Features
Applications
P H O T O I C
Photo IC for power monitor
Output based on external voltage, high-speed response
S9009
PRELIMINARY DATA
Sep. 2002
S9009 is a photo IC having a high-speed amplifier that converts photocurrent generated by input light into a voltage based on an external Vref
(reference voltage) and amplifies the voltage and outputs it. This photo IC contains a PIN photodiode specifically designed for laser power
monitors to obtain good response waveform with no trailing tail. The gain can be adjusted by changing a feedback resistor Rf externally
connected to the inverting amplifier.
l High-speed response
l Analog output
(Photodiode + current-to-voltage conversion amplifier +
inverting amplifier)
l Large output amplitude: 2 V Max.
l External reference voltage: 2.8 V
l Laser power monitor for CD-R/RW pickups
1
I Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5 to +7
V
Output current
Io
2
mA
Power dissipation *
P
300
mW
Operating temperature
Topr
-20 to +70
C
Storage temperature
Tstg
-40 to +80
C
Soldering
-
230 C, 5 s
-
*1: Derate power dissipation at a rate of -4 mW/C above Ta=25 C
I Recommended operating conditions
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Operation supply voltage
Vcc
4.5
5
5.5
V
Reference voltage
Vref
Ta: 0 C Min.
2.6
2.8
Vcc-1.3
V
I Electrical and optical characteristics (Ta=25 C, Vcc=5 V, Vref=2.8 V, l=780 nm, Rf=2 kW *
)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Photo sensitivity
S
Photodiode,
l=780 nm
-
0.45
-
A/W
Photo sensitivity
ST
Photodiode + amp,
l=780 nm
-0.42
-0.46
-0.51
V/(mW/
mm
)
Current consumption
Icc
No input
-
16
20
mA
Output offset voltage
Voff
No input
-12.5
0
+12.5
mV
Output offset voltage drift
DVoff
Entire Topr range
-2
0
+2
mV
Response time
tr, tf
Output amplitude: 2 V
-
6.5
-
ns
Settling time
ts
Output amplitude: 2 V
Rise: 1 %
-
15
-
ns
Minimum output voltage
Vo Min.
Output amplitude: 2 V
-
-
0.5
V
*2: Bypass capacitors (0.1 F ceramic capacitor) have to be connected between Vcc and GND and also between Vref and GND
at a point within 7 mm from the lead end.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KPIC1051E01
Sep. 2002 DN
Photo IC for power monitor
S9009
2
(IN)
2 k
0.8 k
Vcc
BIN
OUT
Rf
R
L
C
L
V_Vcc
V_Vref
Rc *
Vref
GND
-
+
-
+
Rf: Inverting amplifier feedback resistance [1.2 k
to 3.9 k (S8876, S8905), 0.96 k to 3.2 k (S9009)],
Rc: Phase-compensation resistance, R
L
: Load resistance, C
L
: Load capacitance
* Rc is used for phase-compensating the second stage amplifier.
Adjust this resistance to obtain an optimum response for the middle value of Rf.
Up to 0.01 F
I IC block diagram and external connection
KPICC0088EA
I Dimensional outline (unit: mm)
KPICA0045EA
1.1
0.8
0.8
0.8
0.05
0.33
0.75
1.3
0.8
3.4
MIRROR AREA RANGE
3.8
3.9
4.0 *
4.0 *
4.2 0.2
(INCLUDING BURR)
0.4
3.2 0.2
(INCLUDING BURR)
CENTER OF
ACTIVE AREA
2.4
MIRROR AREA RANGE
2.8
3.0 *
2.9
3.0 *
5.0 0.3
0.45 0.3
0.45 0.3
(IN)
GND
GND
Vref
OUT
BIN
Vcc
GND
GND
(IN)
3.0 *
1.0 0.4
1.0 0.4
0.3
0.15
0.1
PHOTOSENSITIVE
SURFACE
Tolerance unless otherwise
noted: 0.1, 2
Shaded area indicates burr.
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
0.2
PDF 
ZIP