2SB1001
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD1367
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2SB1001
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
16
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
2
A
Collector peak current
i
C(peak)
*
1
3
A
Collector power dissipation
P
C
*
2
1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 ms, Duty cycle
20%
2. Value on the alumina ceramic board (12.5
20
0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
16
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.1
A
V
CB
= 16 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.1
A
V
EB
= 5 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
100
--
320
V
CE
= 2 V,
I
C
= 0.1 A (Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
--
0.15
0.3
V
I
C
= 1 A,
I
B
= 0.1 A (Pulse test)
Base to emitter saturation
voltage
V
BE(sat)
--
1.0
1.2
V
I
C
= 1 A,
I
B
= 0.1 A (Pulse test)
Gain bandwidth product
f
T
--
150
--
MHz
V
CE
= 2 V,
I
C
= 10 mA
Collector output capacitance
Cob
--
50
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SB1001 is grouped by h
FE
as follows.
Mark
BH
BJ
h
FE
100 to 200
160 to 320
2SB1001
3
0
50
100
150
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Typical Output Characteristics (1)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
0
2
10
4
6
8
100
80
60
40
20
I
B
= 0
0.05 mA
0.1
0.2
0.3
0.15
0.25
0.35
Typical Output Characteristics (2)
2.0
1.6
1.2
0.8
0.4
Collector to Emitter Voltage V
CE
(V)
0
0.4
0.8
1.2
1.6
2.0
Collector Current I
C
(A)
I
B
= 0
5 mA
20
25
15
10
Typical Transfer Characteristics
Collector Current I
C
(mA)
1
3
10
30
100
300
1,000
Base to Emitter Voltage V
BE
(V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
= 2 V
Pulse
Ta = 75
C
25
25
2SB1001
4
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
1
3
10
30
100 300 1,000
10
30
100
300
1,000
3,000
10,000
DC Current Transfer Ratio h
FE
Ta = 75
C
25
25
V
CE
= 2 V
Pulse
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
V
CE
(sat)
(V)
Base to Emitter Saturation Voltage
V
BE
(sat)
(V)
3
10
30
100 300 1,000 3,000
0.003
0.01
0.03
0.1
0.3
3.0
1.0
I
C
= 10 I
B
Pulse
Saturation Voltage vs. Collector Current
V
BE
(sat)
V
CE
(sat)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
10
30
100
300
1,000
0.1
0.3
1.0
3
10
f = 1 MHz
I
E
= 0
4.5
0.1
1.8 Max
1.5
0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5
0.1
4.25 Max
0.8 Min
1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
UPAK
--
Conforms
0.050 g
Unit: mm
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