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Электронный компонент: 2SB649

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2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
2SB649, 2SB649A
2
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
2SB649
2SB649A
Unit
Collector to base voltage
V
CBO
180
180
V
Collector to emitter voltage
V
CEO
120
160
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
1.5
1.5
A
Collector peak current
I
C(peak)
3
3
A
Collector power dissipation
P
C
1
1
W
P
C
*
1
20
20
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Note:
1. Value at T
C
= 25
C
2SB649, 2SB649A
3
Electrical Characteristics (Ta = 25C)
2SB649
2SB649A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180 --
--
180 --
--
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120 --
--
160 --
--
V
I
C
= 10 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
--
--
10
A
V
CB
= 160 V, I
E
= 0
DC current transfer ratio h
FE1
*
1
60
--
320
60
--
200
V
CE
= 5 V,
I
C
= 150 mA
h
FE2
30
--
--
30
--
--
V
CE
= 5 V,
I
C
= 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
--
--
1
--
--
1
V
I
C
= 500 mA,
I
B
= 50 mA
Base to emitter voltage
V
BE
--
--
1.5
--
--
1.5
V
V
CE
= 5 V,
I
C
= 150 mA
Gain bandwidth product f
T
--
140
--
--
140
--
MHz
V
CE
= 5 V,
I
C
= 150 mA
Collector output
capacitance
Cob
--
27
--
--
27
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Notes: 1. The 2SB649 and 2SB649A are grouped by h
FE1
as follows.
2. Pulse test
B
C
D
2SB649
60 to 120
100 to 200
160 to 320
2SB649A
60 to 120
100 to 200
--
2SB649, 2SB649A
4
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
Area of Safe Operation
I
Cmax
(13.3 V, 1.5 A)
(40 V, 0.5 A)
DC Operation (T
C
= 25
C)
(120 V, 0.038 A)
(160 V, 0.02 A)
2SB649A
2SB649
3
1.0
0.3
0.1
0.03
0.01
1
3
10
Collector to emitter voltage V
CE
(V)
30
100
300
Collector current I
C
(A)
T
C
= 25
C
P
C
= 20 W
Typical Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
10
40
20
I
B
= 0
0.5 mA
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
30
50
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
Typical Transfer Characteristics
500
100
Collector current I
C
(mA)
10
1
0
0.4
Base to emitter voltage V
BE
(V)
0.8
0.2
0.6
1.0
V
CE
= 5 V
Ta = 75
C
25
25
2SB649, 2SB649A
5
DC Current Transfer Ratio
vs. Collector Current
350
V
CE
= 5V
Ta = 75
C
25
C
25
C
350
250
200
150
DC current transfer ratio h
FE
100
50
0
1
10
100
1,000
Collector current I
C
(mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10
Collector current I
C
(mA)
100
25
25
1,000
Collector to emitter saturation voltage
V
CE(sat)
(V)
Ta = 75
C
Collector current I
C
(mA)
I
C
= 10 I
B
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10
100
1,000
Base to emitter saturation voltage
V
BE(sat)
(V)
Base to Emitter Saturation Voltage
vs. Collector Current
Ta = 25
C
25
75
V
CE
= 5 V
Gain Bandwidth Product
vs. Collector Current
240
200
160
120
80
40
0
10
30
Gain bandwidth product f
T
(MHz)
100
300
1,000
Collector current I
C
(mA)
2SB649, 2SB649A
6
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
200
100
50
20
10
5
2
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
3.1
+0.15
0.1
8.0
0.5
2.3
0.3
1.1
3.7
0.7
11.0
0.5
15.6
0.5
0.8
2.29
0.5
2.29
0.5
0.55
1.2
2.7
0.4
120
120
120
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
--
--
0.67 g
Unit: mm
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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