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Электронный компонент: RF1S30N06LESM

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Copyright
Harris Corporation 1995
5-45
S E M I C O N D U C T O R
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
30A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Symbol
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
A
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
G
D
S
Features
30A, 60V
r
DS(ON)
= 0.047
2kV ESD Protected
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM
are N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
F30N06LE
RF1S30N06LE
TO-262AA
1S30N06L
RF1S30N06LESM
TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Absolute Maximum Ratings
T
C
= +25
o
C
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
60
V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
+10, -8
V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
30
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
96
0.645
W
W/
o
C
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . ESD
2
kV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-55 to +175
o
C
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
July 1995
File Number
3629.1
5-46
Specifications RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= +25
o
C
-
-
1
A
T
C
= +150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
= +10, -8V
-
-
10
A
On Resistance
r
DS(ON)
I
D
= 30A, V
GS
= 5V
-
-
0.047
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 30A,
R
L
= 1
, V
GS
= 5V,
R
GS
= 2.5
-
-
140
ns
Turn-On Delay Time
t
D(ON)
-
11
-
ns
Rise Time
t
R
-
88
-
ns
Turn-Off Delay Time
t
D(OFF)
-
30
-
ns
Fall Time
t
F
-
40
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0V to 10V
V
DD
= 48V,
I
D
= 30A,
R
L
= 1.6
-
51
62
nC
Gate Charge at 5V
Q
G(5)
V
GS
= 0V to 5V
-
28
34
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0V to 1V
-
1.8
2.6
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
1350
-
pF
Output Capacitance
C
OSS
-
290
-
pF
Reverse Transfer Capacitance
C
RSS
-
85
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.55
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
80
o
C/W
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 30A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 30A, dI
SD
/dt = 100A/
s
-
-
125
ns
5-47
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DRAIN CURRENT
(A)
1
10
200
100
1ms
DC
V
DSS
MAX = 60V
100
s
10ms
100ms
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
Z
JC
, NORMALIZED
THERMAL RESPONSE
0.01
10
0.1
1
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
DRAIN CURRENT (A)
40
20
10
0
25
50
75
100
125
150
175
30
t, PULSE WIDTH (s)
I
DM
, PEAK CURRENT CAP
ABILITY (A)
500
100
20
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
T
C
= +25
o
C
I
I
25
175
T
c
150
-----------------------
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 250
s, T
C
= +25
o
C
0
20
40
60
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 5V
80
100
+25
o
C
+175
o
C
V
DD
= 15V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
0.0
3.0
4.5
6.0
7.5
1.5
0
20
40
60
I
D(ON)
, ON ST
A
TE DRAIN CURRENT (A)
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
-55
o
C
80
100
5-48
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE
VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250
s, V
GS
= 5V, I
D
= 30A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
r
DS(ON)
, NORMALIZED
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0.0
0.5
1.0
1.5
2.0
V
GS(TH)
, NORMALIZED GA
TE
V
GS
= V
DS
, I
D
= 250
A
THRESHOLD VOL
T
AGE
I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
BV
DSS
, NORMALIZED
DRAIN-T
O-SOURCE BREAKDOWN VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
POWER DISSIP
A
TION MUL
TIPLIER
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V, f = 1MHz
2000
1500
500
0
0
5
10
15
20
25
C
,
CAP
ACIT
ANCE (pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
C
RSS
1000
C
OSS
C
ISS
60
45
30
15
0
5.00
3.75
2.50
1.25
0.00
V
DS
, DRAIN SOURCE VOL
T
AGE (V)
V
GS
, GA
TE SOURCE VOL
T
AGE (V)
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 2.0
I
G(REF)
= 0.62mA
V
GS
= 5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
I
G(REF)
I
G(ACT)
t, TIME (s)
20
I
G(REF)
I
G(ACT)
80
5-49
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
t
AV
, TIME IN AVALANCHE (ms)
0.01
0.1
1
10
I
AS
,
A
V
ALANCHE CURRENT (A)
1
10
100
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= +150
o
C
STARTING T
J
= +25
o
C
t
P
V
GS
0.01
L
I
L
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
V
DS
V
GS
0V
R
GS
DUT
R
L
t
ON
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS