2SB1409(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
4
12
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SB1409(L)/(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
180
V
Collector to emitter voltage
V
CEO
160
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
1.5
A
Collector peak current
I
C(peak)
3
A
Collector power dissipation
P
C
*
1
18
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
180
--
--
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
160
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 160 V, I
E
= 0
DC current transfer ratio
h
FE1
*
1
60
--
200
V
CE
= 5 V, I
C
= 150 mA*
2
h
FE2
30
--
--
V
CE
= 5 V, I
C
= 500 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1
V
I
C
= 500 mA, I
B
= 50 mA
Base to emitter voltage
V
BE
--
--
1.5
V
V
CE
= 5 V, I
C
= 150 mA
Gain bandwidth product
f
T
--
240
--
MHz
V
CE
= 5 V, I
C
= 150 mA
Collector output capacitance
Cob
--
25
--
pF
V
CB
= 10 A, I
E
= 0, f = 1 MHz
Notes: 1. The 2SB1409(L)/(S) is grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
2. Pulse test.
2SB1409(L)/(S)
3
0
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50
100
150
10
30
20
0.01
0.03
0.1
0.3
1.0
10
3
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
3
10
30
100
300
Area of Safe Operation
I
C
(max)
i
C
(peak)
PW =
10 ms
1 ms
DC Operation (T
C
= 25
C)
Ta = 25
C
1 Shot Pulse
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
Typical Output Characteristics
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
I
B
= 0
T
C
= 25
C
P
C
= 18 W
1 mA
1.5
2.5
3.5
4.5
2
3
4
5
10
30
100
300
1,000
Collector current I
C
(A)
DC current transfer ratio h
FE
0.01
0.03
0.1
0.3
1.0
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
Ta
= 25
C
2SB1409(L)/(S)
4
0.01
0.1
1.0
10
Collector current I
C
(A)
0.001
0.01
0.1
1.0
Collector to emitter saturation voltage
V
CE (sat)
(V)
Saturation Voltage vs. Collector Current
l
C
= 10 l
B
Ta
= 25
C
0.1
0.3
1.0
3
10
Collector current I
C
(A)
0.03
0.1
0.3
1.0
3.0
Base to emitter saturation voltage
V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
l
C
= 10 l
B
Ta
= 25
C
0
0.4
0.8
1.2
1.6
2.0
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
0
0.4
0.8
1.2
1.6
2.0
Typical Transfer Characteristics
V
CE
= 5 V
Ta = 25
C
10
30
100
300
1,000
Collector current I
C
(A)
Gain bandwidth product f
T
(MHz)
0.01
0.03
0.1
0.3
1.0
Gain Bandwidth Product vs.
Collector Current
V
CE
= 5 V
Ta = 25
C
2SB1409(L)/(S)
5
3
10
30
100
300
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
1
3
10
30
100
Collector Output Capacitance vs.
Collector to Base Voltage
f
= 1 MHz
I
E
= 0
Ta = 25
C
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