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Электронный компонент: 2SC4126

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2SC4126
Silicon NPN Epitaxial
Application
VHF and UHF wide band amplifier
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4126
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
11
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
A
V
CE
= 10 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
1
A
V
EB
= 1 V, I
C
= 0
DC current transfer ratio
h
FE
50
--
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
1.0
1.5
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
4.5
6.0
--
GHz
V
CE
= 5 V, I
C
= 20 mA
Power gain
PG
9.0
11.0
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.5
3.0
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "MI".
2SC4126
3
150
100
50
Ambient Temperature Ta (
C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
6
8
10
4
2
Collector to Emitter Voltage V
CE
(V)
0
20
16
12
8
4
Typical Output Characteristics
Collector Current I
C
(mA)
Pulse
150
125
100
75
50
I
B
= 25
A
1
2
20
5
10
50
Collector Current I
C
(mA)
200
160
120
80
40
0
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
V
CE
= 5 V
Pulse
1
2
10
5
20
50
Collector Current I
C
(mA)
10
8
6
4
2
0
Gain Bandwidth Product vs. Collector
Current
Gain Bandwidth Product f
T
(GHz)
V
CE
= 5 V
2SC4126
4
1
2
10
5
20
50
Collector to Base Voltage V
CB
(V)
2.0
1.6
1.2
0.8
0.4
0
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
I
E
= 0
f = 1 MHz
1
2
10
5
20
50
Collector Current I
C
(mA)
20
16
12
8
4
0
Power Gain PG (dB)
V
CE
= 5 V
f = 900 MHz
Power Gain vs. Collector Current
1
2
10
5
20
50
Collector Current I
C
(mA)
5
4
3
2
1
0
Noise Figure vs. Collector Current
Noise Figure NF (dB)
V
CE
= 5 V
f = 900 MHz
2SC4126
5
S Parameters (Emitter Common)
Test condition
V
CE
= 5 V, Z
O
= 50
,
Freq. = 100 to 1000 MHz (100 MHz Step)
2
1.5
3
4
5
10
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
0.2
0.2
0.6 0.8 1
2
3 4 5
10
0.4
0.6
0.8
1
0
1000 MHz
S11-Frequency
I
C
= 20 mA
I
C
= 5 mA
100 MHz
1.5
60
Scale : 10/div
30
0
30
60
90
120
150
150
120
90
180
1000 MHz
S21-Frequency
I
C
= 20 mA
I
C
= 5 mA
100 MHz
60
Scale : 0.4/div
30
0
30
60
90
120
150
150
120
90
180
1000 MHz
S12-Frequency
I
C
= 20 mA
I
C
= 5 mA
100 MHz
2
1.5
3
4
5
10
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
0.2
0.2
0.6
0.4
0.8 1
2
3 4 5
10
0.4
0.6
0.8
1
0
S22 -Frequency
1.5
1000 MHz
I
C
= 20 mA 100 MHz
I
C
= 5 mA
2SC4126
6
S Parameters (Emitter Common)
Test condition
V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
Freq.
(MHz)
11
S
S
11
(DEG.)
21
S
S
21
(DEG.)
12
S
S
12
(DEG.)
22
S
S
22
(DEG.)
Gmax*
1
(dB)
100
0.798
37.3
13.345
152.3
0.033
69.6
0.898
20.1
34.03
200
0.659
69.4
10.696
131.4
0.054
56.0
0.730
33.1
26.37
300
0.550
93.7
8.434
117.0
0.067
49.2
0.592
39.3
21.96
400
0.480
113.6
6.815
107.3
0.074
47.3
0.502
42.3
19.07
500
0.438
129.8
5.684
100.0
0.081
47.0
0.442
43.7
16.96
600
0.414
143.6
4.847
94.2
0.087
47.3
0.399
44.4
15.28
700
0.410
154.4
4.229
89.4
0.092
48.6
0.366
45.3
13.95
800
0.406
164.7
3.750
85.0
0.098
49.5
0.340
46.3
12.80
900
0.412
174.9
3.352
81.0
0.104
50.6
0.317
47.4
11.78
1000
0.424
178.1
3.071
77.4
0.110
51.6
0.299
48.3
11.01
Test condition
V
CE
= 5 V, I
C
= 20 mA, Z
O
= 50
Freq.
(MHz)
11
S
S
11
(DEG.)
21
S
S
21
(DEG.)
12
S
S
12
(DEG.)
22
S
S
22
(DEG.)
Gmax*
1
(dB)
100
0.501
75.1
26.789
131.8
0.024
62.2
0.683
36.5
32.54
200
0.402
117.1
16.600
111.1
0.035
58.5
0.446
45.4
26.13
300
0.368
141.0
11.543
100.7
0.044
61.3
0.337
45.6
22.40
400
0.347
157.6
8.823
94.7
0.054
63.3
0.282
44.2
19.83
500
0.354
169.0
7.131
89.5
0.063
65.0
0.250
42.8
17.92
600
0.358
178.7
5.979
85.8
0.074
66.6
0.228
42.1
16.36
700
0.370
174.9
5.158
82.3
0.084
66.9
0.208
42.1
15.08
800
0.380
167.1
4.536
79.2
0.094
67.3
0.192
42.7
13.98
900
0.400
161.5
4.042
76.5
0.104
67.6
0.178
43.2
13.03
1000
0.411
157.0
3.677
73.5
0.114
67.4
0.165
43.3
12.24
Note:
1. Gmax =
1
1 S
S
1
1 S
2
11
2
21
2
22
0.16
0 0.1
+ 0.1
0.06
0.95
0.85
1.8
0.2
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.95
0.95
1.9
0.2
2.95
0.2
0.4
+ 0.1
0.05
0.6
+ 0.1
0.05
2.8
+ 0.2 0.6
0.3
0.4
+ 0.1
0.05
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
--
Conforms
0.013 g
Unit: mm
0.4
+ 0.1
0.05
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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URL
NorthAmerica
: http:semiconductor.hitachi.com/
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: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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