
R
=10 V)
I Photo sensitivity temperature characteristic
I Frequency response
KPINB0153EA
KPINB0091EA
2
Si PIN photodiode
S5821 series
10 MHz
1 MHz
100 MHz
1 GHz
1
10
100
(Typ. Ta=25 C,
=830 nm,
R
L
=50
)
REVERSE VOLTAGE (V)
CUT-OFF FREQUENCY
KPINB0154EA
1 pA
1 nA
10 pA
100 pA
0.1
1
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
10
100
I Cut-off frequency vs. reverse voltage
I Dark current vs. reverse voltage
KPINB0155EA
1 pF
10 pF
100 pF
0.1
1
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
10
100
KPINB0156EA
I Terminal capacitance vs. reverse voltage
3
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Si PIN photodiode
S5821 series
Cat. No. KPIN1010E02
Oct. 2002 DN
8.5
2.8
3.6 0.2
4.7 0.1
5.4 0.2
2.54 0.2
CONNECTED TO CASE
WINDOW
3.0 0.2
0.45
LEAD
KPINA0074EB
14
4.5 0.2
2.15 0.3
0.45
LEAD
4.65 0.1
5.4 0.2
2.54 0.2
2.3
CONNECTED TO CASE
KPINA0075EA
2.54 0.2
13
2.8
3.6 0.2
0.45
LEAD
4.7 0.1
5.4 0.2
CASE
PHOTOSENSITIVE
SURFACE
WINDOW
3.0 0.2
KPINA0022EB
CASE
2.54 0.2
13
4.5 0.2
2.15 0.3
0.45
LEAD
4.65 0.1
5.4 0.2
2.8
KPINA0046EA
I Dimensional outline (unit: mm)
S5821
S5821-01
S5821-02
S5821-03
4