2SC4462
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
4
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
25
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 10 V, I
E
= 0
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 10 mA, I
B
= 1 mA
DC current transfer ratio
h
FE
30
--
--
V
CE
= 10 V, I
C
= 3 mA
Gain bandwidth product
f
T
700
1000
--
MHz
V
CE
= 10 V, I
C
= 5 mA
Collector output capacitance
Cob
--
--
0.8
pF
V
CB
= 10 V, I
C
= 5 mA,
f = 1 MHz
Conversion gain
CG
--
7.0
--
dB
V
CC
= 12 V, I
E
= 0,
f = 900 MHz
Noise figure
NF
--
10.0
--
dB
f
OSC
= 930 Mhz (0 dBm),
f
out
= 30 MHz
Note:
Marking is "EC".
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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