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Электронный компонент: 2SC4592

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2SC4592
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4592
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 9 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
40
120
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
0.8
1.5
pF
V
CB
= 5 V, I
E
= 0,
f = 1MHz
Gain bandwidth product
f
T
7.0
9.5
--
GHz
V
CE
= 5 V, I
C
= 20 mA
Power gain
PG
11.0
14.0
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.2
2.5
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "XN".
2SC4592
3
150
100
50
Ambient Temperature Ta (
C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
0
40
80
200
160
120
1
2
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio
vs. Collector Current
10
5
50
20
V
CE
= 5 V
0
2.5
5.0
12.5
10.0
7.5
1
2
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product
vs. Collector Current
10
5
50
20
V
CE
= 5 V
0.6
0.7
0.8
1.1
1.0
0.9
1
2
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance
vs. Collector to Base Voltage
10
5
50
20
I
E
= 0
f = 1 MHz
2SC4592
4
0
4
8
20
16
12
1
2
Collector Current I
C
(mA)
Power Gain PG (dB)
Power Gain vs. Collector Current
10
5
50
20
V
CE
= 5 V
f = 900 MHz
0
1
2
5
4
3
1
2
Collector Current I
C
(mA)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
10
5
50
20
V
CE
= 5 V
f = 900 MHz
2SC4592
5
S11-Parameter vs. Frequency
0
0.2
0.4
0.6
0.8
1
1.5
2
3
4
5
10
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
0.2
0.6 0.8 1
2
3
5
1.5
4
10
Condition : V
CE
= 5 V, I
C
= 5, 20 mA, Z
O
= 50
200 to 2000 MHz (200 MHz Step)
(I
C
= 5 mA)
(I
C
= 20 mA)
S12-Parameter vs. Frequency
150
30
120
60
90
90
180
0
150
30
120
60
Scale : 0.05/div.
Condition : V
CE
= 5 V, I
C
= 5, 20 mA, Z
O
= 50
200 to 2000 MHz (200 MHz Step)
(I
C
= 5 mA)
(I
C
= 20 mA)
2SC4592
6
S21-Parameter vs. Frequency
150
30
120
60
90
90
180
0
150
30
120
60
Scale : 5/div.
Condition : V
CE
= 5 V, I
C
= 5, 20 mA, Z
O
= 50
200 to 2000 MHz (200 MHz Step)
(I
C
= 5 mA)
(I
C
= 20 mA)
0
0.2
0.4
0.6
0.8 0.1
1.5
2
3
4
5
10
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
0.2
0.4 0.6 0.8 1
2
3
5
1.5
4
10
Condition : V
CE
= 5 V, I
C
= 5, 20 mA, Z
O
= 50
200 to 2000 MHz (200 MHz Step)
(I
C
= 5 mA)
(I
C
= 20 mA)
S22-Parameter vs. Frequency
2SC4592
7
S Parameter (V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.893
28.8
12.428
159.3
0.034
74.2
0.939
17.2
200
0.788
54.8
10.823
141.1
0.058
61.4
0.819
31.5
300
0.693
76.3
9.118
127.1
0.076
52.8
0.699
41.8
400
0.603
94.1
7.714
116.9
0.087
47.9
0.602
48.5
500
0.542
110.1
6.565
108.8
0.094
45.3
0.531
52.8
600
0.507
122.6
5.693
102.5
0.100
44.0
0.478
55.9
700
0.472
133.8
5.002
96.9
0.105
43.2
0.437
58.5
800
0.454
144.1
4.477
92.3
0.110
42.8
0.405
60.8
900
0.443
152.1
4.001
88.2
0.115
43.3
0.382
62.5
1000
0.436
160.1
3.660
84.2
0.119
44.1
0.363
64.3
1100
0.423
167.8
3.372
80.9
0.124
44.6
0.350
65.9
1200
0.420
174.8
3.100
77.7
0.129
45.5
0.340
66.8
1300
0.419
178.6
2.882
74.7
0.134
46.4
0.336
68.2
1400
0.420
172.4
2.703
71.8
0.139
46.9
0.328
69.9
1500
0.419
166.2
2.542
69.3
0.144
47.9
0.323
71.3
1600
0.423
161.8
2.392
66.3
0.150
48.5
0.320
72.0
1700
0.422
156.4
2.270
63.9
0.155
49.0
0.317
74.2
1800
0.433
151.3
2.149
61.6
0.161
49.5
0.316
76.0
1900
0.432
147.3
2.050
59.5
0.167
50.1
0.315
77.4
2000
0.442
142.5
1.958
56.9
0.174
50.6
0.315
79.0
2SC4592
8
S Parameter (V
CE
= 5 V, I
C
= 20 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.619
64.2
31.361
137.5
0.025
63.5
0.729
39.2
200
0.475
104.2
20.515
116.0
0.036
56.8
0.483
57.2
300
0.417
128.3
14.505
105.1
0.045
57.8
0.356
65.2
400
0.385
145.2
11.189
98.3
0.054
60.1
0.287
69.2
500
0.374
157.4
9.053
93.4
0.063
61.6
0.245
71.9
600
0.367
166.9
7.608
89.6
0.072
62.8
0.220
73.8
700
0.367
175.4
6.547
86.1
0.081
64.1
0.201
75.5
800
0.366
177.2
5.773
83.0
0.090
64.7
0.189
77.2
900
0.369
172.0
5.121
80.6
0.100
64.9
0.181
78.4
1000
0.368
166.2
4.632
77.9
0.109
65.1
0.175
80.1
1100
0.369
160.6
4.238
75.3
0.119
65.3
0.171
81.2
1200
0.373
155.7
3.897
73.2
0.128
65.1
0.168
82.7
1300
0.377
151.2
3.616
71.0
0.137
65.1
0.167
84.2
1400
0.382
146.9
3.369
68.8
0.147
64.5
0.167
85.7
1500
0.384
142.1
3.154
66.8
0.156
64.1
0.168
87.1
1600
0.386
138.7
2.960
64.5
0.166
63.5
0.168
88.3
1700
0.391
133.7
2.803
62.9
0.175
63.0
0.169
89.9
1800
0.401
130.6
2.662
60.6
0.185
62.4
0.171
91.5
1900
0.405
127.4
2.533
59.1
0.193
61.7
0.172
92.6
2000
0.408
12.8
2.416
57.0
0.202
61.1
0.175
94.1
0.16
0 0.1
+ 0.1
0.06
0.95
0.85
1.8
0.2
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.95
0.95
1.9
0.2
2.95
0.2
0.4
+ 0.1
0.05
0.6
+ 0.1
0.05
2.8
+ 0.2 0.6
0.3
0.4
+ 0.1
0.05
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
--
Conforms
0.013 g
Unit: mm
0.4
+ 0.1
0.05
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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