2SC3867
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
11
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
11
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
3
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 15 V, I
E
= 0
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.7
V
I
C
= 10 mA, I
B
= 5 mA
DC current transfer ratio
h
FE
45
--
200
V
CE
= 10 V, I
C
= 5 mA
Gain bandwidth product
f
T
2.5
3.8
--
GHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
Cob
--
0.8
1.5
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Conversion gain
CG
10
14
--
dB
V
CC
= 10 V, I
C
= 1 mA,
f = 900 MHz,
Noise figure
NF
--
10
14
dB
f
osc
= 930 MHz, (5dBm),
f
out
= 30 MHz
Note:
Marking is "DI"
2SC3867
3
150
100
50
Ambient Temperature Ta (
C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
5
20
2
10
50
1
Collector Current I
C
(mA)
200
160
120
80
40
0
DC Current Transfer Ratio vs.Collector Current
DC Current Transfer Ratio h
FE
V
CE
= 10 V
5
20
2
10
50
1
Collector Current I
C
(mA)
5
4
3
2
1
0
Gain Bandwidth Product vs.Collector Current
Gain Bandwidth Product f
T
(GHz)
V
CE
= 10 V
5
20
2
10
50
1
Collector to Base Voltage V
CB
(V)
2.0
1.6
1.2
0.4
0.8
0
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
f = 1 MHz
I
E
= 0
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