CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
Harris Corporation 1995
1
S E M I C O N D U C T O R
HS-82C37ARH
Radiation Hardened CMOS High
Performance Programmable DMA Controller
Description
The Harris HS-82C37ARH is an enhanced, radiation
hardened CMOS version of the industry standard 8237A
Direct Memory Access (DMA) controller, fabricated using the
Harris hardened field, self-aligned silicon gate CMOS
process. The HS-82C37ARH offers increased functionality,
improved performance, and dramatically reduced power
consumption for the radiation environment. The high speed,
radiation hardness, and industry standard configuration of
the HS-82C37ARH make it compatible with radiation
hardened microprocessors such as the HS-80C85RH and
the HS-80C86RH.
The HS-82C37ARH can improve system performance by
allowing external devices to transfer data directly to or from
system memory. Memory-to-memory transfer capability is
also provided, along with a memory block initialization
feature. DMA requests may be generated by either
hardware or software, and each channel is independently
programmable with a variety of features for flexible
operation.
Static CMOS circuit design insures low operating power and
allows gated clock operation for an even further reduction of
power. Multimode programmability allows the user to select
from three basic types of DMA services, and reconfiguration
under program control is possible even with the clock to the
controller stopped. Each channel has a full 64K address and
word count range, and may be programmed to autoinitialize
these registers following DMA termination (end of process).
The Harris hardened field CMOS process results in
performance equal to or greater than existing radiation resis-
tant products at a fraction of the power.
Features
Radiation Hardened
- Total Dose >10
5
RAD (Si)
- Transient Upset > 10
8
RAD (Si)/s
- Latch Up Free EPI-CMOS
Low Power Consumption
- IDDSB = 50
A Maximum
- IDDOP = 4.0mA/MHz Maximum
Pin Compatible with NMOS 8237A and the Harris
82C37A
High Speed Data Transfers Up To 2.5 MBPS With 5MHz
Clock
Four Independent Maskable Channels With Autoinitializa-
tion Capability
Expandable to Any Number of Channels
Memory-to-Memory Transfer Capability
CMOS Compatible
Hardened Field, Self-Aligned, Junction Isolated CMOS
Process
Single 5V Supply
Military Temperature Range -55
o
C to +125
o
C
August 1995
Spec Number
518058
File Number
3042.1
DB NA
Ordering Information
PART NUMBER
TEMPERATURE RANGE
PACKAGE
HS1-82C37ARH-Q
-55
o
C to +125
o
C
40 Lead SBDIP
HS1-82C37ARH-8
-55
o
C to +125
o
C
40 Lead SBDIP
HS1-82C37ARH-Sample
+25
o
C
40 Lead SBDIP
HS9-82C37ARH-Q
-55
o
C to +125
o
C
42 Lead Ceramic Flatpack
HS9-82C37ARH-8
-55
o
C to +125
o
C
42 Lead Ceramic Flatpack
HS9-82C37ARH/Sample
+25
o
C
42 Lead Ceramic Flatpack
2
HS-82C37ARH
Functional Diagram
Pinouts
40 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
(SBDIP) MIL-STD-1835 CDIP2-T40
TOP VIEW
42 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) HARRIS OUTLINE K42.A
TOP VIEW
33
34
35
36
37
38
39
40
32
31
30
29
24
25
26
27
28
21
22
23
A5
A7
A6
A4
EOP
A3
DACK1
DB6
DB7
DACK0
DB5
A1
A2
A0
DB0
DB1
DB2
DB3
DB4
VDD
1
13
12
14
15
16
17
18
19
20
2
3
4
5
6
7
8
9
10
11
HRQ
CS
IOR
CLK
RESET
DACK2
IOW
MEMR
MEMW
NC
READY
HLDA
ADSTB
AEN
DACK3
DREQ3
DREQ2
DREQ1
DREQ0
(GND)
VSS
A5
A6
A3
DB0
VDD
A7
A1
DB1
DB2
DB3
DB4
NC
DACK0
DACK1
DB5
DB6
A4
DB7
HRQ
CS
MEMW
NC
READY
HLDA
ADSTB
AEN
IOR
IOW
CLK
RESET
DACK2
DACK3
NC
DREQ1
DREQ0
GND
MEMR
DREQ3
DREQ2
A0
A2
EOP
33
32
39
38
37
36
35
34
42
41
31
30
29
28
27
24
23
22
40
26
25
10
11
4
5
6
7
8
9
1
2
12
13
14
15
16
19
20
21
3
17
18
TIMING
AND
CONTROL
COMMAND (8)
DECREMENTOR
INC DECREMENTOR
I/O BUFFER
MASK (4)
REQUEST (4)
PRIORITY
ENCODER
AND
ROTATING
PRIORITY
LOGIC
TEMP WORD
COUNT REG (16)
16 BIT BUS
TEMP ADDRESS
REG (16)
16 BIT BUS
INTERNAL DATA BUS
MODE
(4 x 6)
TEMPORARY
(8)
STATUS (8)
WRITE
BUFFER
READ
BUFFER
READ BUFFER
BASE
ADDRESS
(16)
(16)
BASE
ADDRESS
(16)
BASE
WORD
COUNT
(16)
BASE
WORD
COUNT
OUTPUT
BUFFER
COMMAND
CONTROL
I/O BUFFER
D0-D1
DB0-DB7
A4-A7
A0-A3
EOP
RESET
CS
READY
CLOCK
AEN
ADSTB
MEMR
MEMW
IOR
IOW
DREQ0-
DREQ3
HLDA
HDQ
DACK0-
DACK3
4
4
A8-A15
Spec Number
518058
3
HS-82C37ARH
Pin Descriptions
SYMBOL
PIN
NUMBER
TYPE
DESCRIPTION
VDD
31
VDD: is the +5V power supply pin. A 0.1
F capacitor between pins 31 and 20 is recommended for de-
coupling.
GND
20
Ground
CLK
12
I
CLOCK INPUT: The Clock Input is used to generate the timing signals which control HS-82C37ARH
operations. This input may be driven from DC to 5MHz and may be stopped in either high or low state
for standby operation.
CS
11
I
CHIP SELECT: Chip Select is an active low input used to enable the controller onto the data bus for
CPU communications.
RESET
13
I
RESET: This is an active high input which clears the Command, Status, Request and Temporary Reg-
isters, the First/Last Flip-Flop, and the Mode Register Counter. The Mask Register is Set to ignore re-
quests. Following a Reset, the controller is in an idle cycle.
READY
6
I
READY: This signal can be sued to extend the memory read and write pulses from the HS-82C37ARH
to accommodate slow memories or I/O devices. Ready must not make transitions during its specified
set-up and hold times. Ready is ignored in Verify Transfer mode.
HLDA
7
I
HOLD ACKNOWLEDGE: The active high Hold Acknowledge from the CPU indicates that is has relin-
quished control of the system busses.
DREQ0-
DREQ3
16-19
I
DMA REQUEST: The DMA Request (DREQ) lines are individual asynchronous channel request inputs
used by peripheral circuits to obtain DMA service. In Fixed Priority, DREQ0 has the highest priority and
DREQ3 has the lowest priority. A request is generated by activating the DREQ line of a channel. DACK
will acknowledge the recognition of DREQ signal. Polarity of DREQ is programmable. Reset initializes
these lines to active. DREQ will not be recognized while the clock is stopped. Unused DREQ inputs
should be pulled High or Low (inactive) and the corresponding mask bit set.
DB0-
DB7
21-23
26-30
I/O
DATA BUS: The Data Bus lines are bidirectional three-state signals connected to the system data bus.
The outputs are enabled in the Program Condition during the I/O Read to output the contents of a reg-
ister to the CPU. The outputs are disabled and the inputs are read during an I/O Write cycle when the
CPU is programming the HS-82C37ARH Control Registers. During DMA cycles, the most significant 8
bits of the address are output onto the data bus to be strobed into an external latch by ADSTB. In Mem-
ory-to-Memory operations, data from the memory enters the HS-82C37ARH on the data bus during the
read-from-memory transfer, then during the write-to-memory transfer, the data bus outputs write the
data into the new memory location.
IOR
1
I/O
I/O READ: I/O Read is a bidirectional active low three-state line. In the Idle cycle, it is an input control
signal used by the CPU to read the internal registers. In the Active cycle, it is an output control signal
used by the HS-82C37ARH to access data from a peripheral during a DMA Write transfer.
IOW
2
I/O
I/O WRITE: I/O Write is a bidirectional active low three-state line. In the Idle cycle, it is an input control
signal used by the CPU to load information into the HS-82C37ARH. In the Active cycle, it is an output
control signal used by the HS-82C37ARH to load data to the peripheral during a DMA Read transfer.
EOP
36
I/O
END OF PROCESS: End of Process (EOP) is an active low bidirectional signal. Information concerning
the completion of DMA services is available at the bidirectional EOP pin.
The HS-82C37ARH allows an external signal to terminate an active DMA service by pulling the EOP
pin low. A pulse is generated by the HS-82C37ARH when terminal count (TC) for any channel is
reached, except for channel 0 in Memory-to-Memory mode. During Memory-to-Memory transfers, EOP
will be output when the TC for channel 1 occurs.
The EOP pin is driven by an open drain transistor on-chip, and requires an external pull-up resistor.
When an EOP pulse occurs, whether internally or externally generated, the HS-82C37ARH will termi-
nate the service, and if Autoinitialize is enabled, the base registers will be written to the current registers
of that channel. The mask bit and TC bit in the Status Register will be set for the currently active channel
by EOP unless the channel is programmed for Autoinitialize. In that case, the mask bit remains clear.
A0-A3
32-35
I/O
Address: The four least significant address lines are bidirectional three-state signals. In the Idle cycle,
they are inputs and are used by the HS-80C86RH to address the internal registers to be loaded or read.
In the Active cycle, they are outputs and provide the lower 4 bits of the output address.
Spec Number
518058
4
HS-82C37ARH
A4-A7
37-40
O
Address: The four most significant address lines are three-state outputs and provide 4 bits of address.
These lines are enabled only during the Active cycle.
HRQ
10
O
Hold Request: The Hold Request (HRQ) output is used to request control of the system bus. When a
DREQ occurs and the corresponding mask bit is clear, or a software DMA request is made, the HS-
82C37ARH issues HRQ. The HLDA signal then informs the controller when access to the system bus-
ses is permitted. For stand-alone operation where the HS-82C37ARH always controls the busses, HRQ
may be tied to HLDA. This will result in one S0 state before the transfer.
DACK0-
DACK3
14,15, 24,
25
O
DMA Acknowledge: DMA acknowledge is used to notify the individual peripherals when one has been
granted a DMA cycle. The sense of these lines is programmable. Reset initializes them to active low.
AEN
9
O
Address Enable: Address Enable enables the 8-bit latch containing the upper 8 address bits onto the
system address bus. AEN can also be used to disable other system bus drivers during DMA transfers.
AEN is active HIGH.
ADSTB
8
O
Address Strobe: This is an active high signal used to control latching of the upper address byte. It will
drive directly the strobe input of external transparent octal latches, such as the 82C82. During block op-
erations, ADSTB will only be issued when the upper address byte must be updated, thus speeding op-
eration through elimination of S1 states. (See Note 2).
MEMR
3
O
Memory Read: The Memory Read signal is an active low three-state output used to access data from
the selected memory location during a DMA Read or a Memory-to-Memory transfer.
MEMW
4
O
Memory Write: The Memory Write is an active low three-state output used to write data to the selected
memory location during a DMA Write or a Memory-to-Memory transfer.
NC
5
No connect. Pin 5 is open and should not be tested for continuity.
Pin Descriptions
(Continued)
SYMBOL
PIN
NUMBER
TYPE
DESCRIPTION
Spec Number
518058
5
Specifications HS-82C37ARH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6.5V
Input or Output Voltage Applied . . . . . . . .VSS - 0.3V to VDD + 0.3V
for All Grades
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Typical Derating Factor. . . . . . . . . . . . 4mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
38
o
C/W
5
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
72
o
C/W
10
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26.3mW/C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .13.9mW/C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage Range (VDD) . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -1.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
LIMITS
UNITS
MIN
MAX
TTL Output High Voltage
VOH1
VDD = 4.5V, IO = -2.5mA,
VIN = 0V or 4.0V
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
3.0
-
V
CMOS Output High Volt-
age
VOH2
VDD = 4.5V, IO = -100
A,
VIN = 0V or 4.0V
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VDD-
0.4
-
V
Output Low Voltage
VOL1
VDD = 4.5V, IO = +2.5mA,
VIN = 0V or 4.0V
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.4
V
Input Leakage Current
IIL or IIH
VDD = 5.5V, VIN = 0V or
5.5V Pins: 6, 7, 11-13, 16-19
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-1.0
1.0
A
Output Leakage Current
IOZL or
IOZH
VDD = 5.5V, VIN = 0V or
5.5V Pins: 1-4, 21-23, 26-
30, 32-40
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-10
10
A
Standby Power Supply
Current
IDDSB
VDD = 5.5V, IO = 0mA,
VIN = GND or VDD
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
+50
A
Operating Power Supply
Current
IDDOP
VDD = 5.5V, IO = 0mA,
VIN = GND or VDD,
f = 5MHz
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
20
mA
Functional Tests
FT
VDD = 4.5V and 5.5V,
VIN = GND or VDD,
f = 1MHz
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
Noise Immunity Functional
Test
FN
VDD = 4.5V and 5.5V, VIN =
GND or VDD - 1.5V and
VDD = 4.5V, VIN = 0.8V or
VDD
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
Spec Number
518058
PDF 
ZIP