2SC4499(L)/(S)
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
4
12
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SC4499(L)/(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
0.5
A
Collector peak current
I
C(peak)
1.0
A
Collector power dissipation
P
C
0.75
W
P
C
*
1
10
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
--
--
V
I
C
= 0.1 A, R
BE
=
L = 100 mH
Emitter to base breakdown
voltage
V
(BR)EBO
10
--
--
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
20
A
V
CB
= 400 V, I
E
= 0
I
CEO
--
--
50
V
CE
= 350 V, R
BE
=
DC current transfer ratio
h
FE1
12
--
--
V
CE
= 5 V, I
C
= 0.25 A*
1
h
FE2
5
--
--
V
CE
= 5 V, I
C
= 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 0.25 A, I
B
= 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 0.25 A, I
B
= 0.05 A*
1
Turn on time
t
on
--
--
1.0
s
I
C
= 0.5 A, I
B1
= I
B2
= 0.1 A,
Storage time
t
stg
--
--
2.0
s
V
CC
150 V
Fall time
t
f
--
--
1.0
s
Note:
1. Pulse test.
2SC4499(L)/(S)
3
Maximum Collector Dissipation Curve
12
8
4
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
10
1.0
0.1
0.01
Collector current I
C
(A)
0.001
1
3
30
300
10
100
1,000
Collector to emitter voltage V
CE
(V)
DC Operation(T
C
= 25
C)
PW = 1 ms
250
s
50
s
Area of Safe Operation
25
s
Ta = 25
C, 1 Shot
Collector Current Derating Rate
Case temperature T
C
(
C)
IS/B Limit Area
100
80
60
40
20
0
50
100
150
Collector current derating rate (%)
Transient Thermal Resistance
10 ms10 s
10
s10 ms
10
3
1.0
0.3
0.1
0.03
0.01
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Time t
Thermal resistance
j-c
(
C/W)
T
C
= 25
C
2SC4499(L)/(S)
4
Reverse Bias Area of Safe Operation
1.0
0.8
0.6
0.4
0.2
0
100
I
B2
= 0.1 A
350 V, 1 A
400 V, 0.5 A
450 V, 0.1 A
200
300
400
500
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
I
C
= 1 mA
500
400
300
100
1 k
Base to emitter resistance R
BE
(
)
10 k
100 k
1 M
Collector to emitter voltage V
CER
(V)
Typical Output Characteristics
T
C
= 25
C
I
B
= 0
5 mA
10
20
30
40
50
0.5
0.4
0.3
0.2
0.1
0
1
2
Collector to emitter voltage V
CE
(V)
5
4
3
Collector current I
C
(A)
V
CE
= 5 V
Ta = 25
C
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
Base to emitter voltage V
BE
(V)
1.2
1.6
2.0
Collector current I
C
(A)
Typical Transfer Characteristics
2SC4499(L)/(S)
5
100
30
10
3
1
0.001
0.03
DC current transfer ratio h
FE
0.3
0.1
0.01
0.003
Collector current I
C
(A)
1.0
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
Ta = 25
C
10
3
1.0
0.3
0.1
0.03
0.01
0.001 0.003
0.01 0.03
0.1
0.3
1.0
Collector to Emitter Saturation
Voltage vs. Base Current
Base current I
B
(A)
Collector to emitter saturation voltage
V
CE(sat)
(V)
T
a
= 25
C
I
C
= 0.05 A
0.1 A
0.2 A
Saturation Voltage vs. Collector Current
10
3
1.0
0.3
0.1
0.03
0.01
0.003
0.001
0.01
0.1
1.0
0.03
0.3
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
T
a
= 25
C
V
BE(sat)
V
CE(sat)
I
C
= 5 I
B
Switching Time vs. Collector Current
10
3
1.0
0.3
0.1
0.03
0.01
0.001
0.03
0.3
1.0
0.003
0.01
0.1
Switching time t (
s)
Collector current I
C
(A)
V
CC
= 150 V
I
C
= 5 I
B1
= 5 I
B2
t
stg
t
on
t
f
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