2SC4926
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 11 GHz Typ
High gain, low noise figure
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4926
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 8 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
0.6
1.1
pF
V
CB
= 5 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product
f
T
8.0
11.0
--
GHz
V
CE
= 5 V, I
C
= 20 mA
S
21
Parameter
21
S
--
16
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 1000 MHz
Power gain
PG
13.5
16.5
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.1
2.0
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "YD".
Attention: This is electrostatic sensitive device.
2SC4926
3
150
100
50
Ambient Temperature Ta (
C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
200
160
120
80
40
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
1
2
5
10
20
50
V = 5V
CE
0
DC Current Transfer Ratio
vs. Collector Current
12
10
8
6
4
2
1
2
5
10
20
50
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
V = 5 V
CE
0
Gain Bandwidth Product
vs. Collector Current
0.9
0.8
0.7
0.6
0.5
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
I = 0
f = 1 MHz
E
0.4
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4926
4
20
16
12
8
4
1
2
5
10
20
Collector Current I (mA)
50
Power Gain PG (dB)
C
V = 5V
f = 900 MHz
CE
0
Power Gain vs. Collector Current
5
4
3
2
1
1
2
5
10
20
Collector Current I (mA)
50
Noise Figure NF (dB)
C
0
V = 5V
f = 900MHz
CE
Noise Figure vs. Collector Current
20
16
12
8
4
1
2
5
10
20
Collector Current I (mA)
50
S Parameter |S | (dB)
C
V = 5V
f = 1 GHz
CE
0
21
21
S21 Parameter vs. Collector Current
2SC4926
5
.2
.4
.6
1.0 1.5 2
4
3
5
1
1.5
2
3
4
5
10
10
5
4
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
10
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S11 Parameter vs. Frequency
90
60
120
30
0
30
60
90
120
150
180
150
Scale: 5 / div.
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S21 Parameter vs. Frequency
90
60
30
0
30
60
90
120
150
180
150
120
Scale: 0.04 / div.
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S12 Parameter vs. Frequency
.2
.4
.6 .8 1.0 1.5 2
3 4 5
10
5
4
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
2
3
4
5
10
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
10
S22 Parameter vs. Frequency
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