2SC458(K)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Medium speed switching
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SC458 (K)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 18 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
1.0
A
V
EB
= 4 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
100
--
500
V
CE
= 1 V, I
C
= 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.4
V
I
C
= 10 mA, I
B
= 1 mA
Base to emitter voltage
V
BE(sat)
--
--
1.0
V
I
C
= 10 mA, I
B
= 1 mA
Gain bandwidth product
f
T
100
--
--
MHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
Cob
--
--
4
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Turn on time
t
on
--
80
--
ns
I
C
= 10 I
B1
= 10 I
B2
= 10 mA,
V
CC
= 10 V
Turn off time
t
off
--
300
--
ns
Storage time
t
stg
--
260
--
ns
I
C
= I
B1
= I
B2
= 20 mA,
V
CC
= 5 V
Note:
1. The 2SC458 (K) is grouped by h
FE
as follows.
B
C
D
100 to 200
160 to 320
250 to 500
2SC458 (K)
3
Small Signal h Parameters
Item
Symbol
Typ
Unit
Test conditions
Input impedance
h
ie
16.5
k
V
CE
= 5 V, I
C
= 0.1 mA,
f = 270 Hz
Voltage feedback ratio
h
re
70
10
6
Current transfer ratio
h
fe
130
Output admittance
h
oe
11
S
+
+
Switching Time Test Circuit
t
on
, t
off
Test Circuit
D.U.T
CRT
50
6 V
6 k
6 k
1 k
10 V
50
50
0.005
0.005
Unit
P.G.
tr, tf 20 ns
PW 2
s
R:
C:F
<
=
>
=
+
+
Switching Time Test Circuit
t
stg
Test Circuit
D.U.T
CRT
200
7 V
100
0.5
220
240
5 V
50
50
0.002
0.002
Unit
P.G.
tr 10 ns
PW 1
s
R:
C:F
<
=
>
=
Response Waveform
13 V
0
90%
10%
t
on
t
off
Input
Output
I
C
I
B1
I
B2
V
CC
V
BB
V
in
10 mA
1 mA
1 mA
10 V
6 V
13 V
Response Waveform
9 V
0
Input
Output
10%
10%
t
stg
I
C
I
B1
I
B2
V
CC
V
BB
V
in
20 mA 20 mA 20 mA
5 V
7 V
9 V
2SC458 (K)
4
Maximum Collector Dissipation Curve
250
200
150
100
50
0
50
150
100
Ambient Tmperature Ta (
C)
Collector power dissipation P
C
(mW)
Collector Cutoff Current vs.
Collector to Base Voltage
100
125
100
75
50
Ta = 25
C
30
10
3
1.0
0.3
0.1
0.03
0
10
20
30
5
15
Collector to Base Voltage V
CB
(V)
Collector cutoff current I
CBO
(nA)
25
Typical Output Characteristics (1)
I
B
= 0
100
80
60
40
20
0
0.4
1.2
2.0
0.8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
1.6
0.1 mA
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Typical Output Characteristics (2)
14
12
10
8
6
4
1
A
2
I
B
= 0
2.0
1.8
1.2
0.8
0.4
0
20
60
100
40
80
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
2SC458 (K)
5
Collector to Emitter Saturation
Voltage vs. Base Current
1.0
0.8
0.6
0.4
0.2
0
0.02
0.1
0.5
2
10
0.05
0.2
Base Current I
B
(mA)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
1.0
20
5
I
C
= 5 mA
10
20
50
100
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
V
CE
= 1 V
240
200
160
120
80
40
0
0.5
5
20
100
2
10
50
1.0
Ta = 100
C
75
50
25
0
25
50
Base to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage V
BE (sat)
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
1
10
5
20
50
2
I
C
= 10 I
B
Ta = 75
C
25
25
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
Ta = 25
C
50
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
1
5
20
100
10
50
2
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