ChipFind - документация

Электронный компонент: 2SC2736

Скачать:  PDF   ZIP
2SC2736
Silicon NPN Epitaxial
Application
UHF/VHF frequency converter
Local oscillator
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
2SC2736
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
3
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
500
nA
V
CB
= 15 V, I
C
= 0
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.7
V
I
C
= 10 mA, I
B
= 5 mA
DC current transfer ratio
h
FE
30
--
200
V
CE
= 10 V, I
C
= 5 mA
Collector output capacitance
Cob
--
--
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
1400
2200
--
MHz
V
CE
= 10 V, I
C
= 5 mA
Conversion gain
CG
1
--
22.5
--
dB
V
CC
= 12 V, I
C
= 2 mA,
f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
CG
2
--
10
--
dB
V
CC
= 12 V, I
C
= 2 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm),
f
Out
= 30 MHz
Noise figure
NF
--
4.0
--
dB
V
CC
= 12 V, I
C
= 2 mA,
f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
Oscillating output voltage
V
OSC1
--
300
--
mV
V
CC
= 12 V, I
C
= 7 mA,
f
OSC
= 300 MHz
V
OSC2
--
200
--
mV
V
CC
= 12 V, I
C
= 7 mA,
f
OSC
= 930 MHz
Note:
Marking is "TC".
2SC2736
3
0
50
100
150
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
20
40
60
80
100
1
2
5
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
10
20
50
V
CE
= 10 V
0
1,000
2,000
3,000
4,000
5,000
1
2
5
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
10
20
50
V
CE
= 10 V
0
0.2
0.4
0.6
0.8
1.0
1
2
5
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
10
20
50
f = 1 MHz
I
E
= 0
2SC2736
4
0
0.2
0.4
0.6
0.8
1.0
1
2
5
Collector to Base Voltage V
CB
(V)
Reverse Transfer Capacitance C
re
(pF)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
10
20
50
f = 1 MHz
Emitter Common
0
4
8
12
16
20
4
8
Collector Current I
C
(mA)
Base Time Constant r
bb'
C
C
(ps)
Base Time Constant vs.
Collector Current
12
16
20
V
CB
= 10 V
f = 31.8 MHz
0
5
10
15
20
25
10
4
0
8
12
16
20
2
4
Collector Current I
C
(mA)
Conversion Gain CG (dB)
Noise Figure NF (dB)
Conversion Gain, Noise Figure vs.
Collector Current
6
8
V
CC
= 12 V
f = 200 MHz
f
osc
= 230 MHz
(0 dBm)
f
out
= 30 MHz
CG
NF
0
5
10
15
20
25
0
10
20
16
20
12
Oscillating Injection Voltage V
osc
(dBm)
Conversion Gain CG (dB)
Noise Figure NF (dB)
Conversion Gain, Noise Figure vs.
Oscillating Injection Voltage
8
4
V
CC
= 12 V
I
C
= 2 mA
f = 200 MHz
f
osc
= 230 MHz
f
out
= 30 MHz
CG
NF
2SC2736
5
0
4
8
12
16
20
10
2
4
Collector Current I
C
(mA)
Conversion Gain CG (dB)
Conversion Gain vs.
Collector Current
6
8
V
CC
= 12 V
f = 900 MHz
f
osc
= 930 MHz
(0dBm)
f
out
= 30 MHz
0
100
200
300
400
500
20
4
8
Collector Current I
C
(mA)
Oscillating Output Voltage V
osc1
(mV)
Oscillating Output Voltage vs.
Collector Current
12
16
V
CC
= 12 V
f
osc
= 300 MHz
0
100
200
300
400
500
20
4
8
Collector Current I
C
(mA)
Oscillating Output Voltage V
osc2
(mV)
Oscillating Output Voltage vs.
Collector Current
12
16
V
CC
= 12 V
f
osc
= 930 MHz
0
100
200
300
400
500
20
4
8
Supply Voltage V
CC
(V)
Oscillating Output Voltage V
osc
(mV)
Oscillating Output Voltage vs.
Supply Voltage
12
16
f
osc
= 900 MHz
f
osc
= 300 MHz
I
C
= 7 mA
2SC2736
6
VHF Conversion Gain (CG
1
) : Noise Figure Test Circuit
V
CC
V
BB
L
1
L
3
L
4
L
2
56 p
4.2 p
330
18 p
560
80 p
27 p
2,200 p
2,200 p
2,200 p
1.5 p
f = 200 MHz
Unit C : F
R :
L
1
:
0.5 mm Enameled Copper Wire
4 Turns inside dia
5 mm
L
2
:
0.5 mm Enameled Copper Wire
4 Turns inside dia
4 mm
L
3
:
0.2 mm Enameled Copper Wire
6 Turns inside dia
3 mm
L
4
: Outside dia
5 mm Bobbin,
0.2 mm Enameled Copper Wire
16 Turns Using Ferrite bead.
f
osc
= 230 MHz
(0 dBm)
f
out
= 30 MHz
R
L
= 50
Ferrite Bead
D.U.T.
2SC2736
7
UHF Conversion Gain (CG
2
) Test Circuit
V
BB
Unit C : F
R :
L : H
L
1
:
1 mm Enameled
Copper Wire
L
2
:
1 mm Enameled
Copper Wire
L
3
:
1 mm Enameled
Copper Wire
L
4
:
1 mm Enameled
Copper Wire
L
5
: Bobbin
5 mm inside dia,
0.2 mm Enameled Copper
Wire 20 Turns
L
6
:
0.5 mm Enameled Copper Wire 1 Turn inside dia
6 mm
C
1
: 20 pF max Air Trimmer Condenser
C
2
, C
3
: 1000 pF Air Core Capacitor
L
1
L
3
L
4
L
5
L
6
V
CC
C
3
C
1
C
2
L
2
12 p
80 p
0.047
200
1 k
200 p
100
D.U.T.
23
22
13
90
90
90
13
20
3
11
77
7
130
90
90
90
120
11
4
8 p
*
*Disk Capacitor
f = 900 MHz
f
osc
= 930 MHz
(0 dBm)
f
out
= 30 MHz
R
L
= 50
2SC2736
8
20,000 p
VHF Oscillating Output Voltage (V
osc1
) Test Circuit
L
1
:
0.3 mm Enameled Copper Wire
3 Turns inside dia
3 mm
Test Frequency
f
osc
= 300 MHz
L
1
V
T
f
osc
Monitor
V
osc
Output
V
CC
V
BB
200
D.U.T.
4,700 p
4,700 p
1,000 p
7 p
1.5 p
2.2 k
1.1 M
4,700 p
1SV70
200
5.6 p
12 p
Unit C : F
R :
L : H
2SC2736
9
UHF Oscillating Output Voltage (V
osc2
) Test Circuit
330
1.2 p
9 p
470
V
BB
L
1
: Polyurethane Coated
Copper Wire
L
2
: Polyurethane Coated
Copper Wire
L
3
:
0.3 mm Enameled Copper
wire, 10 Turns with
470
(1/4W)Resistor.
V
CC
L
1
L
3
L
2
2,200 p
6.8 k
120 k
V
T
1,000 p
1,000 p
1,000 p
ISV70
V
osc
Output
Unit
Dimensions of Cavity
(Unit : mm)
R :
C : F
15
26
10
10
5
8
Ferrite Bead
Test Frequency
f
osc
= 930 MHz
D.U.T.
0.16
0 0.1
+ 0.10
0.06
3 0.4
+ 0.10
0.05
0.95
0.95
1.9
0.2
2.95
0.2
2.8
+ 0.2 0.6
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
--
Conforms
0.011 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: