3SK186
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
12
V
Gate 1 to source voltage
V
G1S
10
V
Gate 2 to source voltage
V
G2S
10
V
Drain current
I
D
35
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
125
C
Storage temperature
Tstg
55 to +125
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12
--
--
V
V
G1S
= V
G2S
= 5 V,
I
D
= 200
A
Gate 1 to source breakdown
voltage
V
(BR)G1SS
10
--
--
V
I
G1
=
10
A, V
G2S
= V
DS
= 0
Gate 2 to source breakdown
voltage
V
(BR) G2SS
10
--
--
V
I
G2
=
10
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
--
--
100
nA
V
G1S
=
8 V, V
G2S
= V
DS
= 0
Gate 2 cutoff current
I
G2SS
--
--
100
nA
V
G2S
=
8 V, V
G1S
= V
DS
= 0
Gate 1 to source cutoff voltage V
G1S(off)
+0.5
--
0.8
V
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 100
A
Gate 2 to source cutoff voltage V
G2S(off)
+0.5
--
0.8
V
V
DS
= 6 V, V
G1S
= 3V,
I
D
= 100
A
Drain current
I
DSS
0
--
4
mA
V
DS
= 6 V, V
G2S
= 3V, V
G1S
= 0
Forward transfer admittance
|y
fs
|
15
--
--
mS
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 kHz
Input capacitance
Ciss
--
1.7
2.2
pF
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 MHz
Output capacitance
Coss
--
1.0
1.4
pF
Reverse transfer capacitance
Crss
--
0.017
0.03
pF
Power gain
PG
16
19
--
dB
V
DS
= 4 V, V
G2S
= 3V,
I
D
= 10 mA, f = 900 MHz
Noise figure
NF
--
3.0
4.5
dB
Note:
Marking is "FI".
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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