ChipFind - документация

Электронный компонент: 1SS286

Скачать:  PDF   ZIP
1SS286
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-302A (Z)
Rev. 1
Sep. 1995
Features
Very low reverse current.
Detection efficiency is very good.
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Mark
Package Code
1SS286
Green
7
MHD
Outline
1
2
Cathode band
1. Cathode
2. Anode
7
1SS286
Rev.1, Sep. 1995, page 2 of 6
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
25
V
Forward current
I
F
35
mA
Power dissipation
Pd
150
mW
Junction temperature
Tj
100
C
Storage temperature
Tstg
55 to +100
C
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
--
--
0.6
V
I
F
= 10mA
Reverse voltage
V
R
25
--
--
V
I
R
= 10A
Reverse current
I
R
--
--
10
nA
V
R
= 10V
Capacitance
C
--
--
1.2
pF
V
R
= 0V, f = 1MHz
Capacitance deviation
C
--
--
0.1
pF
V
R
= 0V, f = 1MHz
Forward voltage
deviation
V
F
--
--
10
mV
I
F
= 10mA
ESD-Capability
--
10
--
--
V
*
1
C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion; I
R
20A
2. Each group shall unify a multiple of 4 diodes
1SS286
Rev.1, Sep. 1995, page 3 of 6
10
4
Forward voltage V (V)
F
Forward current I (A)
F
10
5
10
10
10
2
6
3
10
7
10
8
10
9
0
0.2
0.4
0.6
0.8
1.0
10
1
Fig.1 Forward current Vs. Forward voltage
Reverse voltage V (V)
R
0
5
10
10
7
10
6
Reverse current I (A)
R
8
25
20
10
9
10
10
15
10
Fig.2 Reverse current Vs. Reverse voltage
1SS286
Rev.1, Sep. 1995, page 4 of 6
Reverse voltage V (V)
R
10
Capacitance C (pF)
1.0
40
10
2
f = 1MHz
10
1
1.0
Fig.3 Capacitance Vs. Reverse voltage
1SS286
Rev.1, Sep. 1995, page 5 of 6
Package Dimensions
26.0 Min
2.4 Max
2.0
Max
0.4
26.0 Min
Cathode band (Green)
1
2
7
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
MHD
DO-34
--
0.084
1
2
Cathode
Anode
Unit: mm