2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SA1031 and 2SA1032
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SC458 (LG), 2SC2310
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SC458 (LG)
2SC2310
Unit
Collector to base voltage
V
CBO
30
55
V
Collector to emitter voltage
V
CEO
30
50
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
100
100
mA
Emitter current
I
E
100
100
mA
Collector power dissipation
P
C
200
200
mW
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
2SC458 (LG), 2SC2310
3
Electrical Characteristics (Ta = 25C)
2SC458 (LG)
2SC2310
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
--
--
55
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
--
--
50
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
--
--
0.5
A
V
CB
=18 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.5
--
--
0.5
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
100
--
500
100
--
320
V
CE
= 12 V, I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
0.2
--
--
0.2
V
I
C
= 10 mA, I
B
= 1 mA
Base to emitter voltage
V
BE
--
0.67
0.75
--
0.67
0.75
V
V
CE
= 12 V, I
C
= 2 mA
Gain bandwidth product f
T
--
230
--
--
230
--
MHz
V
CE
= 12 V, I
C
= 2 mA
Collector output
capacitance
Cob
--
1.8
3.5
--
1.8
3.5
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise figure
NF
--
3
5
--
3
5
dB
V
CE
= 6 V, I
C
= 0.1 mA,
f = 120 Hz, R
g
= 500
Small signal input
impedance
h
ie
--
16.5
--
--
16.5
--
k
V
CE
= 5V, I
C
= 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
--
70
--
--
70
--
10
6
Small signal current
transfer ratio
h
fe
--
130
--
--
130
--
Small signal output
admittance
h
oe
--
11.0
--
--
11.0
--
S
Note:
1. The 2SC458 (LG) and 2SC2310 are grouped by h
FE
as follows.
B
C
D
2SC458 (LG) 100 to 200
160 to 320
250 to 500
2SC2310
100 to 200
160 to 320
--
2SC458 (LG), 2SC2310
4
0
50
100
150
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
300
200
100
Collector to Emitter Voltage V
CE
(V)
0
Collector Current I
C
(mA)
Typical Output Characteristics
10
8
6
4
2
25
20
15
10
5
I
B
= 0
10
A
20
30
40
50
60
P
C
= 200mW
Typical Transfer Characteristics
Collector Current I
C
(mA)
1
0
2
3
4
5
Base to Emitter Voltage V
BE
(V)
1.0
0.8
0.6
0.4
0.2
V
CE
= 12 V
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
0.03
0.1
30
0.3
3
1.0
10
0
100
200
300
DC Current Transfer Ratio
h
FE
V
CE
= 12 V
25
Ta = 75
C
2SC458 (LG), 2SC2310
5
Small Signal Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
Small Signal Current Transfer Ratio h
fe
0.03
0.1
30
0.3
3
1.0
10
0
100
200
300
f = 270 Hz
V
CE
= 12 V
Base to Emitter Voltage vs.
Ambient Temperature
Ambient Temperature Ta (
C)
20
0
80
20
60
40
0.4
0.5
0.6
0.8
0.7
0.9
Base to Emitter Voltage V
BE
(V)
V
CE
= 12 V
I
C
= 2 mA
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
4
20
8
16
12
0
1
2
4
3
5
Collector Output Capacitance C
ob
(pF)
I
E
= 0
f = 1 MHz
Emitter Input Capacitance vs.
Emitter to Base Voltage
Emitter to Base Voltage V
EB
(V)
2
10
4
8
6
0
1
2
4
3
5
Emitter Input Capacitance C
ib
(pF)
I
C
= 0
f = 1 MHz
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