2SC2545, 2SC2546, 2SC2547
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SA1083, 2SA1084 and 2SA1085
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SC2545, 2SC2546, 2SC2547
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SC2545
2SC2546
2SC2547
Unit
Collector to base voltage
V
CBO
60
90
120
V
Collector to emitter voltage
V
CEO
60
90
120
V
Emitter to base voltage
V
EBO
5
5
5
V
Collector current
I
C
100
100
100
mA
Emitter current
I
E
100
100
100
mA
Collector power dissipation
P
C
400
400
400
mW
Junction temperature
Tj
150
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
55 to +150
C
2SC2545, 2SC2546, 2SC2547
3
Electrical Characteristics (Ta = 25C)
2SC2545
2SC2546
2SC2547
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
60
--
--
90
--
--
120
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
60
--
--
90
--
--
120
--
--
V
I
C
= 1 mA,
R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.1
--
--
0.1
--
--
0.1
A
V
CB
= 50 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.1
--
--
0.1
--
--
0.1
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
250
--
1200 250
--
1200
250
--
800
V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
0.2
--
--
0.2
--
--
0.2
V
I
C
= 10 mA,
I
B
= 1 mA
Base to emitter voltage
V
BE
--
0.6
--
--
0.6
--
--
0.6
--
V
V
CE
= 12 V,
I
C
= 2 mA
Gain bandwidth product f
T
--
90
--
--
90
--
--
90
--
MHz V
CE
= 12 V,
I
C
= 2 mA
Collector output
capacitance
Cob
--
3.0
--
--
3.0
--
--
3.0
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise voltage referred
input
e
n
--
0.5
--
--
0.5
--
--
0.5
--
nV/
Hz
V
CE
= 6V,
I
C
= 10 mA,
f = 1 kHz,
R
g
= 0,
f = 1Hz
Note:
1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by h
FE
as follows.
D
E
F
2SC2545, 2SC2546
250 to 500
400 to 800
600 to 1200
2SC2547
250 to 500
400 to 800
--
2SC2545, 2SC2546, 2SC2547
4
0
200
400
600
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
10
30
20
50
40
4
70
60
8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
12
16
20
50
40
30
20
10
A
P
C
= 0.4 W
I
B
= 0
0
4
12
8
20
16
4
8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
12
16
20
10
15
20
25
5
A
I
B
= 0
0
0.2
0.1
2
1.0
0.5
10
5
0.2
0.4
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
V
CE
= 12 V
2SC2545, 2SC2546, 2SC2547
5
0.1
100
50
500
1,000
200
5,000
2,000
0.2
0.5 1.0
2
5
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
10 20
50 100
V
CE
= 12 V
Pulse
1
0.02
0.01
0.1
0.2
0.05
1.0
0.5
2
5
10
20
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
vs. Collector Current
50
100
I
C
= 10 I
B
1
0.2
0.1
1.0
2
0.5
10
5
2
5
10
20
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Base to Emitter Saturation Voltage
vs. Collector Current
50
100
I
C
= 10 I
B
1
50
20
200
500
100
2,000
1,000
2
5
10
20
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
50
100
V
CE
= 12 V
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