Features
Applications
P H O T O D I O D E
Si APD
Short wavelength type APD
S8664 series
PRELIMINARY DATA
Oct. 2002
l High sensitivity at visible range
l Low noise
l High gain
l Low capacitance
l Low-light-level measurement
l Analytical equipment
1
General ratings / Absolute maximum ratings
Absolute maximum ratings
Effective *
active area size
Effective active
area
Type No.
Dimensional
outline
/Window
material *
Package
(mm)
(mm
)
Operating
temperature
Topr
(C)
Storage
temperature
Tstg
(C)
S8664-02K
f0.2
0.03
S8664-05K
f0.5
0.19
S8664-10K
f1.0
0.78
S8664-20K
/K
TO-5
f2.0
3.14
S8664-30K
f3.0
7.0
S8664-50K
/K
TO-8
f5.0
19.6
-55 to +100
S8664-55
/E
Ceramic
5 5
25
-20 to +60
-20 to +80
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Spectral
response
range
l
Peak *
!
sensitivity
wavelength
lp
Photo
sensitivity
S
M=1
l=420 nm
Quantum
efficiency
QE
M=1
l=420 nm
Breakdown
voltage
V
*4
I
,
=100 A
Temperature
coefficient of
V
*4
Dark *
!
current
I
,
Cut-off
frequency
fc
Terminal *
!
capacitance
Ct
Excess *
!
Noise
index
l=420 nm
Gain
M
l=420 nm
Type No.
(nm)
(nm)
(A/W)
(%)
Typ.
(V)
Max.
(V)
(V/C)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
S8664-02K
0.1
1
700
0.8
S8664-05K
0.2
1.5
680
1.6
S8664-10K
0.3
3
530
4
S8664-20K
0.6
6
280
11
S8664-30K
1
15
140
22
S8664-50K
3
35
60
55
S8664-55
320 to
1000
600
0.24
70
400
500
0.78
5
50
40
80
0.2
50
*1: K: Borosilicate glass E: Epoxy resin
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
Si APD
S8664 series
2
I Spectral response
I Quantum efficiency vs. wavelength
I Dark current vs. reverse voltage
I Gain vs. reverse voltage
KAPDB0073EA
KAPDB0074EA
KAPDB0075EA
KAPDB0076EB
10
25
20
15
0
5
PHOTO SENSITIVITY (A/W)
(Typ. M=50)
WAVELENGTH (nm)
200
400
600
800
1000
1200
S8664-02K/-05K/-10K/
-20K/-30K/-50K
S8664-55
40
100
80
60
0
20
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
200
400
600
800
1000
1200
(Typ. Ta=25 C)
S8664-02K/-05K/-10K/
-20K/-30K/-50K
S8664-55
1 nA
1 A
(Typ. Ta=25 C)
100 nA
1 pA
10 pA
10 nA
100 pA
DARK CURRENT
REVERSE VOLTAGE (V)
100
200
300
400
500
S8664-50K
S8664-30K
S8664-10K
S8664-02K
S8664-55
1000
(Typ.
=420 nm)
1
100
10
GAIN
REVERSE VOLTAGE (V)
200
300
400
500
-20 C
0 C
20 C
40 C
60 C
I Terminal capacitance vs. reverse voltage
KAPDB0077EA
10 nF
(Typ. Ta=25 C, f=10 kHz)
1 nF
100 fF
100 pF
10 pF
1 pF
TERMINAL CAPACITANCE
REVERSE VOLTAGE (V)
0
100
200
300
400
500
S8664-30K
S8664-55
S8664-10K
S8664-02K
S8664-50K
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KAPD1012E02
Oct. 2002 DN
Si APD
S8664 series
KAPDA0026EA
I Dimensional outlines (unit: mm)
KAPDA0027EA
S8664-02K/-05K/-10K/-20K
S8664-30K/-50K
Chip position accuracy with
respect to the cap center
X, Y
0.3
2.8
(20)
4.2 0.2
0.4 MAX.
5.9 0.1
5.08 0.2
S8664-02K
0.2
Type No.
a
S8664-05K
0.5
S8664-10K
1.0
S8664-20K
2.0
Y
X
8.1 0.1
9.1 0.2
1.5 MAX.
ACTIVE AREA
a
PHOTOSENSITIVE
SURFACE
0.45
LEAD
CASE
Chip position accuracy with
respect to the cap center
X, Y
0.4
3.1
(15)
4.9
INDEX MARK
1.4
PHOTOSENSITIVE SURFACE
0.5 MAX.
13.9 0.2
12.35 0.1
10.5 0.2
7.5 0.2
1.0 MAX.
ACTIVE AREA
a
0.45
LEAD
CASE
S8664-30K
3.0
Type No.
a
S8664-50K
5.0
S8664-55
5.0
1.5
5.08
(3.0)
(5.5)
0.45
5.0
0.3 MAX.
2.0
1.2
1.65
5.0
9.0
10.6
ACTIVE AREA
5 5
0.80
INDEX MARK
General tolerance: 0.2
EPOXY RESIN
PHOTOSENSITIVE
SURFACE
KAPDA0022EA
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