2SC2734
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
11
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
11
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
3
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 10 V, I
E
= 0
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.7
V
I
C
= 10 mA, I
B
= 5 mA
DC current transfer ratio
h
FE
20
90
200
V
CE
= 10 V, I
C
= 5 mA
Gain bandwidth product
f
T
1.4
3.5
--
GHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
Cob
--
0.9
1.5
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Conversion gain
CG
--
15
--
dB
V
CC
= 6 V, I
C
= 2 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm),
f
out
= 30 MHz
Noise figure
NF
--
9
--
dB
V
CC
= 6 V, I
C
= 2 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm),
f
out
= 30 MHz
Oscillating output voltage
V
OSC
--
140
--
mV
V
CC
= 6 V, I
C
= 5 mA,
f = 930 MHz
Note:
Marking is "GC".
2SC2734
6
f
osc
= 930 MHz
(0 dBm)
L
4
L
6
L
5
C
3
V
CC
80 p
200 p
12 p
8 p
100
C
2
V
BB
L
3
L
1
L
2
D.U.T.
0.047
200
1 k
f
out
= 30 MHz
R
L
= 50
*
* Disk Capacitor
R
C
L
Unit
:
:
:
F
H
23
22
13
13
11
3
11
90
90
90
90
90
130
130
120
4
7
7
7
20
Unit : mm
L
1
:
1 mm Enameled Copper wire
L
2
:
1 mm Enameled Copper wire
L
3
:
1 mm Enameled Copper wire
L
4
:
1 mm Enameled Copper wire
L
5
: Bobbin
5 mm inside dia,
0.2 mm 20 Turns Enameled Copper wire
L
6
:
0.5 mm Enameled Copper wire 1 Turn inside dia
6 mm
C
1
: 20 pF max. Air Trimmer Condenser
C
2,
C
3
: 1000 pF Air Core Capacitor
Conversion Gain, Noise Figure Test Curcuit
Cautions
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Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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