ChipFind - документация

Электронный компонент: 2SB1079

Скачать:  PDF   ZIP
2SB1079
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1559
Outline
TO-3P
1 k
(Typ)
400
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
2SB1079
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
20
A
Collector peak current
I
C(peak)
30
A
Base current
I
B
3
A
Collector power dissipation
P
C
*
1
100
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
--
--
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BRCEO
100
--
--
V
I
C
= 25 mA, R
BE
=
Collector to emitter sustain
voltage
V
CEO(sus)
100
--
--
V
I
C
= 200 mA, R
BE
=
*
1
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
A
V
CB
= 100 V, I
E
= 0
I
CEO
--
--
1.0
mA
V
CE
= 80 V, R
BE
=
DC current transfer ratio
h
FE
1000
--
20000
V
CE
= 3 V, I
C
= 10 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
--
--
2.0
V
I
C
= 10 A, I
B
= 20 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
--
--
2.5
V
Collector to emitter saturation
voltage
V
CE(sat)2
--
--
3.0
V
I
C
= 20 A, I
B
= 200 mA*
1
Base to emitter saturation
voltage
V
BE(sat)2
--
--
3.5
V
Turn on time
t
on
--
0.6
--
s
I
C
= 10 A, I
B1
= I
B2
= 20 mA
Storage time
t
stg
--
3.5
--
s
Note:
1. Pulse Test.
2SB1079
3
Maximum Collector Dissipation
Curve
120
80
40
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
Area of Safe Operation
100
30
10
3
1.0
Collector current I
C
(A)
0.3
0.1
3
10
100
30
300
Collector to emitter voltage V
CE
(V)
Ta = 25
C
1 Shot Pulse
i
C(peak)
1
s
I
C(max)
DC T
C
= 25
C
PW = 10 ms
1 ms
100
s
Typical Output Characteristics
T
C
= 25
C
I
B
= 0.5 mA
1
1.5
2
2.5
4
20
16
12
8
4
0
1
Collector current I
C
(A)
2
Collector to emitter voltage V
CE
(V)
3
5
4
3.5
3
DC Current Transfer Ratio vs.
Collector Current
30000
10000
3000
300
100
1000
30
0.3
1.0
3
10
30
DC current transfer ratio h
FE
Collector current I
C
(A)
V
CE
= 3 V
Pulse
Ta = 75
C
25
C
25
C
2SB1079
4
Saturation Voltage vs.
Collector Current
Ta = 25
C
Pulse
10
3
1.0
0.3
0.1
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
0.03
0.01
0.3
Collector current I
C
(A)
1.0
3
10
30
V
BE(sat)
V
CE(sat)
I
C
/
I
B
= 200
500
500
200
Switching Time vs. Collector Current
Switching time t (
s)
10
3
1.0
0.3
0.1
0.03
0.01
0.3
1.0
3
Collector current I
C
(A)
10
30
t
f
t
on
t
stg
V
CC
= 30V
I
C
= 500/
B1
= 500/
B2
Ta = 25
C
Transient Thermal Resistance
10
3
1.0
0.3
0.1
0.03
0.01
0.1
1.0
10
100 (s)
(ms)
0.1
1.0
10
100
Time t
Thermal resistance
j-c
(
C/W)
T
C
= 25
C
1 Shot
0.1100 s
0.1100 ms
3.2
0.2
4.8
0.2
1.5
0.3
2.8
0.6
0.2
1.0
0.2
18.0
0.5
19.9
0.2
15.6
0.3
0.5
1.0
5.0
0.3
1.6
1.4 Max
2.0
2.0
14.9
0.2
3.6
0.9
1.0
5.45
0.5
5.45
0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
--
Conforms
5.0 g
Unit: mm