5-1
Semiconductor
Features
6.2A and 5.4A, 600V
r
DS(ON)
= 1.2
and 1.6
Repetitive Avalanche Energy Rated
Simple Drive Requirements
Ease of Paralleling
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17426.
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFBC40
TO-220AB
IRFBC40
IRFBC42
TO-220AB
IRFBC42
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN (FLANGE)
GATE
SOURCE
DRAIN
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
2157.2
IRFBC40,
IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFBC40
IRFBC42
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
600
600
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
600
600
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
6.2
5.4
A
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
3.9
3.4
A
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
25
22
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
125
W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
1.0
W/
o
C
Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . E
AS
570
570
mJ
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A, (Figure 11)
600
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 4)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
IRFBC40
6.2
-
-
A
IRFBC42
5.4
-
-
A
Gate to Source Leakage
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 3.4A, (Figures 9, 10)
IRFBC40
-
0.97
1.2
IRFBC42
-
1.2
1.6
Forward Transconductance (Note 4)
g
fs
V
DS
100V, I
DS
= 3.4A, (Figure 13)
4.7
70
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 300V, I
D
6.2A, R
G
= 9.1
,
V
GS
= 10V,
R
L
= 47
, (Figures 17, 18)
Switching Speeds are Essentially ndependent of
Operating Temperature
-
13
20
ns
Rise Time
t
r
-
18
27
ns
Turn-Off Delay Time
t
d(OFF)
-
55
83
ns
Fall Time
t
f
-
20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 6.2A, V
DS
= 0.7 x Rated BV
DSS,
(Figures 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
40
60
nC
Gate to Source Charge
Q
gs
-
5.5
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
20
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz, (Figure 12)
-
1300
-
pF
Output Capacitance
C
OSS
-
160
-
pF
Reverse Transfer Capacitance
C
RSS
-
45
-
pF
IRFBC40, IRFBC42
5-3
IRFBC40, IRFBC42
Internal Drain Inductance
L
D
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
R
JA
Typical Socket Mount
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
6.2
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
25
A
Diode Source to Drain Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 6.2A, V
GS
= 0V, (Figure 8)
-
-
1.5
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/
s
200
450
940
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/
s
1.8
3.8
8.0
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 16mH, R
G
= 25
, peak I
AS
= 6.8A. (Figures 15, 16).
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
T
C,
CASE TEMPERATURE (
o
C)
50
75
100
25
10
8
6
0
4
I
D,
DRAIN CURRENT (A)
2
125
IRFBC40
150
IRFBC42
5-4
IRFBC40, IRFBC42
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
Typical Performance Curves
Unless Otherwise Specified (Continued)
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
Z
JC
, NORMALIZED TRANSIENT
THERMAL IMPED
ANCE (
o
C/W)
DUTY FACTOR: D = t
1
/t
2
t
2
P
DM
t
1
NOTES:
t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
0.02
0.01
0.5
0.1
0.2
0.05
0.02
SINGLE PULSE
10
1
1
10
10
2
0.1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
10
s
100
s
1ms
10ms
IRFBC40
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
IRFBC40
IRFBC42
IRFBC42
OPERATION IN THIS REGION
IS LIMITED BY r
DS(ON)
DC
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
60
120
180
240
0
300
10
8
6
0
4
I
D
, DRAIN CURRENT (A)
V
GS
= 5.0V
80
s PULSE TEST
2
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 10V
V
GS
= 6.0V
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
3
6
9
12
0
15
10
8
6
0
4
I
D
, DRAIN CURRENT (A)
80
s PULSE TEST
2
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
=10V
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
0
2
4
6
8
10
80
s PULSE TEST
V
DS
100V
T
J
= 150
o
C
T
J
= 25
o
C
10
-2
5-5
IRFBC40, IRFBC42
FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
0.1
0
0.3
0.6
0.9
1.2
1.5
T
J
= 150
o
C
T
J
= 25
o
C
24
I
D,
DRAIN CURRENT (A)
6
12
18
0
30
5.0
4.0
3.0
0
2.0
V
GS
= 20V
1.0
V
GS
= 10V
80
s PULSE TEST
DRAIN T
O
SOURCE ON RESIST
ANCE
0
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
2.4
1.2
0
60
120
160
-20
-40
20
40
100
140
I
D
= 3.4A
V
GS
= 10V
ON RESIST
ANCE
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
1.15
0.95
0.75
-20
20
100
160
BREAKDO
WN V
O
L
T
A
GE
0
-40
40
80
120 140
I
D
= 250
A
0
2
10
20
50
10
2
C, CAP
A
CIT
ANCE (pF)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
5
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
I
D,
DRAIN CURRENT (A)
2
4
6
8
0
10
10
8
6
0
4
g
fs
, TRANSCONDUCT
ANCE (S)
80
s PULSE TEST
2
V
DS
100V
T
J
= 150
o
C
T
J
= 25
o
C
5-6
IRFBC40, IRFBC42
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
Q
g(TOT),
TOTAL GATE CHARGE (nC)
12
24
36
48
0
60
4
20
8
GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
16
V
DS
= 360V
I
D
= 6.2A
FOR TEST CIRCUIT, SEE FIGURES 19, 20
V
DS
= 240V
V
DS
= 120V
12
0
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
5-7
IRFBC40, IRFBC42
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
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