1SS108
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-154A (Z)
Rev. 1
Features
Detection efficiency is very good.
Small temperature coefficient.
High reliability with glass seal.
Ordering Information
Type No.
Cathode
2nd band
Mark
Package Code
1SS108 White
Black
H
DO-35
Outline
1. Cathode
2. Anode
Cathode band
1
2
2nd band
H
1SS108
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
30
V
Average rectified current
I
O
15
mA
Junction temperature
Tj
125
C
Storage temperature
Tstg
55 to +125
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward current
I
F
3.0
--
--
mA
V
F
= 1V
Reverse current
I
R
--
--
100
A
V
R
= 10V
Capacitance
C
--
--
3.0
pF
V
R
= 1V, f = 1MHz
Rectifier efficiency
70
--
--
%
Vin = 2Vrms, f = 40MHz, R
L
= 5k
, C
L
= 20pF
ESD-Capability
--
70
--
--
V
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note:
Failure criterion; I
R
200
A at V
R
= 10V
Forward voltage V (V)
F
Forward current I (A)
F
10
6
10
1
0
0.4
0.8
1.2
1.6
2.0
10
3
10
5
10
4
10
2
Fig.1 Forward current Vs. Forward voltage
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