2SC454
Silicon NPN Epitaxial
Application
High frequency amplifier, mixer
Outline
1. Emitter
2. Collector
3. Base
TO-92 (2)
3
2
1
2SC454
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 18 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.5
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
100
--
500
V
CE
= 12 V, I
C
= 2 mA
Base to emitter voltage
V
BE
--
0.63
0.75
V
V
CE
= 12 V, I
C
= 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.2
V
I
C
= 10 mA, I
B
= 1 mA
Gain bandwidth product
f
T
--
230
--
MHz
V
CE
= 12 V, I
C
= 2 mA
Collector output capacitance
Cob
--
--
3.5
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Noise figure
NF
--
--
25
dB
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 500
IF power gain
IFG
--
35
--
dB
V
CE
= 12 V, I
C
= 1 mA,
f = 455 kHz, Rg
= 1.5 k
,
R
L
= 40 k
Note:
1. The 2SC454 is grouped by h
FE
as follows.
B
C
D
100 to 200
160 to 320
250 to 500
2SC454
3
Small Signal y Parameters (V
CE
= 12 V, I
C
= 2mA, Emitter Common)
Item
Symbol
f
2SC454B
2SC454C
Unit
Input admittance
yie
455 kHz
0.35 + j0.074
0.28 + j0.070
mS
1MHz
0.35 + j0.130
0.28 + j0.125
Reverse transfer admittance
yre
455 kHz
j0.005
j0.005
mS
1MHz
j0.013
j0.013
Forward transfer admittance
yfe
455 kHz
66 j2.43
64 j2.60
mS
1MHz
66 j4.27
66 j5.7
Output admittance
yoe
455 kHz
0.006 + j0.02
0.007 + j0.022
mS
1MHz
0.006 + j0.047
0.007 + j0.049
0
50
100
150
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
50
100
150
200
250
Typical Output Characteristics (1)
Collector to Emitter Voltage V
CE
(V)
Collector current I
C
(mA)
0
4
8
12
16
20
20
16
12
8
4
100
80
60
40
20
A
I
B
= 0
P
C
= 200 mW
2SC454
4
Typical Output Characteristics (2)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
0
4
8
12
16
20
5
4
3
2
1
5
A
I
B
= 0
30
25
20
15
10
Typical Transfer Characteristics (1)
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
0
0.2
0.4
0.6
0.8
1.0
5
4
3
2
1
V
CE
= 12 V
Typical Transfer Characteristics (2)
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
0
0.2
0.4
0.6
0.8
1.0
20
16
12
8
4
V
CE
= 12 V
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
0.1
0.5
0.2
1.0
2
5
10
20
50
0
60
120
180
240
300
DC Current Transfer Ratio h
FE
V
CE
= 12 V
2SC454
5
Gain Band width Product vs.
Collector Current
Collector Current I
C
(mA)
0.1
0.3
1.0
3
10
30
0
100
200
300
400
500
Gain Bandwidth Product f
T
(MHz)
V
CE
= 12 V
Input/Output Admittance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
1
2
5
10
20
50
10
20
50
100
200
500
Percentage of Relative to V
CE
= 12 V (%)
I
C
= 2 mA
f = 455 kHz, 1 MHz
g
oe
g
oe
b
oe
b
ie
b
ie
g
ie
g
ie
b
oe
Input/Output Admittance vs.
Collector Current
Collector Current I
C
(mA)
0.1
0.2
0.5
1.0
2
10
5
10
20
50
100
200
1,000
500
Percentage of Relative to I
C
= 2 mA (%)
V
CE
= 12 V
f = 455 kHz, 1 MHz
g
oe
g
oe
b
oe
b
ie
g
ie
b
oe
b
ie
g
ie
Transfer Admittance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
1
2
5
10
20
50
10
20
50
100
200
500
Percentage of Relative to V
CE
= 12 V (%)
I
C
= 2 mA
f = 455 kHz, 1 MHz
b
fe
g
fe
b
fe
b
re
b
re
g
fe
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