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Электронный компонент: 2SB1012(K)

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2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
5 k
(Typ)
1 k
(Typ)
I
D
3
2
1
2SB1012(K)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
1.5
A
Collector peak current
I
C(peak)
3.0
A
Collector power dissipation
P
C
*
1
20
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
C to E diode forward current
I
D
*
1
1.5
A
Note:
1. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
A
V
CB
= 120 V, I
E
= 0
I
CEO
--
--
10
A
V
CE
= 100 V, R
BE
=
DC current transfer ratio
h
FE
2000
--
30000
V
CE
= 3 V, I
C
= 1 A*
1
Collector to emitter saturation
V
CE(sat)1
--
--
1.5
V
I
C
= 1 A, I
B
= 1 mA*
1
voltage
V
CE(sat)2
--
--
2.0
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
Base to emitter saturation
V
BE(sat)1
--
--
2.0
V
I
C
= 1 A, I
B
= 1 mA*
1
voltage
V
BE(sat)2
--
--
2.5
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
C to E diode forward voltage
V
D
--
--
3.0
V
I
D
= 1.5 A*
1
Turn on time
t
on
--
0.5
--
s
I
C
= 1 A, I
B1
= I
B2
= 1 mA
Turn off time
t
off
--
2.0
--
s
Note:
1. Pulse test
2SB1012(K)
3
0
50
100
150
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
10
20
30
0.003
0.01
0.03
0.1
0.3
1.0
3
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
3
10
30
100
300
Area of Safe Operation
i
C
(peak)
I
C
(max)
Ta = 25
C
1 Shot pulse
DC (T
C
= 25
C)
PW =
10 ms
100
s
1 ms
1
s
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
1
2
3
4
5
Typical Output Characteristics
1
2
3
4
5
T
C
= 25
C
Pulse
I
B
= 0.3 mA
0.5 mA
1 mA
3 mA
5 mA
7 mA
30
100
300
1,000
3,000
10,000
30,000
Collector current I
C
(A)
DC current transfer ratio h
FE
0.03
0.1
0.3
1.0
3
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 3 V
Pulse Test
Ta = 75
C
25
C
25
C
2SB1012(K)
4
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
0.03
0.1
0.3
1.0
3
Collector to emitter saturation voltage
V
CE (sat)
(V)
Base to emitter saturation voltage
V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
V
BE (sat)
V
CE (sat)
Ta = 25
C
Pulse Test
l
C
/l
B
= 200
500
200
500
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
Switching time t (
s)
0.03
0.1
0.3
1.0
3
Switching Time vs. Collector Current
Ta = 25
C
V
CC
= 30 V
I
C
= 500 I
B1
= 500 I
B2
t
f
t
on
t
stg
0.1
0.3
1.0
3
10
30
100
Time t
Thermal resistance
j-c
(
C/W)
0.1
0.1
1.0
1.0
10
10
100 (s)
100 (ms)
Transient Thermal Resistance
0.1100 ms
0.1100 s
T
C
= 25
C
3.1
+0.15
0.1
8.0
0.5
2.3
0.3
1.1
3.7
0.7
11.0
0.5
15.6
0.5
0.8
2.29
0.5
2.29
0.5
0.55
1.2
2.7
0.4
120
120
120
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
--
--
0.67 g
Unit: mm