2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC458 (LG) and 2SC2310
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SA1031, 2SA1032
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SA1031
2SA1032
Unit
Collector to base voltage
V
CBO
30
55
V
Collector to emitter voltage
V
CEO
30
50
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
100
100
mA
Emitter current
I
E
100
100
mA
Collector power dissipation
P
C
300
300
mW
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
2SA1031, 2SA1032
3
Electrical Characteristics (Ta = 25C)
2SA1031
2SA1032
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
--
--
55
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
--
--
50
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
--
--
0.5
A
V
CB
= 18 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.5
--
--
0.5
A
V
EB
= 2 V, I
C
= 0
DC current trnsfer ratio
h
FE
*
1
100
--
500
100
--
320
V
CE
= 12 V,
I
C
= 2 mA
Base to emitter voltage
V
BE
--
--
0.8
--
--
0.8
V
V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
0.2
--
--
0.2
V
I
C
= 10 mA,
I
B
= 1 mA
Gain bandwidth product f
T
200
280
--
200
280
--
MHz
V
CE
= 12 V,
I
C
= 2 mA
Collector output
capacitance
Cob
--
3.3
4.0
--
3.3
4.0
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise figure
NF
--
--
5
--
--
5
dB
V
CE
= 6 V,
I
C
= 0.1 mA,
R
g
= 500
,
f = 120 Hz
Note:
1. The 2SA1031 and 2SA1032 are grouped by h
FE
as follows.
B
C
D
2SA1031
100 to 200
160 to 320
250 to 500
2SA1032
100 to 200
160 to 320
--
2SA1031, 2SA1032
4
0
100
200
300
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
2
4
6
8
10
0.2
0.4
Collector Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics (1)
0.6
0.8
1.0
I
B
= 0
5
A
10
15
20
25
25
0
2
4
6
8
10
5
10
Collector Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics (2)
15
20
25
I
B
= 0
5
A
10
15
20
0
1
2
3
4
5
0.2
0.4
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
V
CE
= 5 V
Ta = 75
C
25
2SA1031, 2SA1032
5
200
300
400
500
600
700
0.1
0.01
1.0
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
10
100
V
CE
= 5 V
0
100
200
300
400
500
1.0
0.5
2
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
5
10
20
V
CE
= 10 V
Ta = 75
C
0
0.12
0.08
0.04
0.20
0.16
0.24
0.28
2
1
5
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
10
20
50 100
I
C
= 10 I
B
25
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