1
Semiconductor
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright
Harris Corporation 1999
CA3018, CA3018A
General Purpose Transistor Arrays
The CA3018 and CA3018A consist of four general purpose
silicon NPN transistors on a common monolithic substrate.
Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate
terminal for maximum flexibility.
The transistors of the CA3018 and the CA3018A are well
suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete
transistors in conventional circuits but in addition they
provide the advantages of close electrical and thermal
matching inherent in integrated circuit construction.
The CA3018A is similar to the CA3018 but features tighter
control of current gain, leakage, and offset parameters
making it suitable for more critical applications requiring
premium performance.
Features
Matched Monolithic General Purpose Transistors
h
FE
Matched
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%
V
BE
Matched
- CA3018A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2mV
- CA3018
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5mV
Operation From DC to 120MHz
Wide Operating Current Range
CA3018A Performance Characteristics Controlled from
10
A to 10mA
Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
Full Military Temperature Range . . . . . . . -55
o
C to 125
o
C
Applications
Two Isolated Transistors and a Darlington Connected
Transistor Pair for Low Power Applications at Frequencies
from DC through the VHF Range
Custom Designed Differential Amplifiers
Temperature Compensated Amplifiers
See Application Note, AN5296 "Application of the CA3018
Integrated Circuit Transistor Array" for Suggested Applica-
tions
Pinout
CA3018, CA3018A
(METAL CAN)
TOP VIEW
Part Number Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
CA3018 (obsolete)
-55 to 125
12 Pin Metal Can
T12.B
CA3018A
-55 to 125
12 Pin Metal Can
T12.B
12
9
11
10
8
7
6
5
4
3
2
1
Q
4
Q
3
Q
1
Q
2
SUBSTRATE
January 1999
File Number
338.5
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OBSOLETE PR
ODUCT
NO RECOMMENDED REPLA
CEMENT
Call Central Applications 1-800-442-7747
or email: centapp@harris.com
2
Absolute Maximum Ratings
Thermal Information
CA3018
CA3018A
Collector-to-Emitter Voltage, V
CEO
. . . . . . . . . . 15V
15V
Collector-to-Base Voltage, V
CBO
. . . . . . . . . . . . 20V
30V
Collector-to-Substrate Voltage, V
CIO
(Note 1) . . 20V
40V
Emitter-to-Base Voltage, V
EBO
. . . . . . . . . . . . . 5V
5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . 50mA
50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
JA
(
o
C/W)
JC
(
o
C/W)
Metal Can Package . . . . . . . . . . . . . . .
200
120
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . .175
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2.
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
CA3018
CA3018A
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
DC CHARACTERISTICS
Collector Cutoff Current (Figure 1)
I
CBO
V
CB
= 10V, I
E
= 0
-
0.002
100
-
0.002
40
nA
Collector Cutoff Current (Figure 2)
I
CEO
V
CE
= 10V, I
B
= 0
-
See
Fig. 2
5
-
See
Fig. 2
0.5
A
Collector Cutoff Current Darlington Pair
I
CEOD
V
CE
= 10V, I
B
= 0
-
-
-
-
-
5
A
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
15
24
-
15
24
-
V
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
20
60
-
30
60
-
V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
7
-
5
7
-
V
Collector-to-Substrate Breakdown Voltage
V
(BR)CIO
I
C
= 10
A, I
CI
= 0
20
60
-
40
60
-
V
Collector-to-Emitter Saturation Voltage
V
CES
I
B
= 1mA, I
C
= 10mA
-
0.23
-
-
0.23
0.5
V
Forward Current Transfer Ratio (Note 3)
(Figure 3)
h
FE
V
CE
= 3V
I
C
= 10mA
-
100
-
50
100
-
-
I
C
= 1mA
30
100
200
60
100
200
-
I
C
= 10
A
-
54
-
30
54
-
-
Magnitude of Static-Beta Ratio (Isolated
Transistors Q
1
and Q
2
) (Figure 3)
V
CE
= 3V,
I
C1
= I
C2
= 1mA
0.9
0.97
-
0.9
0.97
-
-
Forward Current Transfer Ratio Darling-
ton Pair (Q
3
and Q
4
) (Figure 4)
h
FED
V
CE
= 3V
I
C
= 1mA
1500
5400
-
2000
5400
-
-
I
C
= 100
A
-
-
-
1000
2800
-
-
Base-to-Emitter Voltage (Figure 5)
V
BE
V
CE
= 3V
I
E
= 1mA
-
0.715
-
0.600
0.715
0.800
V
I
E
= 10mA
-
0.800
-
-
0.800
0.900
V
Input Offset Voltage (Figures 5, 7)
V
CE
= 3V, I
E
= 1mA
-
0.48
5
-
0.48
2
mV
Temperature Coefficient: Base-to-Emitter
Voltage Q
1
, Q
2
(Figure 6)
V
CE
= 3V, I
E
= 1mA
-
-1.9
-
-
-1.9
-
mV/
o
C
V
BE1
V
BE2
V
BE
T
------------------
CA3018, CA3018A
3
Base (Q
3
)-to-Emitter (Q
4
) Voltage Dar-
lington Pair (Figure 8)
V
BED
(V
9-1
)
V
CE
= 3V
I
E
= 10mA
-
1.46
-
-
1.46
1.60
V
I
E
= 1mA
-
1.32
-
1.10
1.32
1.50
V
Temperature Coefficient: Base-to-Emitter
Voltage Darlington Pair (Q
3
and Q
4
)
(Figure 9)
V
CE
= 3V, I
E
= 1mA
-
4.4
-
-
4.4
-
mV/
o
C
Temperature Coefficient: Magnitude
of Input Offset Voltage
V
CC
= 6V, V
EE
= -6V,
I
C1
= I
C2
= 1mA
-
10
-
-
10
-
V/
o
C
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
(Figures 10 - 12)
NF
f = 1kHz, V
CE
= 3V,
I
C
= 100
A, Source
Resistance = 1k
-
3.25
-
-
3.25
-
dB
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio
(Figure 13)
h
FE
f = 1kHz, V
CE
= 3V,
I
C
= 1mA
-
110
-
-
110
-
-
Short Circuit Input Impedance
(Figure 13)
h
IE
f = 1kHz, V
CE
= 3V,
I
C
= 1mA
-
3.5
-
-
3.5
-
k
Open Circuit Output Impedance
(Figure 13)
h
OE
f = 1kHz, V
CE
= 3V,
I
C
= 1mA
-
15.6
-
-
15.6
-
S
Open Circuit Reverse Voltage
Transfer Ratio (Figure 13)
h
RE
f = 1kHz, V
CE
= 3V,
I
C
= 1mA
-
1.8 x
10
-4
-
-
1.8 x
10
-4
-
-
Admittance Characteristics
Forward Transfer Admittance
(Figure 14)
Y
FE
f = 1MHz, V
CE
= 3V,
I
C
= 1mA
-
31 -
j1.5
-
-
31 -
j1.5
-
mS
Input Admittance (Figure 15)
Y
IE
f = 1MHz, V
CE
= 3V,
I
C
= 1mA
-
0.3 +
j0.04
-
-
0.3 +
j0.04
-
mS
Output Admittance (Figure 16)
Y
OE
f = 1MHz, V
CE
= 3V,
I
C
= 1mA
-
0.001
+ j0.03
-
-
0.001
+ j0.03
-
mS
Reverse Transfer Admittance
(Figure 17)
Y
RE
f = 1MHz, V
CE
= 3V,
I
C
= 1mA
See Figure 17
mS
Gain Bandwidth Product (Figure 18)
f
T
V
CE
= 3V, I
C
= 3mA
300
500
-
300
500
-
MHz
Emitter-to-Base Capacitance
C
EB
V
EB
= 3V, I
E
= 0
-
0.6
-
-
0.6
-
pF
Collector-to-Base Capacitance
C
CB
V
CB
= 3V, I
C
= 0
-
0.58
-
-
0.58
-
pF
Collector-to-Substrate Capacitance
C
CI
V
CI
= 3V, I
C
= 0
-
2.8
-
-
2.8
-
pF
NOTE:
3. Actual forcing current is via the emitter for this test.
Electrical Specifications
T
A
= 25
o
C (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
CA3018
CA3018A
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
V
BED
T
----------------------
V
BE1
V
BE2
T
-------------------------------------
CA3018, CA3018A
4
Typical Performance Curves
FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT
vs TEMPERATURE
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR TRANSISTORS Q
1
AND Q
2
vs EMITTER CURRENT
FIGURE 4. TYPICAL STATIC FORWARD CURRENT - TRANSFER
RATIO FOR DARLINGTON CONNECTED
TRANSISTORS Q
3
AND Q
4
vs EMITTER CURRENT
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC AND INPUT OFFSET VOLTAGE
FOR Q
1
AND Q
2
vs EMITTER CURRENT
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC FOR EACH TRANSISTOR vs
TEMPERATURE
10
2
10
-1
10
1
10
-2
10
-3
10
-4
COLLECT
OR CUT
OFF CURRENT (nA)
0
25
50
75
100
125
AMBIENT TEMPERATURE (
o
C)
V
CB
= 15V
V
CB
= 10V
V
CB
= 5V
I
E
= 0
10
2
10
-1
10
1
10
-2
10
-3
COLLECT
OR CUT
OFF CURRENT (nA)
0
25
50
75
100
125
AMBIENT TEMPERATURE (
o
C)
I
B
= 0
V
CE
= 10V
V
CE
= 5V
10
3
EMITTER CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
ST
A
TIC FOR
W
ARD CURRENT
TRANSFER RA
TIO (h
FE
)
BET
A RA
TIO
120
110
100
90
80
70
60
50
0.01
0.1
1
10
0.8
0.9
1
1.1
h
FE
h
FE1
h
FE2
-------------
OR
h
FE2
h
FE1
-------------
V
CE
= 3V
T
A
= 25
o
C
ST
A
TIC FOR
W
ARD CURRENT TRANSFER
RA
TIO FOR D
ARLINGT
ON P
AIR (h
FED
)
8000
0.1
1
10
EMITTER CURRENT (mA)
7000
6000
5000
4000
3000
2000
1000
0
0.8
0.7
0.6
0.5
0.4
B
ASE-T
O-EMITTER V
O
L
T
A
GE (V)
0.01
0.1
1.0
10
EMITTER CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
V
BE
V
IO
= |V
BE1
- V
BE2
|
3
2
1
INPUT OFFSET V
O
L
T
A
GE Q
1
AND Q
2
(mV)
4
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
B
ASE-T
O-EMITTER V
O
L
T
A
GE (V)
-75
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (
o
C)
V
CE
= 3V
I
E
= 3mA
I
E
= 1mA
I
E
= 0.5mA
CA3018, CA3018A
5
FIGURE 7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs
TEMPERATURE
FIGURE 8. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC
FOR DARLINGTON PAIR (Q
3
AND Q
4
) vs EMITTER
CURRENT
FIGURE 9. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC
FOR DARLINGTON PAIR (Q
3
AND Q
4
) vs
TEMPERATURE
FIGURE 10. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 11. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 12. NOISE FIGURE vs COLLECTOR CURRENT
Typical Performance Curves
(Continued)
5
4
3
2
0.75
0.50
0.25
0
-75
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (
o
C)
V
CE
= 3V
I
E
= 10mA
I
E
= 1mA
I
E
= 0.1mA
OFFSET V
O
L
T
A
GE (mV)
B
ASE-T
O-EMITTER V
O
L
T
A
GE
FOR D
ARLINGT
ON P
AIR (V)
1.7
0.1
1
10
EMITTER CURRENT (mA)
1.6
1.5
1.4
1.3
1.2
V
CE
= 3V
T
A
= 25
o
C
V
CE
= 3V
B
ASE-T
O-EMITTER V
O
L
T
A
GE
FOR D
ARLINGT
ON P
AIR (V)
2
-75
1.75
1.50
1.25
1
0.75
-50
-25
0
AMBIENT TEMPERATURE (
o
C)
25
50
75
100
125
I
E
= 3mA
I
E
= 0.5mA
I
E
= 1mA
V
CE
= 3V
R
S
= 500
T
A
= 25
o
C
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
20
15
10
5
0
0.01
0.1
1
f = 0.1kHz
f = 1kHz
f = 10kHz
V
CE
= 3V
R
S
= 1000
T
A
= 25
o
C
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
20
15
10
5
0
0.01
0.1
1
f = 0.1kHz
f = 1kHz
f = 10kHz
V
CE
= 3V
R
S
= 10000
T
A
= 25
o
C
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
20
15
10
5
0
0.01
0.1
1
f = 0.1kHz
f = 1kHz
f = 10kHz
25
30
CA3018, CA3018A
6
FIGURE 13. h PARAMETERS vs COLLECTOR CURRENT
FIGURE 14. FORWARD TRANSFER ADMITTANCE (Y
FE
)
FIGURE 15. INPUT ADMITTANCE (Y
IE
)
FIGURE 16. OUTPUT ADMITTANCE (Y
OE
)
FIGURE 17. REVERSE TRANSFER ADMITTANCE (Y
RE
)
FIGURE 18. TYPICAL GAIN BANDWIDTH PRODUCT (f
T
) vs
COLLECTOR CURRENT
Typical Performance Curves
(Continued)
V
CE
= 3V
f = 1kHz
T
A
= 25
o
C
h
OE
h
FE
h
RE
h
IE
h
FE
= 110
h
IE
= 3.5k
h
RE
= 1.88 x 10
-4
h
OE
= 15.6
S
AT
1mA
h
RE
h
IE
100
10
1.0
0.1
NORMALIZED h P
ARAMETERS
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
FOR
W
ARD TRANSFER CONDUCT
ANCE (g
FE
)
OR SUSCEPT
ANCE (b
FE
) (mS)
FREQUENCY (MHz)
0.1
10
100
-20
-10
0
10
20
30
40
g
FE
b
FE
1
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
INPUT CONDUCT
ANCE (g
IE
)
OR SUSCEPT
ANCE (b
IE
) (mS)
FREQUENCY (MHz)
0.1
10
100
0
1
2
3
4
5
6
g
IE
b
IE
1
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
OUTPUT CONDUCT
ANCE (g
OE
)
OR SUSCEPT
ANCE (b
OE
) (mS)
FREQUENCY (MHz)
0
1
2
3
4
5
6
g
OE
b
OE
0.1
10
100
1
T
A
= 25
o
C, V
CE
= 3V, I
C
= 1mA
COMMON EMITTER CIRCUIT, BASE INPUT
REVERSE TRANSFER CONDUCT
ANCE (g
RE
)
OR SUSCEPT
ANCE (b
RE
) (mS)
FREQUENCY (MHz)
-2.0
-1.5
-1.0
-0.5
0
b
RE
1
100
10
g
RE
IS SMALL AT FREQUENCIES
LESS THAN 500MHz
800
700
600
500
400
300
200
100
1000
900
GAIN B
AND
WIDTH PR
ODUCT (MHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13 14
COLLECTOR CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
CA3018, CA3018A
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