2SC3336
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-3P
1
2
3
2SC3336
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
15
A
Collector peak current
I
C(peak)
25
A
Base current
I
B
7.5
A
Collector power dissipation
P
C
*
1
100
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
V
CEO(sus)
400
--
--
V
I
C
= 0.2 A, R
BE
=
, L = 100 mH
voltage
V
CEX(sus)
400
--
--
V
I
C
= 15 A, I
B1
= 3.0 A, I
B2
= 1 A
V
BE
= 5.0 V, L = 180
H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
10
--
--
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
50
A
V
CB
= 400 V, I
E
= 0
I
CEO
--
--
50
A
V
CE
= 350 V, R
BE
=
DC current transfer ratio
h
FE1
12
--
--
V
CE
= 5.0 V, I
C
= 7.5 A*
1
h
FE2
5
--
--
V
CE
= 5.0 V, I
C
= 15 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 7.5 A, I
B
= 1.5 A*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
Turn on time
t
on
--
--
0.5
s
I
C
= 15 A, I
B1
= I
B2
= 3.0 A
Storage time
t
stg
--
--
1.5
s
V
CC
= 150 V
Fall time
t
f
--
0.3
0.5
s
Note:
1. Pulse test
2SC3336
3
Maximum Collector Dissipation
Curve
150
100
50
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
100
30
3
1.0
10
0.3
Collector current I
C
(A)
0.1
0.03
0.01
1
3
30
300
10
100
1,000
Collector to emitter voltage V
CE
(V)
i
C(peak)
I
C(max)
DC Operation
T
C
= 25
C
PW = 10 ms
1 ms
250
s
50
s
Area of Safe Operation
25
s
Ta = 25
C, 1 Shot
Collector Current Derating Rate
Case temperature T
C
(
C)
IS/B Limit Area
100
80
60
40
20
0
50
100
150
Collector current derating rate (%)
Transient Thermal Resistance
10 ms10 s
10
s10 ms
10
3
1.0
0.3
0.1
0.03
0.01
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Time t
Thermal resistance
j-c
(
C/W)
T
C
= 25
C
2SC3336
4
Reverse Bias Area of Safe Operation
25
20
15
10
5
0
100
I
B2
= 1 A
300 V
25 A
400 V
15 A
450 V
3.5 A
200
300
400
500
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
I
C
= 1 mA
500
400
300
100
1 k
Base to emitter resistance R
BE
(
)
10 k
100 k
1 M
Collector to emitter voltage V
CER
(V)
Typical Output Characteristecs
T
C
= 25
C
I
B
= 0
0.1 A
1.0
0.8
0.6
0.2
0.4
10
8
6
4
2
0
1
2
Collector to emitter voltage V
CE
(V)
5
4
3
Collector current I
C
(A)
T
C
= 25
C
V
CE
= 5 V
10
8
6
4
2
0
0.4
0.8
Base to emitter voltage V
BE
(V)
1.2
1.6
2.0
Collector current I
C
(A)
Typical Transfer Characteristics
2SC3336
5
100
30
10
3
1
0.02
0.1
1.0
DC current transfer ratio h
FE
10
3
0.3
Collector current I
C
(A)
20
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
T
C
= 25
C
25
C
75
C
10
3
1.0
0.3
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1.0
3
10
Collector to Emitter Saturation
Voltage vs. Base Current
Base current I
B
(A)
Collector to emitter saturation voltage
V
CE(sat)
(V)
T
C
= 25
C
2 A
I
C
= 1 A
5 A
Saturation Voltage vs.
Collector Current
10
3
1.0
0.3
0.1
0.03
0.01
0.1
0.3
0.02
3
20
1.0
10
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
= 5 I
B
T
C
= 25
C
V
BE(sat)
V
CE(sat)
Switching Time vs. Collector Current
10
3
1.0
0.3
0.1
0.03
0.01
0.01
3
10
0.1
0.3
1.0
20
Switching time t (
s)
Collector current I
C
(A)
V
CC
= 150 V
I
C
= 5 I
B1
= 5 I
B2
t
stg
t
f
t
on
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