P H O T O D I O D E
Si PIN photodiode
3 mm lens plastic package
S7797, S5052, S8255, S5573
Features
l Clear plastic package with 3 mm lens
l High-speed response
S7797: 500 MHz Typ. (V
R
=2.5 V)
S5052: 500 MHz Typ. (V
R
=5 V)
S8255: 200 MHz Typ. (V
R
=5 V)
S5573: 80 MHz Typ. (V
R
=5 V)
Applications
l Laser diode monitor in optical disk drive (high-speed APC)
l Spatial light transmission
These Si PIN photodiodes are molded into to a clear plastic package with a
3 mm lens. To meet your application, various types are
available with different time response characteristics.
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
V
R
Max.
Power
dissipation
P
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
(mm)
(mm)
(mm
2
)
(V)
(mW)
(C)
(C)
S7797
S5052
S8255
S5573
Plastic package
with lens
3.0
7.0
20
50
-25 to +85
-40 to +100
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short
circuit
current
Isc
100 lx
2856 K
Dark current
I
D
(nA)
Temp.
coefficient
of I
D
T
CID
Cut-off
frequency
fc
R
L
=50
-3dB
Terminal
capacitance
Ct
f=1 MHz
NEP
Type No.
(nm)
(nm)
p 660
nm
780
nm
830
nm
(A)
Typ.
Max. (times/C) (MHz)
(pF)
(W/Hz
1/2
)
S7797
760 0.52 0.48 0.51 0.48
0.01 *
1
0.3 *
1
500 *
1
6 *
1
3.4 10
-15
*
1
S5052
320 to 1000 800 0.46 0.4 0.45 0.45 2.8 0.02 *
2
0.3 *
2
500 *
2
4 *
2
5.5 10
-15
*
2
S8255
4.0
0.01 *
2
1 *
2
200 *
2
3.4 10
-15
*
2
S5573
320 to 1060 900 0.53 0.4 0.48 0.5
4.5 0.025 *
2
1 *
2
1.15
80 *
2
3 *
2
5.3 10
-15
*
2
*1: V
R
=2.5 V
*2: V
R
=5 V
Si PIN photodiode
S7797, S5052, S8255, S5573
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KPIN1047E01
Apr. 2001 DN
Chip position accuracy with respect to the
package dimension marked *
X, Y
0.2
2
6
8
4.2 MAX.
(INCLUDING BURR)
3.8 *
3.0
5.2 MAX.
(INCLUDING BURR)
1.9
2.9
(
1.3
)
(
0.8)
4.8 *
9.2 1.0
1.2
0.45
2.54
0.45
8
6
0.7
2.2 0.15
4.0 0.2
R1.5
LENS CENTER
0
0.1
0.2
0.3
0.4
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 C)
0.5
0.6
S5052
S7797
S5573, S8255
s Spectral response
s
Dark current vs. reverse voltage
KPINB0176EA
100 fA
1 pA
10 pA
100 pA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. T
a
=25 C)
S5573
S5052
S8255
S7797
KPINB0177EA
1 pA
10 pA
100 pA
1 nA
10 nA
-20
0
20
40
60
AMBIENT TEMPERATURE (C)
DARK CURRENT
(Typ.)
80
100 nA
S5573 (V
R
=5 V)
S5052 (V
R
=5 V)
S8255 (V
R
=5 V)
S7797 (V
R
=2.5 V)
s Dark current vs. ambient temperature
s Terminal capacitance vs. reverse voltage
1 pF
10 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
S8255
S5573
S5052
S7797
(Typ. Ta=25 C, f=1 MHz)
90
80
70
60
50
30
RELATIVE SENSITIVITY
40
20
10
0
10
20
90
80
70
60
50
30
40
80 %
20 %
40 %
60 %
(Typ. Ta=25 C)
100 %
S5573
S8255
S5052
S7797
s Directivity
KPINB0178EA
KPINB0179EA
KPINB0180EA
KPINA0032EA
s Dimensional outline
(unit: mm, tolerance unless otherwise noted: 0.1)
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