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Электронный компонент: 2SC2735

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2SC2735
Silicon NPN Epitaxial
Application
UHF/VHF Local oscillator, frequency converter
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
2SC2735
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
3
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 10 V, I
C
= 0
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 20 mA, I
B
= 4 mA
DC current transfer ratio
h
FE
40
--
--
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
Cob
--
0.85
1.5
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
600
1200
--
MHz
V
CE
= 10 V, I
C
= 10 mA
Oscillating output voltage
V
OSC1
--
210
--
mV
V
CC
= 12 V, I
C
= 7 mA,
f
OSC
= 300 MHz
V
OSC2
--
130
--
mV
V
CC
= 12 V, I
C
= 7 mA,
f
OSC
= 930 MHz
Conversion gain
CG
--
21
--
dB
V
CC
= 12 V, I
C
= 2 mA,
f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
Noise figure
NF
--
6.5
--
dB
V
CC
= 12 V, I
C
= 2 mA,
f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
Note:
Marking is "JC".
2SC2735
3
0
50
100
150
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
40
120
80
200
160
5
1
2
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio
vs. Collector Current
10
20
50
V
CE
= 10 V
0
0.4
1.2
0.8
2.0
1.6
5
1
2
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product
vs. Collector Current
10
20
50
V
CE
= 10 V
0
0.4
1.2
0.8
2.0
1.6
5
1
2
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance
vs. Collector to Base Voltage
10
20
50
I
E
= 0
f = 1 MHz
2SC2735
4
0
0.4
1.2
0.8
2.0
1.6
5
1
2
Collector to Base Voltage V
CB
(V)
Reverse Transfer Capacitance C
re
(pF)
Reverse Transfer Capacitance
vs. Collector to Base Voltage
10
20
50
Emitter Common
I
C
= 0 V
f = 1 MHz
0
4
12
8
20
16
8
4
Collector Current I
C
(mA)
Base Time Constant r
bb'
C
C
(ps)
Base Time Constant
vs. Collector Current
12
16
20
V
CB
= 10 V
f = 31.8 MHz
0
100
300
200
500
400
4
2
Collector Current I
C
(mA)
Oscillating Output Voltage V
osc1
(mV)
Oscillating Output Voltage
vs. Collector Current
6
8
10
V
CC
= 12 V
f
osc
= 300 MHz
0
50
150
100
250
200
8
4
Supply Voltage V
CC
(V)
Oscillating Output Voltage V
osc1
(mV)
Oscillating Output Voltage
vs. Supply Voltage
12
16
20
I
C
= 7 mA
f
osc
= 300 MHz
2SC2735
5
0
40
120
80
200
160
4
2
Collector Current I
C
(mA)
Oscillating Output Voltage V
osc2
(mV)
Oscillating Output Voltage
vs. Collector Current
6
8
10
V
CC
= 12 V
f
osc
= 930 MHz
0
40
120
80
200
160
8
4
Supply Voltage V
CC
(V)
Oscillating Output Voltage V
osc2
(mV)
Oscillating Output Voltage
vs. Supply Voltage
12
16
20
I
C
= 7 mA
f
osc
= 930 MHz
0
5
15
10
25
20
4
2
Collector Current I
C
(mA)
Conversion Gain CG (dB)
Conversion Gain vs. Collector Current
6
8
10
V
CC
= 12 V
f = 200 MHz
f
osc
= 230 MHz
(0 dBm)
0
4
12
8
20
16
2
1
Collector Current I
C
(mA)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
3
4
5
V
CC
= 12 V
f = 200 MHz
f
osc
= 230 MHz
(0 dBm)
2SC2735
6
V
OSC2
UHF Oscillating Output Voltage Test Circuit
330
1.2 p
9 p
470
Ferrite Bead
V
BB
L
1
L
1
: Polyurethane Coated Copper Wire
1.0 mm
L
2
: Polyurethane Coated Copper Wire
0.8 mm
L
3
:
0.3 mm Enameled Copper wire, 10 Turns with 470
(1/4W)Resistor.
Test Frequency : f
osc
= 930 MHz

Test Equipment : YHP 4271A Vector Voltmeter
L
2
V
CC
L
1
L
3
L
2
2,200 p
6.8 k
120 k
V
T
1,000 p
1,000 p
1,000 p
ISV70
V
osc
Output
Unit
Dimensions of Cavity
(Dimensions in mm)
(Dimensions in mm)
C : F
R :
15
26
10
10
5
8
D.U.T.
2SC2735
7
20,000 p
V
OSC1
VHF Oscillating Output Voltage Test Circuit
L
1
: Inside dia
3 mm,
3 mm Enameled Copper Wire 12 Turns
Test Frequency : f
osc
= 300 MHz
L
1
V
T
f
osc
Monitor
V
osc
Output
V
CC
V
BB
200
D.U.T.
4,700 p
4,700 p
1,000 p
7 p
1.5 p
2.2 k
1.1 M
4,700 p
1SV70
200
5.6 p
12 p
Unit C : F
R :
L : H
2SC2735
8
VHF Conversion Gain : Noise Figure Test Circuit
V
CC
V
BB
L
1
L
3
L
4
L
2
56 p
4.2 p
330
18 p
560
80 p
27 p
2,200 p
2,200 p
2,200 p
1.5 p
f = 200 MHz
Unit C : F
R :
L
1
: Inside dia
5 mm,
0.5 mm Enameled Copper Wire 4 Turns
L
2
: Inside dia
4 mm,
0.5 mm Enameled Copper Wire 4 Turns
L
3
: Inside dia
3 mm,
0.2 mm Enameled Copper Wire 6 Turns
L
4
: Outside dia
5 mm Bobbin,
0.2 mm Enameled Copper Wire 16 Turns, using Ferrite bead.
f
osc
= 230 MHz
(0 dBm)
f
oat
= 30 MHz
R
L
= 50
Ferrite Bead
D.U.T.
0.16
0 0.1
+ 0.10
0.06
3 0.4
+ 0.10
0.05
0.95
0.95
1.9
0.2
2.95
0.2
2.8
+ 0.2 0.6
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
--
Conforms
0.011 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
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: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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