S E M I C O N D U C T O R
3-9
HGTP3N60C3D, HGT1S3N60C3D,
HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
6A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
Packaging
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP3N60C3D
TO-220AB
G3N60C3D
HGT1S3N60C3D
TO-262AA
G3N60C3D
HGT1S3N60C3DS
TO-263AB
G3N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
Formerly Developmental Type TA49119.
GATE
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
COLLECTOR
(FLANGE)
GATE
EMITTER
C
E
G
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
6
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
3
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
24
A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA
18A at 480V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
33
W
Power Dissipation Derating T
C
> 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 82
.
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
4140.1
3-10
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
25V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 82
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
18
-
-
A
V
CE(PK)
= 600V
2
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.3
-
V
On-State Gate Charge
Q
G(ON)
IC = IC110,
VCE = 0.5 BVCES
V
GE
= 15V
-
10.8
13.5
nC
V
GE
= 20V
-
13.8
17.3
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
-
5
-
ns
Current Rise Time
t
RI
-
10
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
325
400
ns
Current Fall Time
t
FI
-
130
275
ns
Turn-On Energy
E
ON
-
85
-
J
Turn-Off Energy (Note 3)
E
OFF
-
245
-
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.0
2.5
V
Diode Reverse Recovery Time
t
RR
I
EC
= 3A, dI
EC
/dt = 200A/
s
-
22
28
ns
I
EC
= 1A, dI
EC
/dt = 200A/
s
-
17
22
ns
Thermal Resistance
R
JC
IGBT
-
-
3.75
o
C/W
Diode
-
-
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
3-11
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= -40
o
C
T
C
= 25
o
C
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
9.0V
8.5V
7.5V
7.0V
T
C
= 25
o
C
PULSE DURATION = 250
s
DUTY CYCLE <0.5%
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
T
C
= 150
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
SC
, PEAK SHOR
T CIRCUIT CURRENT(A)
0
20
30
50
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
S)
10
11
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
GE
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
3-12
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
t
D(ON)I
, TURN-ON DELA
Y TIME (ns)
3
1
2
3
4
I
CE
, COLLECTOR-EMITTER CURRENT (A)
20
5
6
10
V
GE
= 15V
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
D(OFF)I
, TURN-OFF DELA
Y TIME (ns)
500
400
300
200
V
GE
= 10V
V
GE
= 15V
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
RI
,
TURN-ON RISE TIME
(ns)
5
10
80
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
FI
,
F
ALL TIME
(ns)
V
GE
= 10V or 15V
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
300
200
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
0
E
ON
, TURN-ON ENERGY LOSS
(mJ)
0.1
0.2
0.3
0.4
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.5
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
0.1
0.2
0.3
0.4
0.5
0.6
0
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.8
0.7
V
GE
= 10V or 15V
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
3-13
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 3.75
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C, CAP
A
CIT
ANCE (pF)
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
GE
, GA
TE-EMITTER V
O
L
T
A
GE (V)
V
CE
, COLLECT
OR - EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
0
240
120
360
480
600
15
12
9
6
3
0
2
4
6
8
10
12
14
0
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
I
G
REF = 1.060mA
R
L
= 200
T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
JC
,
NORMALIZED THERMAL RESPONSE
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
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