2SC4367
Silicon NPN Epitaxial
Application
High Frequency amplifier
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SC4367
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
100
mA
Collector peak current
i
C (peak)
200
mA
Collector power dissipation
P
C
600
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
--
--
V
I
C
= 3 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
3
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 10 V, I
E
= 0
DC current transfer ratio
h
FE
40
--
--
V
CE
= 10 V, I
C
= 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 20 mA, I
B
= 4 mA
Gain bandwidth product
f
T
600
1000
--
MHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
Cob
--
1.3
--
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2SC4367
3
150
100
50
Ambient Temperature Ta (
C)
0
600
400
200
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
12
16
10
8
4
Collector to Emitter Voltage V
CE
(V)
0
30
24
18
12
6
Typical Output Characteristics
Collector Current I
C
(mA)
I
B
= 20
A
40
60
80
100
120
140
0.2
0.4
0.6
0.8
1.0
0
Base to Emitter Voltage V
BE
(V)
100
50
20
10
5
2
1
Typical Transfer Characteristics
Collector Current I
C
(mA)
V
CE
= 10 V
Pulse
Ta = 75
C
25
25
1
2
10
5
20
100
50
Collector Current I
C
(mA)
1,000
500
200
100
50
20
10
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
Ta = 75
C
25
25
V
CE
= 10 V
Pulse
2SC4367
4
1
20
50
10
100
5
2
Collector Current I
C
(mA)
10
1.0
0.1
0.01
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
I
C
= 10 I
B
Pulse
Ta = 25
C
25
75
1
2
10
5
20
100
50
Collector Current I
C
(mA)
10,000
1,000
100
Gain Bandwidth Product vs. Collector
Current
Gain Bandwidth Product f
T
(MHz)
V
CE
= 10 V
Pulse
1
2
10
50
5
20
100
Collector to Base Voltage V
CB
(V)
10
5
2
0.5
0.2
1.0
0.1
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
f = 1 MHz
I
E
= 0
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm
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