2SA836
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
55
V
Collector to emitter voltage
V
CEO
55
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
55
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
nA
V
CB
= 18 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
50
nA
V
EB
= 2 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
160
--
500
V
CE
= 12 V, I
C
= 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
0.1
0.5
V
I
C
= 10 mA, I
B
= 1 mA
Base to emitter voltage
V
BE
--
0.66
0.75
V
V
CE
= 12 V, I
C
= 2 mA
Gain bandwidth product
f
T
--
200
--
MHz
V
CE
= 12 V, I
E
= 2 mA
Collector output capacitance
Cob
--
2.0
--
pF
V
CB
= 10 V, I
E
= 0, f = 1MHz
Noise figuer
NF
--
1
5
dB
V
CE
= 6 V,
f = 10 Hz
--
0.5
1
dB
I
C
= 0.1mA,
R
g
= 10 k
f = 1 kHz
Note:
1. The 2SA836 is grouped by h
FE
as follows.
C
D
160 to 320
250 to 500
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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