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Электронный компонент: 2SB715

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2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier
Complementary pair with 2SD755, 2SD756 and 2SD756A
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SB715, 2SB716, 2SB716A
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SB715
2SB716
2SB716A
Unit
Collector to base voltage
V
CBO
100
120
140
V
Collector to emitter voltage
V
CEO
100
120
140
V
Emitter to base voltage
V
EBO
5
5
5
V
Collector current
I
C
50
50
50
mA
Collector power dissipation
P
C
750
750
750
mW
Junction temperature
Tj
150
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
55 to +150
C
Electrical Characteristics (Ta = 25C)
2SB715
2SB716
2SB716A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
100 --
--
120 --
--
140 --
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
100 --
--
120 --
--
140 --
--
V
I
C
= 1 mA,
R
BE
=
Collector cutoff current
I
CBO
--
--
0.5
--
--
--
--
--
--
A
V
CB
= 80 V, I
E
= 0
--
--
--
--
--
0.5
--
--
0.5
A
V
CB
= 100 V, I
E
= 0
DC current transfer ratio h
FE1
*
1
250
--
800
250
--
800
250
--
500
V
CE
= 12 V,
I
C
= 2 mA
h
FE2
125
--
--
125
--
--
125
--
--
V
CE
= 12 V,
I
C
= 10 mA
Base to emitter voltage
V
BE
--
--
0.75 --
--
0.75 --
--
0.75 V
V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
0.2
--
--
0.2
--
--
0.2
V
I
C
= 10 mA,
I
B
= 1 mA
Gain bandwidth product f
T
--
150
--
--
150
--
--
150
--
MHz V
CE
= 12 V,
I
C
= 5 mA
Collector output
capacitance
Cob
--
1.8
--
--
1.8
--
--
1.8
--
pF
V
CB
= 25 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SB715, 2SB716 and 2SB716A are grouped by h
FE1
as follows.
D
E
2SB715, 2SB716 250 to 500
400 to 800
2SB716A
250 to 500
--
2SB715, 2SB716, 2SB716A
3
0
50
100
150
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
750
500
250
Typical Output Characteristics
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
0
10
50
20
30
40
10
8
6
4
2
I
B
= 0
2
A
4
6
8
10
12
14
16
Typical Transfer Characteristics
Collector Current I
C
(mA)
0.01
0.03
0.1
0.3
1.0
3
10
Base to Emitter Voltage V
BE
(V)
0.2
0.4
0.6
0.8
V
CE
= 12 V
Pulse
Ta = 100
C
75 50 25
25
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
0.01 0.03
0.1
0.3
1.0
3
10
30
0
200
400
600
800
1,000
DC Current Transfer Ratio h
FE
Ta = 100
C
0
25
V
CE
= 12 V
Pulse
75 50 25
2SB715, 2SB716, 2SB716A
4
Gain Bandwidth Product vs.
Collector Current
5
10
30
100
300
1,000
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
0.01 0.03
0.1
0.3
1.0
3
10
3050
V
CE
= 12 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0.5
1.0
2
5
10
20
50
1
3
10
30
100
f = 1 MHz
I
E
= 0
Area of Safe Operation
1
2
5
10
20
50
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
5
10 20
50 100 200
500
Ta = 25
C
P
C
= 750 mW
DC Operation
I
C
(max)
(50 V, 15 mA)
2SB716
2SB716A
(100 V, 7.5 mA)
(120 V, 5 mA)
(140 V, 4 mA)
2SB715
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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