S E M I C O N D U C T O R
1
HGTD3N60C3,
HGTD3N60C3S
6A, 600V, UFS Series N-Channel IGBTs
June 1997
Features
6A, 600V at T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25
o
C and
150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Symbol
N-CHANNEL ENHANCEMENT MODE
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3
TO-251AA
G3N60C
HGTD3N60C3S
TO-252AA
G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.
C
E
G
JEDEC TO-251AA
JEDEC TO-252AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1997
File Number
4139.3
2
Absolute Maximum Ratings
T
C
= 25
o
C
HGTD3N60C3
HGTD3N60C3S
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
6
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
3
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
24
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
18A at 480V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
33
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/
o
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . t
SC
8
s
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 82
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 3mA, V
GE
= 0V
16
30
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.5
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
25V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 82
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
18
-
-
A
V
CE(PK)
= 600V
2
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8.3
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
10.8
13.5
nC
V
GE
= 20V
-
13.8
17.3
nC
Current Turn-On Delay Time
t
d(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
-
5
-
ns
Current Rise Time
t
rI
-
10
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
325
400
ns
Current Fall Time
t
fI
-
130
275
ns
Turn-On Energy
E
ON
-
85
-
J
Turn-Off Energy (Note 3)
E
OFF
-
245
-
J
Thermal Resistance
R
JC
-
-
3.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
HGTD3N60C3, HGTD3N60C3S
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
9.0V
8.5V
7.5V
7.0V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
0
20
30
50
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
S)
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
GE
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTD3N60C3, HGTD3N60C3S
4
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d(ON)I
, TURN-ON DELA
Y TIME (ns)
3
1
2
3
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
5
6
10
V
GE
= 15V
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME (ns)
500
400
300
200
V
GE
= 10V
V
GE
= 15V
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
TURN-ON RISE TIME
(ns)
5
10
80
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL TIME
(ns)
V
GE
= 10V OR 15V
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
300
200
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
E
ON
, TURN-ON ENERGY LOSS
(mJ)
0.1
0.2
0.3
0.4
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.5
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
0.1
0.2
0.3
0.4
0.5
0.6
0
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.8
0.7
V
GE
= 10V or 15V
HGTD3N60C3, HGTD3N60C3S
5
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 3.75
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C, CAP
A
CIT
ANCE (pF)
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
V
CE
, COLLECT
OR T
O
EMITTER
V
O
L
T
A
GE (V)
Q
g
, GATE CHARGE (nC)
I
G
REF = 1.060mA, R
L
= 200
, T
C
= 25
o
C
0
240
120
360
480
600
15
12
9
6
3
0
V
CE
= 400V
2
4
6
8
10
12
14
V
CE
= 200V
V
CE
= 600V
0
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
JC
,
NORMALIZED THERMAL RESPONSE
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTD3N60C3, HGTD3N60C3S
6
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler's body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT's are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT's can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "ECCOSORBD
TM
LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of V
GEM
. Exceeding the rated V
GE
can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
ECCOSORBD
TM
is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating Frequency Information for a Typical Device (Fig-
ure 13) is presented as a guide for estimating device perfor-
mance for a specific application. Other typical frequency vs
collector current (I
CE
) plots are possible using the informa-
tion shown for a typical unit in Figures 4, 7, 8, 11 and 12. The
operating frequency plot (Figure 13) of a typical device
shows f
MAX1
or f
MAX2
whichever is smaller at each point.
The information is based on measurements of a typical
device and is bounded by the maximum rated junction tem-
perature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. t
d(OFF)I
and t
d(ON)I
are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
d(OFF)I
is important when controlling output ripple under a
lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JMAX
-
T
C
)/R
JC
. The sum of device switching and conduction losses
must not exceed P
D
. A 50% duty factor was used (Figure 13)
and the conduction losses (P
C
) are approximated by P
C
=
(V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 19. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss (I
CE
x V
CE
) during turn-
off. All tail losses are included in the calculation for E
OFF
; i.e.
the collector current equals zero (I
CE
= 0).
Test Circuit and Waveform
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
R
G
= 82
L = 1mH
V
DD
= 480V
+
-
RHRD460
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTD3N60C3, HGTD3N60C3S
7
HGTD3N60C3, HGTD3N60C3S
TO-251AA
3 LEAD JEDEC TO-251AA PLASTIC PACKAGE
LEAD 1
- GATE
LEAD 2
- COLLECTOR
LEAD 3
- EMITTER
TERM. 4
- COLLECTOR
b
2
E
A
c
SEATING
L
1
D
L
b
e
1
2
3
b
1
H
1
J
1
A
1
e
1
TERM. 4
PLANE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.086
0.094
2.19
2.38
-
A
1
0.018
0.022
0.46
0.55
3, 4
b
0.028
0.032
0.72
0.81
3, 4
b
1
0.033
0.040
0.84
1.01
3
b
2
0.205
0.215
5.21
5.46
3, 4
c
0.018
0.022
0.46
0.55
3, 4
D
0.270
0.290
6.86
7.36
-
E
0.250
0.265
6.35
6.73
-
e
0.090 TYP
2.28 TYP
5
e
1
0.180 BSC
4.57 BSC
5
H
1
0.035
0.045
0.89
1.14
-
J
1
0.040
0.045
1.02
1.14
6
L
0.355
0.375
9.02
9.52
-
L
1
0.075
0.090
1.91
2.28
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-251AA outline dated 9-88.
2. Solder finish uncontrolled in this area.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 10-95.
8
HGTD3N60C3, HGTD3N60C3S
TO-252AA
SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
LEAD 1
- GATE
LEAD 3
- EMITTER
TERM. 4
- COLLECTOR
b
2
E
D
L
3
L
e
b
1
b
1
3
A
L
c
SEATING
BACK VIEW
2
H
1
A
1
b
3
e
1
J
1
L
1
TERM. 4
0.265
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
(6.7)
0.265 (6.7)
0.070 (1.8)
0.118 (3.0)
0.063 (1.6)
0.090 (2.3)
0.063 (1.6)
0.090 (2.3)
PLANE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.086
0.094
2.19
2.38
-
A
1
0.018
0.022
0.46
0.55
4, 5
b
0.028
0.032
0.72
0.81
4, 5
b
1
0.033
0.040
0.84
1.01
4
b
2
0.205
0.215
5.21
5.46
4, 5
b
3
0.190
-
4.83
-
2
c
0.018
0.022
0.46
0.55
4, 5
D
0.270
0.290
6.86
7.36
-
E
0.250
0.265
6.35
6.73
-
e
0.090 TYP
2.28 TYP
7
e
1
0.180 BSC
4.57 BSC
7
H
1
0.035
0.045
0.89
1.14
-
J
1
0.040
0.045
1.02
1.14
-
L
0.100
0.115
2.54
2.92
-
L
1
0.020
-
0.51
-
4, 6
L
2
0.025
0.040
0.64
1.01
3
L
3
0.170
-
4.32
-
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-252AA outline dated 9-88.
2. L
3
and b
3
dimensions establish a minimum mounting surface for
terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Position of lead to be measured 0.090 inches (2.28mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 6 dated 10-96.
9
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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TEL: (65) 748-4200
FAX: (65) 748-0400
S E M I C O N D U C T O R
HGTD3N60C3, HGTD3N60C3S
TO-252AA
16mm TAPE AND REEL
330mm
50mm
13mm
22.4mm
16.4mm
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
L
COVER TAPE
USER DIRECTION OF FEED
8.0mm
16mm
GENERAL INFORMATION
1. USE "9A" SUFFIX ON PART NUMBER.
2. 2500 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
Revision 6 dated 10-96
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ZIP