ChipFind - документация

Электронный компонент: 2SB1072L

Скачать:  PDF   ZIP
2SB1072(L), 2SB1072(S)
Silicon PNP Triple Diffused
Application
Medium speed power amplifier
Outline
4
12
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
3 k
(Typ)
0.4 k
(Typ)
I
D
1
2, 4
3
2SB1072(L), 2SB1072(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
80
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
4
A
C to E diode forward current
I
D
*
1
4
A
Collector peak current
I
C(peak)
8
A
Collector power dissipation
P
C
*
1
20
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
80
--
--
V
I
C
= 25 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
A
V
CB
= 80 V, I
E
= 0
I
CEO
--
--
10
A
V
CE
= 60 V, R
BE
=
DC current transfer ratio
h
FE
1000
--
20000
V
CE
= 3 V, I
C
= 2 A*
1
Collector to emitter saturation
V
CE(sat)1
--
--
1.5
V
I
C
= 2 A, I
B
= 4 mA*
1
voltage
V
CE(sat)2
--
--
3.0
V
I
C
= 4 A, I
B
= 40 mA*
1
Base to emitter saturation
V
BE(sat)1
--
--
2.0
V
I
C
= 2 A, I
B
= 4 mA*
1
voltage
V
BE(sat)2
--
--
3.5
V
I
C
= 4 A, I
B
= 40 mA*
1
C to E diode forward voltage
V
D
--
--
3.0
V
I
D
= 4 A*
1
Turn on time
t
on
--
0.5
--
s
I
C
= 2 A, I
B1
= I
B2
= 4 mA
Storage time
t
stg
--
1.5
--
s
Fall time
t
f
--
1.0
--
s
Note:
1. Pulse test.
2SB1072(L), 2SB1072(S)
3
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
Case temperature T
C
(
C)
150
Collector power dissipation P
C
(W)
Area of Safe Operation
Collector to emitter voltage V
CE
(V)
i
C(peak)
I
C(max)
PW = 10 ms
1 ms
100
s
DC(T
C
= 25
C)
Ta = 25
C
1 Shot Pulse
1
5
2
20
100
10
50
Collector current I
C
(A)
1
s
20
10
3
1.0
0.3
0.1
0.03
I
B
= 0.3 mA
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Typical Output Characteristics
5
4
3
2
1
0
2
4
Collector to emitter voltage V
CE
(V)
6
8
10
Collector current I
C
(A)
P
C
= 20 W
V
CE
= 3 V
DC Current Transfer Ratio
vs. Collector Current
30000
10000
3000
1000
300
100
30
0.1
0.3
DC current transfer ratio h
FE
1.0
10
3
Collector current I
C
(A)
T
C
= 75
C
T
C
= 25
C
T
C
= 25
C
2SB1072(L), 2SB1072(S)
4
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
V
BE(sat)
100
10
1.0
0.1
0.1
0.3
1.0
3
10
Saturation Voltage vs. Collector Current
V
CE(sat)
I
C
/I
B
= 500
T
C
= 75
C
T
C
= 25
C
T
C
= 25
C
t
stg
30
10
3
1.0
Switching time t (
s)
0.3
0.1
0.03
0.1
0.3
1.0
3
10
Switching Time vs. Collector Current
t
on
t
f
V
CC
= 30 V
I
C
= 500 I
B1
= 500 I
B2
Collector current I
C
(A)
Transient Thermal Resistance
100 ms10 sec.
100
10
1.0
0.1
0.1
1.0
10
Time t
1.0
(ms)
100
(s)
10
1 ms100 ms
T
C
= 25
C
Thermal resistance
j-C
(
C/W)
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
DPAK (L)-(1)
--
Conforms
0.42 g
Unit: mm
6.5
0.5
2.3
0.2
0.55
0.1
1.2
0.3
0.55
0.1
5.5
0
.
5
1.7
0.5
16.2
0.5
3.1
0.5
5.4
0.5
1.15
0.1
2.29
0.5
2.29
0.5
0.8
0.1