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Электронный компонент: 1SS120

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1SS120
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-167B (Z)
Rev. 2
Aug. 1995
Features
Low capacitance. (C = 3.0pF max)
Short reverse recovery time. (t
rr
= 3.5ns max)
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Mark
Package Code
1SS120
Light Blue
1
MHD
Outline
1
2
Cathode band
1. Cathode
2. Anode
1
1SS120
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
70
V
Reverse voltage
V
R
60
V
Peak forward current
I
FM
450
mA
Non-Repetitive peak forward surge current
I
FSM
*
1
A
Average forward current
I
O
150
mA
Power dissipation
Pd
250
mW
Junction temperature
Tj
175
C
Storage temperature
Tstg
65 to +175
C
Note:
Within 1s forward surge current.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
--
--
0.8
V
I
F
= 10mA
Reverse current
I
R
--
--
0.1
A
V
R
= 60V
Capacitance
C
--
--
3.0
pF
V
R
= 1V, f = 1MHz
Reverse recovery time
t
rr
*
--
--
3.5
ns
I
F
= 10mA, V
R
= 6V, R
L
= 50
Note:
Reverse recovery time test circuit
3k
0.1
F
Ro = 50
Rin = 50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
1SS120
3
Forward voltage V (V)
F
0
0.2
0.8
10
10
4
10
3
Forward current I (A)
F
2
0.6
1.0
0.4
10
1
1.2
Ta = 25
C
Ta = 25
C
Ta = 125
C
Ta = 75
C
Fig.1 Forward current Vs. Forward voltage
Reverse voltage V (V)
R
0
20
10
10
9
10
7
Reverse current I (A)
R
6
60
80
40
10
5
10
4
100
10
8
Ta = 75
C
Ta = 125
C
Ta = 25
C
Fig.2 Reverse current Vs. Reverse voltage
1SS120
4
Reverse voltage V (V)
R
1.0
10
2
10
1.0
10
Capacitance C (pF)
1
10
f = 1MHz
Fig.3 Capacitance Vs. Reverse voltage
1SS120
5
Package Dimensions
26.0 Min
2.4 Max
2.0
Max
0.4
26.0 Min
Cathode band (Light Blue)
1
2
1
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
MHD
DO-34
--
0.084
1
2
Cathode
Anode
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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