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Электронный компонент: 2SC4422

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2SC4422
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2SC4422
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
11
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
A
V
CE
= 10 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
1
A
V
EB
= 1 V, I
C
= 0
DC current transfer ratio
h
FE
50
--
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
1.2
1.6
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
4.5
6.0
--
GHz
V
CE
= 5 V, I
C
= 20 mA
Power gain
PG
7.0
9.0
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.6
3.0
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "CR".
2SC4422
3
Maximum Collector Dissipation Curve
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
400
600
200
0
50
100
150
Typical Output Characteristic
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
150
125
100
I
B
= 25
A
75
50
20
16
12
8
4
0
2
4
10
8
6
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
200
160
120
80
40
0
1
2
10
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
50
5
20
Gain Bandwidth Product vs.
Collector Current
V
CE
= 5 V
10
8
6
4
2
0
1
2
10
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
50
5
20
2SC4422
4
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
I
E
= 0
f = 1 MHz
2.0
1.6
1.2
0.8
0.4
0
1
2
10
50
5
20
Collector Current I
C
(mA)
Power Gain vs. Collector Current
Power Gain PG (dB)
V
CE
= 0
f = 900 MHz
20
16
12
8
4
0
1
2
10
50
5
20
Collector Current I
C
(mA)
Noise Figure vs. Collector Current
Noise Figure NF (dB)
V
CE
= 5 V
f = 900 MHz
5
4
3
2
1
0
1
2
10
50
5
20
2SC4422
5
S Parameters (Emitter Common)
Test Condition V
CE
= 5 V, 100 MHz to 1000 MHz (100 MHz Step), Z
O
= 50
I
C
= 5 mA
I
C
= 10 mA
S11-Frequency
1
1.5
2
3
4
5
10
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
0.2
0.4 0.6
1
1.5 2
3
5
10
4
0
0.2
0.4
0.6
0.8
S21-Frequency
90
60
30
0
30
60
90
120
150
180
150
120
Scale : 10/div
2SC4422
6
S12-Frequency
90
60
30
0
30
60
90
120
150
180
150
120
Scale : 0.1/div
S22-Frequency
1
1.5
2
3
4
5
10
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
0.2
0.4 0.6 0.81
1.5 2
3
5
10
4
0
0.2
0.4
0.6
0.8
2SC4422
7
S Parameters (Emitter Common)
Test Condition V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.747
42.0
12.471
143.1
0.044
69.5
0.840
24.6
200
0.534
70.3
8.958
119.9
0.071
62.3
0.640
36.3
300
0.394
91.0
6.624
106.1
0.090
61.2
0.522
40.4
400
0.310
105.3
5.194
96.8
0.108
62.5
0.456
42.4
500
0.258
117.0
4.280
89.7
0.126
64.1
0.417
43.7
600
0.216
126.9
3.636
84.0
0.145
65.1
0.391
45.4
700
0.193
139.0
3.170
79.0
0.165
65.9
0.376
47.5
800
0.167
149.6
2.824
74.5
0.185
66.5
0.368
50.0
900
0.157
162.3
2.543
70.2
0.206
66.9
0.363
53.1
1000
0.136
171.9
2.326
66.6
0.227
67.0
0.362
56.3
Test Condition V
CE
= 5 V, I
C
= 20 mA, Z
O
= 50
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.333
71.6
21.905
117.7
0.031
71.9
0.547
37.3
200
0.192
98.5
12.026
100.7
0.054
74.6
0.378
37.6
300
0.135
116.1
8.123
92.4
0.079
75.8
0.322
35.5
400
0.107
130.9
6.151
86.7
0.104
76.2
0.297
35.7
500
0.088
145.2
4.967
82.3
0.129
75.5
0.285
36.6
600
0.078
155.4
4.174
78.2
0.153
74.8
0.275
38.8
700
0.069
170.6
3.616
74.7
0.178
73.8
0.271
42.0
800
0.060
176.2
3.201
71.1
0.203
72.8
0.268
45.3
900
0.063
162.6
2.876
67.9
0.227
71.7
0.268
49.3
1000
0.051
147.4
2.624
65.0
0.251
70.5
0.271
53.5
2SC4422
8
Y Parameters (Emitter Common)
Test Condition V
CE
= 5 V, I
C
= 5 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
1.949
3.563
147.837
43.785
0.001
0.544
0.175
0.922
200
3.994
5.961
120.026
75.352
0.005
1.122
0.218
1.731
300
6.433
7.295
89.506
98.131
0.006
1.711
0.206
2.618
400
8.206
7.536
62.937
90.892
0.017
2.299
0.250
3.531
500
9.403
7.501
43.528
87.146
0.043
2.877
0.295
4.395
600
10.179
7.259
29.375
81.334
0.058
3.445
0.421
5.324
700
10.910
7.124
19.483
75.831
0.098
4.063
0.387
6.235
800
11.193
6.776
11.803
70.096
0.127
4.642
0.413
7.209
900
11.543
6.593
6.205
65.171
0.192
5.302
0.338
8.218
1000
11.387
6.328
2.208
60.095
0.249
5.855
0.401
9.171
Test Condition V
CE
= 5 V, I
C
= 20 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
5.863
2.308
276.917
268.988
0.000
0.522
0.244
0.751
200
7.022
2.660
109.913
221.759
0.005
1.121
0.309
1.637
300
7.375
2.861
50.698
167.756
0.006
1.713
0.305
2.507
400
7.527
3.094
26.179
133.425
0.024
2.302
0.363
3.373
500
7.607
3.429
14.053
110.501
0.025
2.885
0.394
4.282
600
7.562
3.893
7.198
94.442
0.056
3.477
0.463
5.156
700
7.537
4.211
2.859
82.874
0.079
4.077
0.478
6.093
800
7.383
4.635
0.221
73.836
0.124
4.674
0.506
7.046
900
7.403
5.047
2.127
67.183
0.180
5.312
0.444
8.018
1000
7.074
5.411
3.292
61.241
0.246
5.871
0.509
8.943
4.5
0.1
1.8 Max
1.5
0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5
0.1
4.25 Max
0.8 Min
1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
UPAK
--
Conforms
0.050 g
Unit: mm
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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5. This product is not designed to be radiation resistant.
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products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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